Claims
- 1. A method of fabricating an infrared optical bulk channel field effect transistor, comprising:forming a ferroelectric thin film on a Si substrate, the substrate, comprising a first semiconductor layer and a second semiconductor layer provided on the first semiconductor layer, the first semiconductor layer and the second semiconductor layer together forming a p-n junction; forming a thin film of metal in a region of the ferroelectric thin film to form a gate electrode; etching the ferroelectric thin film to form source and drain windows; forming a source electrode over the source window and forming a drain electrode over the drain window; and forming a substrate electrode on an opposite side of the Si substrate from the ferroelectric thin film.
- 2. A method of fabricating an infrared optical bulk channel field effect transistor as recited in claim 1, wherein the ferroelectric thin film is a thin film of titanic acid lead.
- 3. A method of fabricating an infrared optical bulk channel field effect transistor as recited in claim 1, wherein the ferroelectric thin film is formed by RF magnetron sputtering or laser evaporation.
- 4. A method of fabricating an infrared optical bulk channel field effect transistor as recited in claim 3, wherein the ferroelectric thin film is a thin film of titanic acid lead.
Parent Case Info
This application is a division of application Ser. No. 08/762,961, filed Dec. 12, 1996, now U.S. Pat. No. 5,838,034.
US Referenced Citations (18)
Foreign Referenced Citations (4)
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Non-Patent Literature Citations (2)
Entry |
Chen et al., “An Infrared Optical Field Effect Transistor with High Speed Response”, Appl. Phys. Lett. 68(3), pp. 1-2, Jan. 15, 1996. |
“Matsushita Uses PbTiO3 Thin Film for High Response Speed Pyroelectric IR Imager”, Nikkei Electronics Asia, pp. 36-37, Jan. 1993. |