METHOD FOR PRODUCING WIRING CIRCUIT BOARD AND WIRING CIRCUIT BOARD

Abstract

A method for producing a wiring circuit board includes a step of preparing a substrate; a step of forming a first insulating layer on one side of the substrate in a thickness direction; a step of forming a conductive pattern on one side of the first insulating layer in the thickness direction; a step of etching the substrate to form a first metal support layer on the other side of the first insulating layer in the thickness direction; and a step of depositing a metal on the other side of the first metal support layer in the thickness direction to form a second metal support layer. The second metal support layer has a terminal support portion supporting two terminals of the conductive pattern, a wiring support portion supporting a wiring of the conductive pattern, and a second wiring support portion supporting a second wiring of the conductive pattern.

Description

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority from Japanese Patent Application No. 2022-152345 filed on Sep. 26, 2022, the contents of which are hereby incorporated by reference into this application.

TECHNICAL FIELD

The present invention relates to a method for producing a wiring circuit board and a wiring circuit board.

BACKGROUND ART

Conventionally, in a wiring circuit board including a metal-based support layer which functions as a heat sink, it has been proposed to improve heat dissipation by providing a first connecting body, a second connecting body disposed away from the first connecting body, and a plurality of wiring bodies disposed between the first connecting body and the second connecting body and disposed spaced from each other (ref: for example, Patent Document 1 below).

CITATION LIST

Patent Document

• • Patent Document 1: Japanese Unexamined Patent Publication No. 2019-212656

SUMMARY OF THE INVENTION

Problem to be Solved by the Invention

In the wiring circuit board described in the above-described Patent Document 1, a further fine pitch of the wiring body is desired.

The present invention provides a method for producing a wiring circuit board which is capable of achieving a fine pitch of a wiring support portion, and a wiring circuit board.

Means for Solving the Problem

The present invention [1] includes a method for producing a wiring circuit board including a preparation step of preparing a substrate; a first patterning step of forming an insulating layer on one side of the substrate in a thickness direction; a second patterning step of forming a conductive pattern on one side of the insulating layer in the thickness direction, the conductive pattern having a first terminal, a second terminal, a first wiring connected to the first terminal, and a second wiring connected to the second terminal and disposed spaced from the first wiring; an etching step of etching the substrate to form the first metal support layer on the other side of the insulating layer in the thickness direction; and after the etching step, a deposition step of depositing a metal on the other side of the first metal support layer in the thickness direction to form a second metal support layer having a terminal support portion supporting the first terminal and the second terminal, a first wiring support portion supporting the first wiring, and a second wiring support portion supporting the second wiring and disposed spaced from the first wiring support portion.

According to such a method, by depositing the metal, the second metal support layer is patterned into a predetermined shape (shape having the terminal support portion, the first wiring support portion, and the second wiring support portion).

Therefore, as compared with a case of patterning the second metal support layer by removing the metal by a method such as etching, it is possible to stably obtain the second metal support layer in a desired shape without excessively removing the metal.

As a result, it is possible to achieve a fine pitch of the wiring support portion.

The present invention [2] includes the method for producing a wiring circuit board of the above-described [1] further including a bonding layer forming step of forming a bonding layer made of a metal on the other surface of the first metal support layer in the thickness direction before the deposition step, wherein in the deposition step, the second metal support layer is formed on the bonding layer.

According to such a method, it is possible to ensure bondability between the first metal support layer and the second metal support layer.

The present invention [3] includes a wiring circuit board including an insulating layer; a conductive pattern disposed on one side of the insulating layer in a thickness direction and having a first terminal, a second terminal, a first wiring connected to the first terminal, and a second wiring connected to the second terminal and disposed spaced from the first wiring; a first metal support layer disposed on the other side of the insulating layer in the thickness direction; and a second metal support layer disposed on the other side of the first metal support layer in the thickness direction and having a terminal support portion supporting the first terminal and the second terminal, a first wiring support portion supporting the first wiring, and a second wiring support portion supporting the second wiring and disposed spaced from the first wring support portion, wherein a width of the first wiring support portion is wider than the width of the first metal support layer disposed between the first wiring support portion and the insulating layer.

According to such a configuration, it is possible to form the thick metal support layer consisting of the first metal support layer and the second metal support layer on the other side of the insulating layer in the thickness direction.

Thus, it is possible to ensure heat dissipation of the wiring circuit board.

Furthermore, since the wiring circuit board of such a configuration can be produced using the above-described production method, it is also possible to achieve the fine pitch of the wiring support portion.

The present invention [4] includes the wiring circuit board of the above-described [3], wherein the first wiring support portion covers a side surface of the first metal support layer disposed between the first wiring support portion and the insulating layer.

According to such a configuration, it is possible to make the first metal support layer function as an anchor of the first wiring support portion.

Thus, it is possible to stably support the wiring support portion by the first metal support layer.

The present invention [5] includes the wiring circuit board of the above-described [3] further having a bonding layer disposed between the first metal support layer and the second metal support layer.

According to such a configuration, it is possible to ensure the bondability between the first metal support layer and the second metal support layer.

Effect of the Invention

According to a method for producing a wiring circuit board and a wiring circuit board of the present invention, it is possible to achieve a fine pitch of a wiring support portion.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a plan view of a wiring circuit board as one embodiment of the present invention.

FIG. 2A shows an A-A cross-sectional view of the wiring circuit board shown in FIG. 1.

FIG. 2B shows a B-B cross-sectional view of the wiring circuit board shown in FIG. 1.

FIG. 3 shows a reverse-side view of the wiring circuit board shown in FIG. 1.

FIGS. 4A to 4D show process views for illustrating a method for producing a wiring circuit board:

FIG. 4A illustrating a preparation step,

FIG. 4B illustrating a first pattern step,

FIG. 4C illustrating a second pattern step, and

FIG. 4D illustrating a third pattern step.

FIGS. 5A to 5C show process views for illustrating the method for producing a wiring circuit board subsequent to FIG. 4D:

FIG. 5A illustrating an etching step,

FIG. 5B illustrating a bonding layer forming step, and

FIG. 5C illustrating a deposition step.

FIG. 6 shows an explanatory view for illustrating an arrangement of an etching resist in the etching step shown in FIG. 5A.

DESCRIPTION OF EMBODIMENTS

1. Wiring Circuit Board

A wiring circuit board 1 is described with reference to FIGS. 1 to 3.

As shown in FIG. 1, the wiring circuit board 1 has two terminal arrangement portions 2A and 2B, and a plurality of connecting portions 3A, 3B, and 3C. The terminal arrangement portions 2A and 2B are disposed spaced from each other in a first direction. The first direction is perpendicular to a thickness direction of the wiring circuit board 1. Each of the terminal arrangement portions 2A and 2B extends in a second direction. The second direction is perpendicular to both the first direction and the thickness direction. In the terminal arrangement portion 2A, terminals 151A, 151B, and 151C of a conductive pattern 15 to be described later are disposed. In the terminal arrangement portion 2B, terminals 152A, 152B, and 152C of the conductive pattern 15 to be described later are disposed.

The connecting portions 3A, 3B, and 3C connect the terminal arrangement portion 2A to the terminal arrangement portion 2B. The connecting portions 3A, 3B, and 3C are disposed between the terminal arrangement portion 2A and the terminal arrangement portion 2B in the first direction. In the present embodiment, each of the connecting portions 3A, 3B, and 3C extends in the first direction. One end portion of each of the connecting portions 3A, 3B, and 3C in the first direction is connected to the terminal arrangement portion 2A. The other end portion of each of the connecting portions 3A, 3B, and 3C in the first direction is connected to the terminal arrangement portion 2B. A shape of each of the connecting portions 3A, 3B, and 3C is not limited. Each of the connecting portions 3A, 3B, and 3C may be a linear shape or a curved shape. The connecting portions 3A, 3B, and 3C are disposed spaced from each other in the second direction. In other words, the connecting portions 3A, 3B, and 3C are disposed spaced from each other in a direction perpendicular to a direction in which the connecting portion 3A extends. In the connecting portion 3A, a wiring 153A of the conductive pattern 15 to be described later is disposed. In the connecting portion 3B, a wiring 153B of the conductive pattern 15 to be described later is disposed. In the connecting portion 3C, a wiring 153C of the conductive pattern 15 to be described later is disposed.

A width W0 of each of the connecting portions 3A, 3B, and 3C is, for example, 300 μm or less, preferably 250 μm or less. The width W0 is, for example, 10 μm or more, preferably 50 μm or more.

The “width” refers to the maximum length in a direction perpendicular to both a direction in which the connecting portion extends and the thickness direction. For example, the “width” of the connecting portion 3A refers to the maximum length in a direction perpendicular to both a direction in which the connecting portion 3A extends and the thickness direction. In the present embodiment, the “width” refers to the maximum length in the second direction.

An interval D1 of each of the connecting portions 3A, 3B, and 3C is, for example, 300 μm or less, preferably 250 μm or less. The interval D1 is, for example, 5 μm or more, preferably 10 μm or more.

As shown in FIGS. 2A and 2B, the wiring circuit board 1 includes a first metal support layer 11, a second metal support layer 12, a bonding layer 13, a first insulating layer 14 as one example of the insulating layer, the conductive pattern 15, and a second insulating layer 16.

(1) First Metal Support Layer

As shown in FIGS. 2A and 2B, the first metal support layer 11 is disposed on the other side of the first insulating layer 14 in the thickness direction. The first metal support layer 11 is disposed on the other surface of the first insulating layer 14 in the thickness direction. The first metal support layer 11 is disposed between the second metal support layer 12 and the first insulating layer 14 in the thickness direction. In each of the connecting portions 3A, 3B, and 3C, the width of one surface of the first metal support portion 11 in the thickness direction is wider than the width of the other surface of the first metal support portion 11 in the thickness direction. The width of the first metal support portion 11 of each of the connecting portions 3A, 3B, and 3C becomes narrower toward the other side in the thickness direction. In other words, the first metal support portion 11 of each of the connecting portions 3A, 3B, and 3C has a tapered shape. The first metal support layer 11 is made of a metal. Examples of a material for the first metal support layer 11 include copper, copper alloys, stainless steel, nickel, titanium, and 42-alloy. As the material for the first metal support layer 11, preferably, a copper alloy is used.

A thickness T1 of the first metal support layer 11 is, for example, 1 μm or more, preferably 5 μm or more, and for example, 30 μm or less, preferably 20 μm or less.

A width W1 of the first metal support layer 11 of each of the connecting portions 3A, 3B, and 3C is the width W0 of each of the connecting portions 3A, 3B, and 3C or less (ref: FIG. 1). The width W1 of the first metal support layer 11 of each of the connecting portions 3A, 3B, and 3C is, for example, 100 μm or less, preferably 50 μm or less.

The width W1 of the first metal support layer 11 of each of the connecting portions 3A, 3B, and 3C is, for example, 5 μm or more, preferably 10 μm or more.

(2) Second Metal Support Layer

The second metal support layer 12, together with the first metal support layer 11, supports the first insulating layer 14, the conductive pattern 15, and the second insulating layer 16. The second metal support layer 12 is disposed on the other side of the first insulating layer 14 and the first metal support layer 11 in the thickness direction. The second metal support layer 12 is made of the metal. Examples of the material for the second metal support layer 12 include copper, nickel, cobalt, iron, and alloys of these. Examples of the alloy include copper alloys. The material for the second metal support layer 12 may be the same as or different from the material for the first metal support layer 11. As the material for the second metal support layer 12, preferably, a copper alloy is used.

A thickness T2 of the second metal support layer 12 is, for example, 10 μm or more, preferably 50 μm or more, and for example, 300 μm or less, preferably 250 μm or less. The second metal support layer 12 is preferably thicker than the first metal support layer 11.

A ratio (T2/T1) of the thickness T2 of the second metal support layer 12 to the thickness T1 of the first metal support layer 11 is, for example, 1.5 or more, preferably 2 or more, more preferably 4 or more, and for example, 20 or less, preferably 10 or less.

As shown in FIG. 3, the second metal support layer 12 has two terminal support portions 121A and 121B and a plurality of wiring support portions 122A, 122B, and 122C.

The terminal support portion 121A is the second metal support layer 12 of the terminal arrangement portion 2A (ref: FIG. 1). The terminal support portion 121A supports at least the terminals 151A, 151B, and 151C of the conductive pattern 15. The terminal support portion 121A may support a portion of each of the wirings 153A, 153B, and 153C of the conductive pattern 15.

The terminal support portion 121B is the second metal support layer 12 of the terminal arrangement portion 2B (ref: FIG. 1). The terminal support portion 121B is disposed spaced from the terminal support portion 121A in the first direction. The terminal support portion 121B supports at least the terminals 152A, 152B, and 152C of the conductive pattern 15. The terminal support portion 121B may support a portion of each of the wirings 153A, 153B, and 153C of the conductive pattern 15.

The wiring support portion 122A is the second metal support layer 12 of the connecting portion 3A (ref: FIG. 1). The wiring support portion 122A connects the terminal support portion 121A to the terminal support portion 121B. The wiring support portion 122A is disposed between the terminal support portion 121A and the terminal support portion 121B in the first direction. The wiring support portion 122A extends in the first direction. One end portion of the wiring support portion 122A in the first direction is connected to the terminal support portion 121A. The other end portion of the wiring support portion 122A in the first direction is connected to the terminal support portion 121B. The wiring support portion 122A supports the wiring 153A (ref: FIG. 1).

The wiring support portion 122B is the second metal support layer 12 of the connecting portion 3B (ref: FIG. 1). The wiring support portion 122B connects the terminal support portion 121A to the terminal support portion 121B. The wiring support portion 122B is disposed between the terminal support portion 121A and the terminal support portion 121B in the first direction. The wiring support portion 122B extends in the first direction. One end portion of the wiring support portion 122B in the first direction is connected to the terminal support portion 121A. The other end portion of the wiring support portion 122B in the first direction is connected to the terminal support portion 121B. The wiring support portion 122B supports the wiring 153B (ref: FIG. 1). The wiring support portion 122B is disposed spaced from the wiring support portion 122A in the second direction.

The wiring support portion 122C is the second metal support layer 12 of the connecting portion 3C (ref: FIG. 1). The wiring support portion 122C connects the terminal support portion 121A to the terminal support portion 121B. The wiring support portion 122C is disposed between the terminal support portion 121A and the terminal support portion 121B in the first direction. The wiring support portion 122C extends in the first direction. One end portion of the wiring support portion 122C in the first direction is connected to the terminal support portion 121A. The other end portion of the wiring support portion 122C in the first direction is connected to the terminal support portion 121B. The wiring support portion 122C supports the wiring 153C (ref: FIG. 1). The wiring support portion 122C is disposed spaced from the wiring support portion 122B in the second direction.

As shown in FIG. 2B, a width W2 of each of the wiring support portions 122A, 122B, and 122C is, for example, 300 μm or less, preferably 250 μm or less. The width W2 of each of the wiring support portions 122A, 122B, and 122C is preferably narrower than the width W0 of each of the connecting portions 3A, 3B, and 3C (ref: FIG. 1). The width W2 of each of the wiring support portions 122A, 122B, and 122C is, for example, 5 μm or more, preferably 10 μm or more. The width W2 of each of the wiring support portions 122A, 122B, and 122C is wider than the width W1 of the first metal support layer 11 of each of the connecting portions 3A, 3B, and 3C. That is, the width W2 of the wiring support portion 122A is wider than the width W1 of the first metal support layer 11 which is disposed between the wiring support portion 122A and the first insulating layer 14; the width W2 of the wiring support portion 122B is wider than the width W1 of the first metal support layer 11 which is disposed between the wiring support portion 122B and the first insulating layer 14; and the width W2 of the wiring support portion 122C is wider than the width W1 of the first metal support layer 11 which is disposed between the wiring support portion 122C and the first insulating layer 14.

The wiring support portion 122A covers the other surface in the thickness direction and both side surfaces in a width direction of the first metal support layer 11 which is disposed between the wiring support portion 122A and the first insulating layer 14. In other words, in the connecting portion 3A, the first metal support layer 11 is embedded in the wiring support portion 122A. Similarly, the wiring support portion 122B covers the other surface in the thickness direction and both side surfaces in the width direction of the first metal support layer 11 which is disposed between the wiring support portion 122B and the first insulating layer 14. In other words, in the connecting portion 3B, the first metal support layer 11 is embedded in the wiring support portion 122B. The wiring support portion 122C covers the other surface in the thickness direction and both side surfaces in the width direction of the first metal support layer 11 which is disposed between the wiring support portion 122C and the first insulating layer 14. In other words, in the connecting portion 3C, the first metal support layer 11 is embedded in the wiring support portion 122C.

The ratio (T2/W2) of the thickness T2 of the second metal support layer 12 to the width W2 of each of the wiring support portions 122A, 122B, and 122C is, for example, 1 or more, preferably 5 or more. When the ratio (T2/W2) is the above-described lower limit value or more, it is possible to improve heat dissipation. The ratio (T2/W2) is, for example, 30 or less, preferably 10 or less. When the ratio (T2/W2) is the above-described upper limit value or less, it is possible to suppress a reduction in support strength.

An interval D2 of each of the wiring support portions 122A, 122B, and 122C is, for example, 300 μm or less, preferably 250 μm or less. The interval D2 is, for example, 5 μm or more, preferably 10 μm or more. The interval D2 is preferably longer than the interval D1. Since the interval D2 is longer than the interval D1, it is possible to ensure the heat dissipation from space between the wiring support portion 122A and the wiring support portion 122B, and space between the wiring support portion 122B and the wiring support portion 122C.

(3) Bonding Layer

As shown in FIGS. 2A and 2B, the bonding layer 13 is, if necessary, disposed between the first metal support layer 11 and the second metal support layer 12. The bonding layer 13 is disposed on the other surface of the first metal support layer 11 in the thickness direction and both side surfaces of the first metal support layer 11 in the width direction. The bonding layer 13 is in contact with the second metal support layer 12. The bonding layer 13 ensures bondability of the second metal support layer 12 with respect to the first metal support layer 11. The bonding layer 13 is made of the metal. Examples of the material for the bonding layer 13 include copper, chromium, nickel, and cobalt.

A thickness of the bonding layer 13 is, for example, 0.05 μm or more, preferably 0.1 μm or more, and for example, 50 μm or less, preferably 10 μm or less.

(4) Insulating Layer

The first insulating layer 14 is disposed on one side of the first metal support layer 11 in the thickness direction. The first insulating layer 14 is disposed on one surface of the first metal support layer 11 in the thickness direction. The first insulating layer 14 is disposed between the first metal support layer 11 and the conductive pattern 15. The first insulating layer 14 insulates the first metal support layer 11 from the conductive pattern 15. The first insulating layer 14 is made of a resin. Examples of the resin include polyimide, maleimide, epoxy resins, polybenzoxazole, and polyester.

(5) Conductive Pattern

The conductive pattern 15 is disposed on one side of the first insulating layer 14 in the thickness direction. The conductive pattern 15 is disposed on one surface of the first insulating layer 14 in the thickness direction. The conductive pattern 15 is disposed on the opposite side of the first metal support layer 11 and the second metal support layer 12 with respect to the first insulating layer 14 in the thickness direction. The conductive pattern 15 is made of the metal. Examples of the metal include copper, silver, gold, iron, aluminum, chromium, and alloys of these. From the viewpoint of obtaining excellent electrical properties, preferably, copper is used. A shape of the conductive pattern 15 is not limited.

As shown in FIG. 1, the conductive pattern 15 has the plurality of terminals 151A, 151B, and 151C, the plurality of terminals 152A, 152B, and 152C, and the plurality of wirings 153A, 153B, and 153C.

The terminals 151A, 151B, and 151C are disposed on the terminal arrangement portion 2A. Each of the terminals 151A, 151B, and 151C has a square land shape. The terminals 151A, 151B, and 151C are disposed spaced from each other in the second direction.

The terminals 152A, 152B, and 152C are disposed on the terminal arrangement portion 2B. Each of the terminals 152A, 152B, and 152C has a square land shape. The terminals 152A, 152B, and 152C are disposed spaced from each other in the second direction.

The wiring 153A electrically connects the terminal 151A to the terminal 152A. One end portion of the wiring 153A is connected to the terminal 151A. The other end portion of the wiring 153A is connected to the terminal 152A. At least a portion of the wiring 153A is disposed on the connecting portion 3A.

The wiring 153B electrically connects the terminal 151B to the terminal 152B. One end portion of the wiring 153B is connected to the terminal 151B. The other end portion of the wiring 153B is connected to the terminal 152B. At least a portion of the wiring 153B is disposed on the connecting portion 3B. The wiring 153B is disposed spaced from the wiring 153A in the second direction.

The wiring 153C electrically connects the terminal 151C to the terminal 152C. One end portion of the wiring 153C is connected to the terminal 151C. The other end portion of the wiring 153C is connected to the terminal 152C. At least a portion of the wiring 153C is disposed on the connecting portion 3C. The wiring 153C is disposed spaced from the wiring 153B in the second direction.

(6) Second Insulating Layer

As shown in FIG. 2B, the second insulating layer 16 covers all of the wirings 153A, 153B, and 153C. The second insulating layer 16 is disposed on the first insulating layer 14 in the thickness direction. As shown in FIGS. 1 and 2A, the second insulating layer 16 does not cover the terminals 151A, 151B, and 151C and the terminals 152A, 152B, and 152C. The second insulating layer 16 is made of the resin. Examples of the resin include polyimide, maleimide, epoxy resins, polybenzoxazole, and polyester.

2. Method for Producing Wiring Circuit Board

Next, a method for producing the wiring circuit board 1 is described with reference to FIGS. 4A to 6.

The method for producing the wiring circuit board 1 includes a preparation step (ref: FIG. 4A), a first patterning step (ref: FIG. 4B), a second patterning step (ref: FIG. 4C), a third patterning step (ref: FIG. 4D), an etching step (ref: FIG. 5A), a bonding layer forming step (ref: FIG. 5B), and a deposition step (ref: FIG. 5C). The bonding layer forming step is, if necessary, carried out.

(1) Preparation Step

As shown in FIG. 4A, in the preparation step, a substrate S is prepared. In the present embodiment, the substrate S is a metal foil drawn from a roll of the metal foil. The material for the substrate S is the same as that of the first metal support layer 11.

(2) First Patterning Step

As shown in 4B, in the first patterning step, the first insulating layer 14 is formed on one side of the substrate S in the thickness direction. In the first patterning step, the first insulating layer 14 is formed on one surface of the substrate S in the thickness direction.

In order to form the first insulating layer 14, first, a solution (varnish) of a photosensitive resin is coated onto the substrate S and dried to form a coating film of the photosensitive resin. Next, the coating film of the photosensitive resin is exposed to light and developed. Thus, the first insulating layer 14 is formed into a predetermined pattern on the substrate S.

(3) Second Patterning Step

As shown in FIG. 4C, in the second patterning step, the conductive pattern 15 is formed on one side of the first insulating layer 14 in the thickness direction by electrolytic plating.

Specifically, first, a seed layer is formed on the surfaces of the first insulating layer 14 and the substrate S. The seed layer is, for example, formed by sputtering. Examples of the material for the seed layer include chromium, copper, nickel, titanium, and alloys of these.

Next, a plating resist is attached onto the first insulating layer 14 and the substrate S on which the seed layer is formed, and the plating resist is exposed to light in a state of shielding a portion where the conductive pattern 15 is formed.

Next, the exposed plating resist is developed. Then, the plating resist of the shielded portion is removed, and the seed layer is exposed in a portion where the conductive pattern 15 is formed. The plating resist of the exposed portion, that is, the portion where the conductive pattern 15 is not formed remains.

Next, the conductive pattern 15 is formed on the exposed seed layer by the electrolytic plating.

After the electrolytic plating is completed, the plating resist is peeled. Thereafter, the seed layer exposed by the peeling is removed by etching.

(4) Third Patterning Step

Next, as shown in FIG. 4D, in the third patterning step, the second insulating layer 16 is formed on the first insulating layer 14 and the conductive pattern 15 in the same manner as in the first insulating layer 14.

Thus, a circuit pattern is formed on one surface of the substrate S in the thickness direction.

(5) Etching Step

Next, as shown in FIG. 5A, in the etching step, the substrate S is etched to form the first metal support layer 11 on the other side of the first insulating layer 14 in the thickness direction.

Specifically, in the etching step, first, as shown in FIG. 6, an etching resist R1 is formed on both surfaces of the substrate S. The etching resist R1 covers a first region A1 where the terminal support portions 121A and 121B are formed, and does not cover a second region A2 where the wiring support portions 122A, 122B, and 122C are formed of the substrate S.

Next, as shown in FIG. 5A, the substrate S is wet-etched from one side of the substrate S in the thickness direction.

Then, the first insulating layer 14, the second insulating layer 16, and the etching resist R1 (ref: FIG. 6) function as a mask, and the substrate S of a portion where the first insulating layer 14, the second insulating layer 16, and the etching resist R1 are not formed is removed to form the first metal support layer 11 on the other surface of the first insulating layer 14 in the thickness direction.

In the etching step, the substrate S is over-etched. Thus, the width W1 of the first metal support layer 11 (ref: FIG. 2B) is narrower than the width of the first insulating layer 14 in a portion where the plurality of connecting portions 3A, 3B, and 3C are formed.

Thereafter, the etching resist R2 is peeled.

(6) Bonding layer Forming Step

Next, as shown in FIG. 5B, in the bonding layer forming step, before the deposition step, the bonding layer 13 is formed on the other surface of the first metal support layer 11 in the thickness direction.

The bonding layer 13 is, for example, formed by the electrolytic plating or sputtering. When the bonding layer 13 is formed by the electrolytic plating, first, a plating resist R2 is formed on one surface of the first metal support layer 11 in the thickness direction so as to cover the entire circuit pattern. Next, the bonding layer 13 is formed on the entire other surface of the first metal support layer 11 in the thickness direction by the electrolytic plating. When the bonding layer 13 is formed by the sputtering, the bonding layer 13 is formed on the entire other surface of the first metal support layer 11 in the thickness direction by the sputtering using a target made of the above-described material for the bonding layer 13.

(6) Deposition Step

Next, as shown in FIG. 5C, in the deposition step, after the etching step, a metal is deposited on the other side of the first metal support layer 11 in the thickness direction to form the second metal support layer 12. Specifically, the second metal support layer 12 is formed on the bonding layer 13. In the deposition step, the metal is, for example, deposited by the electrolytic plating, to form the second metal support layer 12.

Specifically, first, a plating resist R3 is attached onto the bonding layer 13 without peeling the plating resist R2, and the plating resist R3 is exposed to light in a state of shielding a portion where the second metal support layer 12 is formed.

Next, the exposed plating resist R3 is developed. Then, the plating resist of the shielded portion is removed, and the bonding layer 13 is exposed in a portion where the second metal support layer 11 is formed. The plating resist R3 of the exposed portion, that is, the portion where the second metal support layer 12 is not formed remains.

Next, the metal is deposited on the exposed bonding layer 13 by the electrolytic plating. Thus, the second metal support layer 12 is formed on the bonding layer 13.

3. Function and Effect

• • (1) According to the method of the wiring circuit board 1, as shown in FIG. 5C, by depositing the metal by the electrolytic plating, the second metal support layer 12 is patterned into a predetermined shape (shape having the terminal support portion 121A and the plurality of wiring support portions 122A, 122B, and 122C, ref: FIG. 3).

Therefore, as compared with the case of patterning the second metal support layer 12 by removing the metal by a method such as etching, it is possible to stably obtain the second metal support layer 12 in a desired shape without excessively removing the metal.

As a result, it is possible to achieve a fine pitch of the wiring support portions 122A, 122B, and 122C.

(2) According to the method of the wiring circuit board 1, as shown in FIG. 5B, before the deposition step, the bonding layer 13 made of the metal is formed on the other surface of the first metal support layer 11 in the thickness direction, and in the deposition step, the second metal support layer 12 is formed on the bonding layer 13.

Therefore, it is possible to ensure the bondability between the first metal support layer 11 and the second metal support layer 12.

(3) According to the wiring circuit board 1, as shown in FIG. 2B, a thick metal support layer consisting of the first metal support layer 11 and the second metal support layer 12 is provided on the other side of the first insulating layer 14 in the thickness direction.

Thus, it is possible to ensure the heat dissipation of the wiring circuit board 1.

Furthermore, since it is possible to produce the wiring circuit board 1 of such a configuration using the above-described production method, it is also possible to achieve the fine pitch of the wiring support portions 122A, 122B, and 122C.

(4) According to the wiring circuit board 1, as shown in FIG. 2B, the wiring support portion 122A covers the side surface of the first metal support layer 11 which is disposed between the wiring support portion 122A and the first insulating layer 14.

Therefore, it is possible to make the first metal support layer 11 function as an anchor of the wiring support portion 122A.

Thus, it is possible to stably support the wiring support portion 122A by the first metal support layer 11.

(5) According to the wiring circuit board 1, as shown in FIG. 2B, the bonding layer 13 which is disposed between the first metal support layer 11 and the second metal support layer 12 is further provided.

According to such a configuration, it is possible to ensure the bondability between the first metal support layer 11 and the second metal support layer 12.

While the illustrative embodiments of the present invention are provided in the above description, such is for illustrative purpose only and it is not to be construed as limiting the scope of the present invention. Modification and variation of the present invention that will be obvious to those skilled in the art is to be covered by the following claims.

INDUSTRIAL APPLICATION

The method for producing a wiring circuit board of the present invention is, for example, used in production of a wiring circuit board.

DESCRIPTION OF REFERENCE NUMERALS

• • 1 Wiring circuit board
  • 11 First metal support layer
  • 12 Second metal support layer
  • 13 Bonding layer
  • 14 First insulating layer (one example of insulating layer)
  • 15 Conductive pattern
  • 121A Terminal support portion
  • 122A Wiring support portion (one example of first wiring support portion)
  • 122B Wiring support portion (one example of second wiring support portion)
  • 151A Terminal (one example of first terminal)
  • 151B Terminal (one example of second terminal)
  • 153A Wiring (one example of first wiring)
  • 153B Wiring (one example of second wiring)
  • S Substrate

Claims

1. A method for producing a wiring circuit board comprising: a preparation step of preparing a substrate;a first patterning step of forming an insulating layer on one side of the substrate in a thickness direction;a second patterning step of forming a conductive pattern on one side of the insulating layer in the thickness direction, the conductive pattern having a first terminal, a second terminal, a first wiring connected to the first terminal, and a second wiring connected to the second terminal and disposed spaced from the first wiring;an etching step of etching the substrate to form the first metal support layer on the other side of the insulating layer in the thickness direction; andafter the etching step, a deposition step of depositing a metal on the other side of the first metal support layer in the thickness direction to form a second metal support layer having a terminal support portion supporting the first terminal and the second terminal, a first wiring support portion supporting the first wiring, and a second wiring support portion supporting the second wiring and disposed spaced from the first wiring support portion.

2. The method for producing a wiring circuit board according to claim 1 further comprising: a bonding layer forming step of forming a bonding layer made of a metal on the other surface of the first metal support layer in the thickness direction before the deposition step, whereinin the deposition step, the second metal support layer is formed on the bonding layer.

3. A wiring circuit board comprising: an insulating layer;a conductive pattern disposed on one side of the insulating layer in a thickness direction and having a first terminal, a second terminal, a first wiring connected to the first terminal, and a second wiring connected to the second terminal and disposed spaced from the first wiring;a first metal support layer disposed on the other side of the insulating layer in the thickness direction; anda second metal support layer disposed on the other side of the first metal support layer in the thickness direction and having a terminal support portion supporting the first terminal and the second terminal, a first wiring support portion supporting the first wiring, and a second wiring support portion supporting the second wiring and disposed spaced from the first wring support portion, whereina width of the first wiring support portion is wider than the width of the first metal support layer disposed between the first wiring support portion and the insulating layer.

4. The wiring circuit board according to claim 3, wherein the first wiring support portion covers a side surface of the first metal support layer disposed between the first wiring support portion and the insulating layer.

5. The wiring circuit board according to claim 3 further having a bonding layer disposed between the first metal support layer and the second metal support layer.