Claims
- 1. A method for fabricating a semiconductor ingot comprising:discharging, to a waste tank, not only water but also Si particle generated by machining a crystal ingot into a wafer or machining a semiconductor wafer; adjusting waste water in said waste water tank to a predetermined density by using a filter device; transferring said waste water having said predetermined density to collection means; discharging said waste water under pressure; using said collection means to generate a block that comprises said Si particle at a predetermined water content and that does not react with a chemical in said waste water tank; and using said block comprising said Si particle as a material to be melted for recycling.
- 2. A method according to claim 1, wherein water used at said machining step contains carbon dioxide gas.
- 3. A method for fabricating a semiconductor ingot comprising:discharging, to a waste tank, not only water but also Si particle generated by machining a crystal ingot into a wafer or machining a semiconductor wafer; adjusting waste water in said waste water tank to a predetermined density by using a filter device; transferring said waste water having said predetermined density to collection means; discharging said waste water under pressure; using said collection means to generate a block that comprises said Si particle at a predetermined water content and that does not react with a chemical in said waste water tank; and using said block comprising said Si particle as a material to be melted for recycling, wherein machining comprises abrading, grinding, polishing, or dicing.
- 4. A method for fabricating a semiconductor ingot comprising:discharging, to a waste tank, not only water but also Si particle generated by machining a crystal ingot into a wafer or machining a semiconductor wafer; adjusting waste water in said waste water tank to a predetermined density by using a filter device wherein a solid composed of the same material as said Si particle is formed as a second filter on the surface of a first filter; transferring said waste water having said predetermined density to collection means; discharging said waste water under pressure; using said collection means to generate a block that comprises said Si particle at a predetermined water content and that does not react with a chemical in said waste water tank; and using said block consisting of said Si particle as a material to be melted for recycling.
- 5. A method according to claim 4, wherein said solid is particle dispersed in wastewater.
- 6. A method according to claim 4 or 5, wherein the surface layer of said second filter is refreshed.
- 7. A method according to claim 6, wherein, for the refreshment, air bubbles are passed through the surface of said second filter.
Priority Claims (5)
Number |
Date |
Country |
Kind |
11-148351 |
May 1999 |
JP |
|
11-148352 |
May 1999 |
JP |
|
11-148353 |
May 1999 |
JP |
|
11-324465 |
Nov 1999 |
JP |
|
2000-367653 |
Dec 2000 |
JP |
|
Parent Case Info
This application is a continuation-in-part of application Ser. No. 09/537,829 filed Mar. 29, 2000 now U.S. Pat. No. 6,299,513.
US Referenced Citations (5)
Number |
Name |
Date |
Kind |
5102594 |
Burlet et al. |
Apr 1992 |
A |
5240656 |
Scheeres |
Aug 1993 |
A |
5755614 |
Adams et al. |
May 1998 |
A |
5772900 |
Yorita et al. |
Jun 1998 |
A |
6299513 |
Tsuihiji et al. |
Oct 2001 |
B1 |
Foreign Referenced Citations (1)
Number |
Date |
Country |
11-19672 |
Jan 1999 |
JP |
Non-Patent Literature Citations (1)
Entry |
Patent Abstracts of Japan; 11-09672; Jan. 26,1999 |
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
09/537829 |
Mar 2000 |
US |
Child |
09/931554 |
|
US |