Number | Date | Country | Kind |
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320392 | Jun 1997 | PL |
This is a National Stage Application of PCT/PL 98/0023 which was filed Jun. 3, 1998.
Filing Document | Filing Date | Country | Kind | 102e Date | 371c Date |
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PCT/PL98/00023 | WO | 00 | 12/6/1999 | 12/6/1999 |
Publishing Document | Publishing Date | Country | Kind |
---|---|---|---|
WO98/55671 | 12/10/1998 | WO | A |
Number | Name | Date | Kind |
---|---|---|---|
5637531 | Porowski et al. | Jun 1997 | |
6001748 | Tanaka et al. | Dec 1999 |
Number | Date | Country |
---|---|---|
2313976 | Jan 1977 | FR |
1551403 | Aug 1979 | GB |
9504845 | Feb 1995 | WO |
9713891 | Apr 1997 | WO |
Entry |
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Patent Abstracts of Japan, vol. 98, No. 5 & JP 10 007496 A (Hitachi Cable Ltd). |
Porowski et al: “Thermodynamical Properties of III-V Nitrides and Crystal Growth of Gan at High N2 Pressure” Journal of Crystal Growth., vol. 178, Jun. 2, 1997, pp. 174-188,. |
Karpinski et al: “Equilibrium Pressure of N2 Over Gan and High Pressure Solution Growth of Gan” Journal of Crystal Growth., vol. 66, 1984, pp. 1-10. |
Yamane et al: “Preparation of Gan Single Crystals Using A NA Flux” Chemistry of Materials, vol. 9, Feb. 1997, pp. 413-416. |