Uehara et al., “A Novel Local Interconnect Technology (MSD) for High-Performance Logic LSIs with Embedded SRAM”, 1996 Symposium on VLSI Technology Digest Of Technical Papers, pp 142-143. |
Miyamoto, Masafumi, “High Speed And Low-Power Interconnect Technology For Sub-Quarter Micron ASICS”, IEEE Transactions On Electron Devices, vol. 44, No. 2, Feb. 1997, pp. 250-256. |
Xu, Zheng, “Planar Multilevel Metallization Technologies for ULSI Devices”, SPIE vol. 2335, pp. 70-79. |
Santoro, C.J., “Thermal Cycling and Surface Reconstruction in Aluminum Thin Films”, J. Electrochem Soc: Solid State Science, vol. 116, No. 3, Mar. 1969. |
Shibata, Hideki, et al., “The Effects of Al(111) Crystal Orientation On Electromigration in Half-Micron Layered Al Interconnects”, Jpn. J. Appl. Phys. vol. 32 (1993) P. 1 No. 10 pp. 4479-3384. |
Voutsas, Apostolos T. et al., “Structure Engineering For Hillock-Free Pure Aluminum Sputter Deposition For gate And Source Line Fabrication In Active-Matrix Liquid Crystal Displays”, J. Vac. Sci. Technol. A 16(4), Jul./Aug. 1998, pp. 2668-2677. |
Xu, Zheng et al. “Al Planarization Process For Multilayer Metallization of Quarter Micrometer Devices”, Thin Solid Films 253 (1994), pp. 367-371. |
Robinson, Gail, “Al Hits sub-0.25 Micron Vias”, Electronic Engineering EE Times, Issue 939, Feb. 3, 1997. |
VLSI Technology, International Edition 1988, by S.M.Sze, “Physical Vapor Deposition” pp.: 386-391. |