METHOD OF FABRICATING PHOTORESIST THINNER

Abstract

A method of fabricating photoresist thinner is provided. A photoresist material and a first photoresist thinner are provided. The first photoresist thinner is suitable for thinning the photoresist material. The first photoresist thinner comprises a plurality of first solvents each having a first Hansen parameter. The photoresist material has a second Hansen parameter. A first region is defined according to the first Hansen parameters. A plurality of second solvents is selected according to the first Hansen parameters of the first solvents. Each second solvent has a third Hansen parameters corresponding to at least one of the first solvents. The second solvents are mixed to form a second photoresist thinner. The second photoresist thinner has a fourth Hansen parameter located within the first region. Therefore, the cost of the photoresist thinner can be reduced.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention, where:

FIG. 1 is a flow diagram showing the method of fabricating photoresist thinner according to the embodiment of the present invention.

FIG. 2 is a diagram showing a Hansen model between a solution mixture of ethanol and toluene and tetrahydrofuran.

Claims

1. A method of fabricating photoresist thinner, comprising: providing a photoresist material and a first photoresist thinner, wherein the first photoresist thinner comprises a plurality of first solvents, and each of the first solvents has a first Hansen parameter and the photoresist material has a second Hansen parameter;defining a first region using the first Hansen parameters;selecting a plurality of corresponding second solvents according to the first Hansen parameters of the first solvents, wherein each of the second solvents has a third Hansen parameter that corresponds to one of the first solvents; andmixing the second solvents to form a second photoresist thinner having a fourth Hansen parameter located within the first region.

2. The method of claim 1, wherein mixing the second solvents to form the second photoresist thinner comprises: mixing the second solvents in different ratios to obtain a plurality of solution mixtures;mixing each of the solution mixtures and the photoresist material in a predetermined ratio; andobserving the photoresist material to determine whether the photoresist material dissolves so as to select the second photoresist thinner from the solution mixtures.

3. The method of claim 2, wherein the predetermined ratio of mixing the solution mixture to the photoresist material is 3:1.

4. The method of claim 1, wherein selecting the second solvents comprises referring to the physical properties of the solvent.

5. The method of claim 4, wherein the physical properties include surface tension, boiling point, and density of the solvent.

6. The method of claim 1, wherein the second solvents comprise a polar-ketone solvent.

7. The method of claim 1, wherein the second solvents comprise a hydrogen-bonding-ketone solvent and a hydrogen-bonding-ether solvent.

8. The method of claim 1, wherein the second solvents comprise a dispersion-alkylbenzene solvent and a dispersion-benzene solvent.

9. The method of claim 1, wherein the first region is a straight line and the second Hansen parameter is close to the straight line.

10. The method of claim 1, wherein the first region is an area region and the second Hansen parameter is located in the area region.

11. The method of claim 1, wherein the third Hansen parameters define a second region and the second Hansen parameter is located within the second region.

12. The method of claim 1, wherein the fourth Hansen parameters are close to the second Hansen parameter.