Number | Date | Country | Kind |
---|---|---|---|
195 34 780 | Sep 1995 | DEX |
This is a continuation of copending international application PCT/DE96/01697, filed Sep. 10, 1996, which designated the United States.
Number | Name | Date | Kind |
---|---|---|---|
4513397 | Ipri et al. | Apr 1985 | |
4558339 | Angle | Dec 1985 | |
5100818 | Arima et al. | Mar 1992 | |
5225362 | Bergemont | Jul 1993 | |
5310693 | Hsue | May 1994 | |
5612237 | Ahn | Mar 1997 | |
5750428 | Chang | May 1998 | |
5773343 | Lee et al. | Jun 1998 | |
5817557 | Baldi | Oct 1998 | |
5837583 | Chuang et al. | Nov 1998 | |
5854501 | Kao | Dec 1998 |
Number | Date | Country |
---|---|---|
0 197 284 A2 | Oct 1986 | EPX |
5-190809 | Jul 1993 | JPX |
Entry |
---|
"Double Trans Isolation (DTI): A Novel Isolation Technology for Deep-Submicron Silicon Devices" (Park et al.), Advanced Technology Center, Samsung Electronics Co. LTD, Korea, pp. 137-138. |
"Low-power EE-PROM can be reprogrammed fast" Technical Articles, Electronics, Jul. 31, 1980, pp. 89-92. |
"Deep Dielectric Isolationi" (S.D. Malaviya), Technical Disclosure Bulletin, vol. 26, No. 7A, Dec. 1983, pp. 3188-3189. |
"Submicron-gate self-aligned gallium arsenide fet fabrication", IBM Technical Disclosure Bulletin, vol. 28, No. 6, Nov. 1985. |
Number | Date | Country | |
---|---|---|---|
Parent | PCTDE9601697 | Sep 1996 |