in II-VI materials

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HELECTRICITY H01Electric elements H01SDEVICES USING STIMULATED EMISSION H01S5/00Semiconductor lasers

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H01S5/3059in II-VI materials

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Patents Grantslast 30 patents

Information Patent Grant
Diffusion blocking layer for a compound semiconductor structure
- Patent number 11,557,880
- Issue date Jan 17, 2023
- John Y. Spann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasmonic laser
- Patent number 11,056,856
- Issue date Jul 6, 2021
- International Business Machines Corporation
- Svenja Mauthe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffusion blocking layer for a compound semiconductor structure
- Patent number 10,833,480
- Issue date Nov 10, 2020
- Skorpios Technologies, Inc.
- John Y. Spann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,050,305
- Issue date Nov 1, 2011
- Sony Corporation
- Katsumi Kishino
- B82 - NANO-TECHNOLOGY
Information Patent Grant
EL semiconductor device
- Patent number 7,899,104
- Issue date Mar 1, 2011
- Hitachi, Ltd.
- Katsumi Kishino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group II-VI semiconductor devices
- Patent number 7,227,196
- Issue date Jun 5, 2007
- Robert H. Burgener, II
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photoelectric conversion functional element and production method t...
- Patent number 6,791,257
- Issue date Sep 14, 2004
- Japan Energy Corporation
- Kenji Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optoelectronic semiconductor component
- Patent number 6,147,365
- Issue date Nov 14, 2000
- Infineon Technologies AG
- Frank Fischer
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device comprising p-type ZnMgSSe layer
- Patent number 6,088,375
- Issue date Jul 11, 2000
- Philips Electronics North America Corporation
- John Petruzello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device
- Patent number 5,943,355
- Issue date Aug 24, 1999
- Sony Corporation
- Yumi Sanaka
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor light emitting device with a Mg superlattice structure
- Patent number 5,828,086
- Issue date Oct 27, 1998
- Sony Corporation
- Akira Ishibashi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
II-VI group compound semiconductor device and method for manufactur...
- Patent number 5,786,269
- Issue date Jul 28, 1998
- Sharp Kabushiki Kaisha
- Masanori Murakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing p-type doped layers, in particular, in II-VI...
- Patent number 5,772,759
- Issue date Jun 30, 1998
- Aixtron GmbH
- Klaus Heime
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device with defect decomposing and blo...
- Patent number 5,665,977
- Issue date Sep 9, 1997
- Sony Corporation
- Akira Ishibashi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
II-VI group compound semiconductor device metallic nitride ohmic co...
- Patent number 5,587,609
- Issue date Dec 24, 1996
- Sharp Kabushiki Kaisha
- Masanori Murakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping of IIB-VIA semiconductors during molecular beam epitaxy elec...
- Patent number 5,574,296
- Issue date Nov 12, 1996
- Minnesota Mining and Manufacturing Company
- Robert M. Park
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of fabricating a buried-ridge II-VI laser diode
- Patent number 5,538,918
- Issue date Jul 23, 1996
- Minnesota Mining and Manufacturing Company
- Michael A. Haase
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Blue-green laser diode
- Patent number 5,513,199
- Issue date Apr 30, 1996
- Minnesota Mining and Manufacturing Company
- Michael A. Haase
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Buried ridge II-VI laser diode
- Patent number 5,404,027
- Issue date Apr 4, 1995
- Minnesota Mining & Manufacturing Compay
- Michael A. Haase
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Graded composition ohmic contact for P-type II-VI semiconductors
- Patent number 5,396,103
- Issue date Mar 7, 1995
- Minnesota Mining and Manufacturing Company
- Jun Oiu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductive devices utilizing MgTe, MgSe, ZnSe, ZnTe and alloys...
- Patent number 5,379,313
- Issue date Jan 3, 1995
- NEC Research Institute, Inc.
- James D. Chadi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with monoatomic base layer between emitter and c...
- Patent number 5,373,186
- Issue date Dec 13, 1994
- Max-Planck-Gesellschaft zur Foerderung der Wissenschaften e.V.
- Erdmann Schubert
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor photodetector devices with pairs of monoatomic layers...
- Patent number 5,329,150
- Issue date Jul 12, 1994
- Max-Planck-Gesellschaft zur Foerderung der Wissenschaften e.V.
- Erdmann Schubert
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Blue-green laser diode
- Patent number 5,291,507
- Issue date Mar 1, 1994
- Minnesota Mining and Manufacturing Company
- Michael A. Haase
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Ohmic contact for p-type group II-IV compound semiconductors
- Patent number 5,274,269
- Issue date Dec 28, 1993
- Minnesota Mining and Manufacturing Company
- James M. DePuydt
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Doping of IIB-VIA semiconductors during molecular beam epitaxy usin...
- Patent number 5,248,631
- Issue date Sep 28, 1993
- Minnesota Mining and Manufacturing Company
- Robert M. Park
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optically bistable semiconductor device with pairs of monoatomic la...
- Patent number 5,216,260
- Issue date Jun 1, 1993
- Max-Planck-Gesellschaft zur Foerderung der Wissenschaften e.V.
- Erdmann Schubert
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for making an ohmic contact for p-type group II-VI compound...
- Patent number 5,213,998
- Issue date May 25, 1993
- Minnesota Mining and Manufacturing Company
- Jun Qiu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Injection laser with at least one pair of monoatomic layers of dopi...
- Patent number 5,060,234
- Issue date Oct 22, 1991
- Max Planck Gesellschaft zur Forderung der Wissenschaften
- Erdmann Schubert
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Quaternary II-VI materials for photonics
- Patent number 5,045,897
- Issue date Sep 3, 1991
- Santa Barbara Research Center
- William L. Ahlgren
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
PLASMONIC LASER
- Publication number 20200259312
- Publication date Aug 13, 2020
- International Business Machines Corporation
- Svenja Mauthe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EL SEMICONDUCTOR DEVICE
- Publication number 20090059985
- Publication date Mar 5, 2009
- Katsumi Kishino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20080298415
- Publication date Dec 4, 2008
- SONY CORPORATION
- Katsumi Kishino
- B82 - NANO-TECHNOLOGY
Information Patent Application
Group II-VI semiconductor devices
- Publication number 20040232412
- Publication date Nov 25, 2004
- Robert H. Burgener
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having ZnO based oxide semiconductor layer and...
- Publication number 20020030196
- Publication date Mar 14, 2002
- Kakuya Iwata
- H01 - BASIC ELECTRIC ELEMENTS

in II-VI materials

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Diffusion blocking layer for a compound semiconductor structure

Plasmonic laser

Diffusion blocking layer for a compound semiconductor structure

Semiconductor device

EL semiconductor device

Group II-VI semiconductor devices

Photoelectric conversion functional element and production method t...

Optoelectronic semiconductor component

Semiconductor device comprising p-type ZnMgSSe layer

Semiconductor light emitting device

Semiconductor light emitting device with a Mg superlattice structure

II-VI group compound semiconductor device and method for manufactur...

Process for producing p-type doped layers, in particular, in II-VI...

Semiconductor light emitting device with defect decomposing and blo...

II-VI group compound semiconductor device metallic nitride ohmic co...

Doping of IIB-VIA semiconductors during molecular beam epitaxy elec...

Method of fabricating a buried-ridge II-VI laser diode

Blue-green laser diode

Buried ridge II-VI laser diode

Graded composition ohmic contact for P-type II-VI semiconductors

Semiconductive devices utilizing MgTe, MgSe, ZnSe, ZnTe and alloys...

Bipolar transistor with monoatomic base layer between emitter and c...

Semiconductor photodetector devices with pairs of monoatomic layers...

Blue-green laser diode

Ohmic contact for p-type group II-IV compound semiconductors

Doping of IIB-VIA semiconductors during molecular beam epitaxy usin...

Optically bistable semiconductor device with pairs of monoatomic la...

Method for making an ohmic contact for p-type group II-VI compound...

Injection laser with at least one pair of monoatomic layers of dopi...

Quaternary II-VI materials for photonics

Patents Applicationslast 30 patents

PLASMONIC LASER

EL SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

Group II-VI semiconductor devices

Semiconductor device having ZnO based oxide semiconductor layer and...