Claims
- 1. A method of manufacturing a semiconductor apparatus having a capacitor comprising the steps of:
- forming a plurality of transistors on a common silicon substrate;
- forming a contact hole in an inter-layer insulating film formed over said silicon substrate to expose a source or drain region of each of said transistors;
- performing a surface processing for providing hydrogen atoms on an exposed surface of said source or drain region at earth contact hole;
- irradiating, with an energy beam on a selective exposed surface of each contact hole, thereby forming an irradiated exposed surface and a non-irradiated exposed surface on said contact hole;
- exposing said substrate to an oxygen containing atmosphere, thereby providing the irradiated exposed surface with oxygen atoms;
- depositing a metal selectively, thereby, forming a metal region only within the contact hole having the non-irradiated exposed surface, to serve as one electrode of said capacitor;
- forming a dielectric film on a surface of said metal region to serve as a dielectric layer of said capacitor; and
- forming a metal film on said dielectric layer to serve as another electrode of said capacitor.
- 2. A method of manufacturing a semiconductor apparatus according to claim 1, wherein said metal region is formed into a shape elongated longitudinally.
- 3. A method of manufacturing a semiconductor apparatus according to claim 1, wherein said metal region is deposited on one of the source or the drain of a MOSFET and a gate electrode region.
- 4. A method of manufacturing a semiconductor apparatus according to claim 1, wherein said surface processing for supplying hydrogen atoms uses hydrofluoric acid.
- 5. A method of manufacturing a semiconductor apparatus according to claim 1, wherein said energy beam is electron and ion beams.
- 6. A method of manufacturing a semiconductor apparatus according to claim 1, wherein deposition of said metal region is performed by a chemical vapor deposition using organic metal as a raw material.
- 7. A method of manufacturing a semiconductor apparatus according to claim 6, wherein said organic metal is alkyl aluminum hydride.
- 8. A method of manufacturing a semiconductor apparatus according to claim 7, wherein said alkyl aluminum hydride is dimethyl aluminum hydride.
- 9. A method of manufacturing a semiconductor apparatus according to claim 1, wherein said metal region includes at least an atom selected from a group consisting of Si, Ti and Cu.
Priority Claims (4)
Number |
Date |
Country |
Kind |
4-203889 |
Jul 1992 |
JPX |
|
4-205544 |
Jul 1992 |
JPX |
|
4-242591 |
Aug 1992 |
JPX |
|
4-242592 |
Aug 1992 |
JPX |
|
Parent Case Info
This application is a division of application Ser. No. 08/327,799 filed Oct. 24, 1994, which is a division of application Ser. No. 08/098,871 filed Jul. 29, 1993, now abandoned.
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Non-Patent Literature Citations (4)
Entry |
The following US application |
U.S. pat. 5,476,815, Dec. 1995, filed on Jul. 19, 1994. |
US 5,492,734, Feb. 20, 1996, filed on Jun. 17, 1995. |
U.S. pat. 5,438,218 Aug. 1995 filed on Apr. 30, 1993. |
Divisions (2)
|
Number |
Date |
Country |
Parent |
327799 |
Oct 1994 |
|
Parent |
98871 |
Jul 1993 |
|