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4489482 | Keyser et al. | Dec 1984 | |
4789648 | Chow et al. | Dec 1988 | |
4962058 | Cronin et al. | Oct 1990 | |
4999160 | Lowrey et al. | Mar 1991 | |
5019531 | Awaya et al. | May 1991 | |
5240880 | Hindman et al. | Aug 1993 | |
5262354 | Cote et al. | Nov 1993 | |
5266516 | Ho | Nov 1993 | |
5284799 | Sato | Feb 1994 | |
5300307 | Frear et al. | Apr 1994 | |
5342806 | Asahina | Aug 1994 | |
5391517 | Gelatos et al. | Feb 1995 | |
5447887 | Filipiak et al. | Sep 1995 | |
5451551 | Krishnan et al. | Sep 1995 | |
5527739 | Parrillo | Jun 1996 | |
5565707 | Colgan et al. | Oct 1996 | |
5612254 | Mu et al. | Mar 1997 | |
5633199 | Fiordalice et al. | May 1997 | |
5658828 | Lin et al. | Aug 1997 |
Entry |
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S. Sun et al., "Performance of MOCVD Tantalum Nitride Diffusion Barrier for Copper Metallization," 1995 Symposium on VLSI Technology Digest of Technical Papers, pp. 29-30. |