Number | Date | Country | Kind |
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96-07663 | Mar 1996 | KR |
This application is a continuation-in-part application of U.S. patent application Ser. No. 08/688,521 filed Jul. 30, 1996 and entitled, “a method of depositing a platinum layer with a preferred (200) orientation on a substrate and an electronic device having a platinum layer deposited by the method thereof”, now abandoned.
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4511451 | Sella et al. | Apr 1985 | |
4971853 | Chaiken et al. | Nov 1990 | |
5367285 | Swinehart et al. | Nov 1994 | |
5679410 | Sugita et al. | Oct 1997 | |
5736422 | Lee et al. | Apr 1998 | |
6025205 | Park et al. | Feb 2000 |
Number | Date | Country |
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9607763 | Oct 1997 | KR |
Entry |
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Growth and characterization of reactively sputtered thin-film platinum oxides J.R. McBride, et al, Journal of Applied Physics 69(3), Feb. 1, 1991 pp. 1596-1604. |
Highly (200)-oriented Pt films on SiO2/Si substrates by seed selection through amorphization and controlled and controlled grain growth, Kim, et al Journal of Material Research, Mar. 1999. |
Changes in preferred orientation of Pt films deposited by a DC magnetron sputtering using Ar/O2 gas mixtures, Kim,et al, Journal of Material Research, Apr. 1999. |
(100) Oriented Platinum Thin Films Deposited by DC Magnetron Sputtering on SiO2/Si Substrates, Material Research Society Symposium proceedings, vol. 441, May 1997. |
Number | Date | Country | |
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Parent | 08/688521 | Jul 1996 | US |
Child | 09/320797 | US |