Claims
- 1. A method for dicing semiconductor devices of different dimensions from a semiconductor substrate, comprising:
providing a semiconductor substrate including a plurality of semiconductor devices, at least two semiconductor devices of said plurality of semiconductor devices having at least one different corresponding dimension; and forming at least one die corresponding to one of said plurality of semiconductor devices.
- 2. The method of claim 1, wherein said forming said at least one die comprises forming at least one die with at least one semiconductor device thereon.
- 3. The method of claim 1, wherein said forming comprises varying a lateral distance between successive parallel cuts of a saw to form said at least one different corresponding dimension between at least two semiconductor devices of said plurality of semiconductor devices.
- 4. The method of claim 3, wherein said varying includes laterally indexing said saw in multiples of a fixed increment of distance relative to said semiconductor substrate.
- 5. The method of claim 3, wherein said varying includes multiple indexing said semiconductor substrate in multiples of a fixed increment of distance relative to said saw.
- 6. The method of claim 1, wherein said forming includes substantially simultaneously cutting said semiconductor substrate in at least two locations.
- 7. The method of claim 6, wherein said substantially simultaneously cutting is effected with a saw including at least two blades.
- 8. The method of claim 6, further including subsequently forming a single cut in said semiconductor substrate.
- 9. The method of claim 8, wherein said subsequently forming is effected with a single blade of a saw including at least two blades.
- 10. A method for dicing a semiconductor substrate, comprising:
making a first cut at least partially through the semiconductor substrate along a first street; making a second cut at least partially through the semiconductor substrate along a second street, said second cut being laterally spaced a first distance from said first cut; and making a third cut at least partially through the semiconductor substrate along a third street, said third cut spaced a second distance from said second cut, said second distance being a different distance than said first distance.
- 11. The method of claim 10, wherein said making said first, second and third cuts each comprise forming a scribe line on a surface of the semiconductor substrate.
- 12. The method of claim 11, further including cutting substantially through the semiconductor substrate along said scribe lines with subsequent aligned cuts.
- 13. The method of claim 10, wherein said making said first and second cuts are effected at substantially the same time and said making said third cut is effected at a different time relative to said making said first and second cuts.
- 14. The method of claim 10, comprising repeating a sequence of said making first, second and third cuts across at least a portion of a surface of the semiconductor substrate.
- 15. The method of claim 14, comprising rotating the semiconductor substrate substantially 90° and forming at least two additional cuts across streets on the surface of the semiconductor substrate.
- 16. The method of claim 10, comprising making at least one additional cut along another street, said at least one additional cut spaced a third distance from said third cut.
- 17. A method of dicing a semiconductor substrate, comprising:
substantially severing the semiconductor substrate along a first street; substantially severing the semiconductor substrate along a second street that extends substantially the same direction as said first street and is spaced a first substantial distance apart from said first street; and substantially severing the semiconductor substrate along a third street extending in substantially the same direction as said first and second streets, said third street spaced a second distance from said second street, said second distance being different than said first distance.
- 18. The method of claim 17, further comprising forming a scribe line along said first street.
- 19. The method of claim 18, wherein said forming said scribe line precedes said substantially severing the semiconductor substrate along said first street.
- 20. The method of claim 17, further comprising forming a scribe line along said second street.
- 21. The method of claim 20, wherein said forming said scribe line precedes said substantially severing the semiconductor substrate along said second street.
- 22. The method of claim 17, further comprising forming a scribe line along said third street.
- 23. The method of claim 22, wherein said forming said scribe line precedes said substantially severing the semiconductor substrate along said third street.
- 24. The method of claim 17, wherein said substantially severing the semiconductor device along said first and second streets are effected substantially simultaneously.
- 25. The method of claim 24, wherein said substantially severing the semiconductor device along said first and second streets are effected at a different time than said substantially severing the semiconductor device along said third street.
- 26. The method of claim 25, wherein said substantially severing the semiconductor device along said third street is effected independently of substantially severing the semiconductor device at any other location.
- 27. The method of claim 17, further comprising repeating a sequence of said substantially severing the semiconductor device along each of said first, second, and third streets.
- 28. The method of claim 17, further comprising substantially severing the semiconductor device along another street spaced a third distance apart from an adjacent one of said first, second, or third streets.
CROSS REFERENCE TO RELATED APPLICATION
[0001] This application is a continuation of application Ser. No. 09/434,147, filed Nov. 4, 1999, which is a continuation of Ser. No. 09/270,539, filed Mar. 17, 1999, now abandoned, which is a divisional of application Ser. No. 09/069,561, filed Apr. 29, 1998, now abandoned, which is a divisional of application Ser. No. 08/747,299, filed Nov. 12, 1996, now abandoned.
Divisions (2)
|
Number |
Date |
Country |
Parent |
09069561 |
Apr 1998 |
US |
Child |
09270539 |
Mar 1999 |
US |
Parent |
08747299 |
Nov 1996 |
US |
Child |
09069561 |
Apr 1998 |
US |
Continuations (2)
|
Number |
Date |
Country |
Parent |
09434147 |
Nov 1999 |
US |
Child |
09753159 |
Jan 2001 |
US |
Parent |
09270539 |
Mar 1999 |
US |
Child |
09434147 |
Nov 1999 |
US |