Claims
- 1. A method for plasma etching a dielectric material, comprising:
providing a semiconductor substrate having the dielectric material formed thereover; applying a mask over the oxide of silicon so as to leave at least one aperture in the mask through which a surface of the oxide of silicon is exposed; disposing the semiconductor substrate in a plasma etch chamber; and generating a carbon monoxide devoid gas plasma comprising CHF3 and CH2F2 into an area proximate the at least one aperture.
- 2. The method of claim 1, wherein disposing the semiconductor substrate in a plasma etch chamber includes providing the plasma etch chamber having a roof over the semiconductor substrate, a ring around the semiconductor substrate, and a chuck supporting the semiconductor substrate.
- 3. The method of claim 2, further comprising maintaining the plasma etch chamber roof at a temperature between about 115° C. and 150° C.
- 4. The method of claim 3, further comprising maintaining the plasma etch chamber roof at a temperature of about 140° C.
- 5. The method of claim 2, further comprising maintaining the plasma etch chamber ring at a temperature between about 200° C. and 250° C.
- 6. The method of claim 5, further comprising maintaining the plasma etch chamber ring at a temperature of about 200° C.
- 7. The method of claim 2, further comprising maintaining the plasma etch chamber chuck at a temperature of between about −10° C. and 30° C.
- 8. The method of claim 7, further comprising maintaining the plasma etch chamber chuck at a temperature of between about −10° C.
- 9. The method of claim 2, further comprising maintaining a pressure in the plasma etch chamber at greater than about 0.67 Newtons per square meter (5 mTorr).
- 10. The method of claim 9, further comprising maintaining a pressure in the plasma etch chamber at between about 2.67 Newtons per square meter and 8.7 Newtons per square meter (20 mTorr and 65 mTorr).
- 11. The method of claim 2, further comprising maintaining a source power in the plasma etch chamber at between about 750 watts and 2000 watts.
- 12. The method of claim 2, further comprising maintaining a source power in the plasma etch chamber at between about 600 watts and 1000 watts.
- 13. The method of claim 1, wherein generating a carbon monoxide devoid gas plasma comprising CHF3 and CH2F2 into an area proximate the at least one aperture comprises introducing CHF3 into the plasma etch chamber at a flow rate of between about 10 and 40 sccm and introducing CH2F2 into the plasma etch chamber at a flow rate between about 10 and 40 sccm.
- 14. The method of claim 13, further comprising introducing argon gas into the plasma etch chamber at a flow rate of between about 0 and 100 sccm.
- 15. The method of claim 1, further comprising substantially eliminating the presence of CH2F2 proximate the at least one aperture after an initial time period.
- 16. The method of claim 1, further comprising maintaining the area proximate the at least one aperture at a temperature of about 150° C. or below.
- 17. The method of claim 1, further comprising effectuating the method in an etch chamber of an IPS system.
- 18. The method of claim 1, wherein disposing the semiconductor substrate in a plasma etch chamber comprises:
providing the plasma etch chamber having a roof over the semiconductor substrate, a ring around the semiconductor substrate, and a chuck supporting the semiconductor substrate; maintaining the plasma etch chamber roof at a temperature of about 140° C.; maintaining the plasma etch chamber ring at a temperature of about 200° C.; maintaining the plasma etch chamber chuck at a temperature of about −10° C.; maintaining a pressure in the plasma etch chamber at about 2.67 Newtons per square meter (20 mTorr); maintaining a source power in the plasma etch chamber at about 1000 watts; maintaining a bias power in the plasma etch chamber at about 800 watts; introducing CHF3 into the plasma etch chamber at a flow rate of about 25 sccm; and introducing CH2F2 into the plasma etch chamber at a flow rate of about 10 sccm.
- 19. The method of claim 1, wherein disposing the semiconductor substrate in a plasma etch chamber comprises:
providing the plasma etch chamber having a roof over the semiconductor substrate, a ring around the semiconductor substrate, and a chuck supporting the semiconductor substrate; maintaining the plasma etch chamber roof at a temperature of about 140° C.; maintaining the plasma etch chamber ring at a temperature of about 200° C.; maintaining the plasma etch chamber chuck at a temperature of about −10° C.; maintaining a pressure in the plasma etch chamber at about 5.34 Newtons per square meter (40 mTorr); maintaining a source power in the plasma etch chamber at about 1000 watts; maintaining a bias power in the plasma etch chamber at about 800 watts; introducing CHF3 into the plasma etch chamber at a flow rate of about 25 sccm; introducing CH2F2 into the plasma etch chamber at a flow rate of about 10 sccm; and introducing argon gas into the plasma etch chamber at a flow rate of about 40 sccm.
- 20. The method of claim 1, wherein disposing the semiconductor substrate in a plasma etch chamber comprises:
providing the plasma etch chamber having a roof over the semiconductor substrate, a ring around the semiconductor substrate, and a chuck supporting the semiconductor substrate; maintaining the plasma etch chamber roof at a temperature of about 140° C.; maintaining the plasma etch chamber ring at a temperature of about 200° C.; maintaining the plasma etch chamber chuck at a temperature of about −10° C.; maintaining a pressure in the plasma etch chamber at about 6.0 Newtons per square meter (45 mTorr); maintaining a source power in the plasma etch chamber at about 1525 watts; maintaining a bias power in the plasma etch chamber at about 900 watts; introducing CHF3 into the plasma etch chamber at a flow rate of about 20 sccm; and introducing CH2F2 into the plasma etch chamber at a flow rate of about 25 sccm.
- 21. A method for plasma etching a dielectric material, comprising:
providing a semiconductor substrate having the dielectric material formed there over; placing the semiconductor substrate within a plasma etch chamber; introducing CHF3 and CH2F2 into the plasma etch chamber at a flow rate between about 10 sccm and 40 sccm; and generating a carbon monoxide devoid gas plasma comprising CHF3 and CH2F2 within the plasma etch chamber.
- 22. The process of claim 21, wherein disposing the semiconductor substrate in a plasma etch chamber includes providing a plasma etch chamber having a roof over the semiconductor substrate, a ring around the semiconductor substrate, and a chuck supporting the semiconductor substrate.
- 23. The process of claim 22, further comprising maintaining the plasma etch chamber roof at a temperature between about 115° C. and 150° C.
- 24. The process of claim 23, further comprising maintaining the plasma etch chamber roof at a temperature of about 140° C.
- 25. The process of claim 22, further comprising maintaining the plasma etch chamber ring at a temperature between about 200° C. and 250° C.
- 26. The process of claim 25, further comprising maintaining the plasma etch chamber ring at a temperature of about 200° C.
- 27. The process of claim 22, further comprising maintaining the plasma etch chamber chuck at a temperature of between about −10° C. and 30° C.
- 28. The process of claim 27, further comprising maintaining the plasma etch chamber chuck at a temperature of about −10° C.
- 29. The process of claim 22, further comprising maintaining a pressure in the plasma etch chamber at greater than about 5 mTorr.
- 30. The process of claim 29, further comprising maintaining a pressure in the plasma etch chamber at between about 20 mTorr and 65 mTorr.
- 31. The process of claim 21, wherein disposing the semiconductor substrate in a plasma etch chamber comprises disposing the semiconductor substrate into a plasma etch chamber having a source power maintained at between about 750 watts and 2000 watts.
- 32. The process of claim 21, wherein disposing the semiconductor substrate in a plasma etch chamber comprises disposing the semiconductor substrate into a plasma etch chamber having a bias power maintained at between about 600 watts and 1000 watts.
- 33. The process of claim 21, further comprising introducing argon gas into the plasma etch chamber at a flow rate of between about 0 and 100 sccm.
- 34. The process of claim 21, further comprising substantially eliminating the presence of CH2F2 proximate the semiconductor substrate after an initial time period.
- 35. The process of claim 21, wherein generating a carbon monoxide devoid gas plasma comprising CHF3 and CH2F2 within the plasma etch chamber comprises generating a gas plasma comprising CHF3 and CH2F2 in an area proximate the semiconductor substrate and maintaining the area proximate the semiconductor substrate at a temperature of about 150° C. or below.
- 36. The process of claim 21, wherein disposing the semiconductor substrate in the plasma etch chamber includes disposing the semiconductor substrate in an etch chamber of an IPS system.
- 37. The process of claim 21, wherein introducing the CHF3 and CH2F2 into the plasma etch chamber at a flow rate between about 10 sccm and 40 sccm comprises introducing the CHF3 into the plasma etch chamber at a flow rate between about 20 sccm and 25 sccm.
- 38. The process of claim 1, wherein introducing the CHF3 and CH2F2 into the plasma etch chamber at a flow rate between about 10 sccm and 40 sccm comprises introducing CH2F2 into the plasma etch chamber at a flow rate between about 10 sccm and 25 sccm.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation of application Ser. No. 10/060,436, filed Jan. 29, 2002, pending, which is a continuation of application Ser. No. 09/619,101, filed Jul. 19, 2000, now U.S. Pat. No. 6,342,165, issued Jan. 29, 2002, which is a continuation of application Ser. No. 09/099,090, filed Jun. 17, 1998, now U.S. Pat. No. 6,123,862, issued Sep. 26, 2000, which claims the benefit of U.S. Provisional Application No. 60/082,908, filed Apr. 24, 1998.
Provisional Applications (1)
|
Number |
Date |
Country |
|
60082908 |
Apr 1998 |
US |
Continuations (3)
|
Number |
Date |
Country |
Parent |
10060436 |
Jan 2002 |
US |
Child |
10448905 |
May 2003 |
US |
Parent |
09619101 |
Jul 2000 |
US |
Child |
10060436 |
Jan 2002 |
US |
Parent |
09099090 |
Jun 1998 |
US |
Child |
09619101 |
Jul 2000 |
US |