Claims
- 1. A method for recycling monitoring control wafers comprising:
- providing a bare silicon control wafer for performing an ion implantation process by a monitoring recipe;
- performing an annealing process and a destructive measurement on the wafer;
- cleaning the wafer and forming a screen layer on the wafer;
- measuring damages caused by the destructive measurement on the wafer;
- performing an ion drive-in process; and
- removing the screen layer.
- 2. The method of claim 1, wherein the screen layer includes an oxide layer.
- 3. The method of claim 1, wherein the ion drive-in process includes a rapid thermal process (RTP).
- 4. The method of claim 1, wherein the ion drive-in process includes a furnace process.
- 5. The method of claim 1, wherein the measurement of destruction includes a thermal wave measurement.
- 6. The method of claim 1, wherein the destructive measurement includes a Rs measurement.
- 7. The method of claim 1, wherein the annealing process includes a rapid thermal process.
- 8. The method of claim 1, wherein the annealing includes a furnace process.
Priority Claims (1)
Number |
Date |
Country |
Kind |
87106063 |
Apr 1998 |
TWX |
|
CROSS-REFERENCE TO RELATED APPLICATION
This application claims the priority benefit of Taiwan application Ser. No. 87106063, filed Apr. 21, 1998, the full disclosure of which is incorporated herein by reference.
US Referenced Citations (7)