Claims
- 1. A method of fabricating a shallow trench isolation in a substrate, comprising:implanting ions into the substrate to form at least a well; forming a gate oxide layer on the substrate after the formation of the well; forming a first wiring layer on the gate oxide layer; forming a trench in the substrate through the first wiring layer and the gate oxide layer; forming a silicon oxide layer doped with nitrogen, germanium, titanium or other refractory metals to fill the trench; and patterning the first wiring layer and the gate oxide layer.
- 2. A method of fabricating a shallow trench isolation in a substrate, comprising:implanting ions into the substrate to form at least a well; forming a gate oxide layer on the substrate after the formation of the well; forming a first wiring layer on the gate oxide layer; forming a trench in the substrate through the first wiring layer and the gate oxide layer; forming a silicon oxide layer doped with nitrogen, germanium, titanium or other refractory metals to fill the trench, wherein the silicon oxide layer's dopant concentration level is controlled so as to have a thermal expansion coefficient and a Young's modulus comparable to the substrate; and patterning the first wiring layer and the gate oxide layer.
- 3. A method of fabricating a shallow trench isolation in a substrate, comprising:implanting ions into the substrate to form at least a well; forming a gate oxide layer on the substrate after the formation of the well; forming a first wiring layer on the gate oxide layer; forming a trench in the substrate through the first wiring layer and the gate oxide layer; forming a silicon oxide layer doped with nitrogen, germanium, titanium, or other refractory metals to fill the trench, wherein a glass transition temperature of the silicon oxide is reduced to allow for a lower temperature for an annealing process; and patterning the first wiring layer and the gate oxide layer.
CROSS-REFERENCE TO RELATED APPLICATION
This ia a Divisional application Ser. No. 09/360,102 filed on Jul. 23, 1999, now abandoned.
This application is a continuation-in-part of prior applications Ser. No. 08/915,661, filed Aug. 21, 1997 and Ser. No. 09/304,143, filed May 3, 1999.
US Referenced Citations (7)
Continuation in Parts (2)
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Number |
Date |
Country |
Parent |
09/304143 |
May 1999 |
US |
Child |
09/360102 |
|
US |
Parent |
08/915661 |
Aug 1997 |
US |
Child |
09/304143 |
|
US |