Claims
- 1. A method for producing a plasma, comprising:
providing a plasma etch chamber having a roof, a ring, and a chuck; introducing a gas mixture free of CO; introducing CHF3 into said plasma etch chamber at a flow rate of between about 10 sccm and 40 sccm; introducing CH2F2 into said plasma etch chamber at a flow rate of between about 10 sccm and 40 sccm; maintaining said ring at a temperature of between about 200° C. and 250° C.; maintaining said roof at a temperature of between about 115° C. and 150° C.; maintaining said chuck at a temperature of between about −10° C. and 30° C. maintaining a pressure within said plasma etch chamber of about 5 mTorr or greater; and generating a gas plasma comprising CHF3 and CH2F2 within said plasma etch chamber.
- 2. The method of claim 1, further including maintaining said roof at a temperature of about 140° C.
- 3. The method of claim 1, further including maintaining said ring at a temperature of about 200° C.
- 4. The method of claim 1, further including maintaining said chuck at a temperature of about −10° C.
- 5. The method of claim 1, further including maintaining the pressure in said plasma etch chamber at a pressure of between 20 mTorr and 65 mTorr.
- 6. The method of claim 1, further comprising maintaining a source power of between about 750 watts and 2000 watts.
- 7. The method of claim 1, further comprising maintaining a bias power of between about 600 watts and 1000 watts.
- 8. The method of claim 1, further comprising introducing argon gas into said plasma etch chamber at a flow rate up to about 100 sccm.
- 9. The method of claim 1, further comprising reducing the flow of CH2F2 into said plasma etch chamber to 0 sccm.
- 10. The method of claim 1, wherein said generating said gas plasma comprising CHF3 and CH2F2 within said plasma etch chamber includes generating a gas plasma comprising CHF3 and CH2F2 in an area proximate said chuck and maintaining said area proximate said chuck at a temperature of about 150° C. or below.
- 11. The method of claim 1, wherein providing said plasma etch chamber having a roof, a ring, and a chuck comprises providing a plasma etch chamber having a silicon roof and a silicon ring.
- 12. The method of claim 1, wherein said introducing said CHF3 and CH2F2 into said plasma etch chamber at a flow rate of between about 10 sccm and 40 sccm comprises introducing said CHF3 into said plasma etch chamber at a flow rate of between about 20 sccm and 25 sccm.
- 13. The method of claim 1, wherein said introducing said CHF3 and CH2F2 into said plasma etch chamber at a flow rate of between about 10 sccm and 40 sccm comprises introducing CH2F2 into said plasma etch chamber at a flow rate between about 10 sccm and 25 sccm.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation of application Ser. No. 09/619,101, filed Jul. 19, 2000, scheduled to issue on Jan. 29, 2002 as U.S. Pat. No. 6,342,165, which is a continuation of application Ser. No. 09/099,090, filed Jun. 17, 1998, now U.S. Pat. No. 6,123,862, issued Sep. 26, 2000, which claims the benefit of U.S. Provisional Application No. 60/082,908, filed Apr. 24, 1998.
Provisional Applications (1)
|
Number |
Date |
Country |
|
60082908 |
Apr 1998 |
US |
Continuations (2)
|
Number |
Date |
Country |
Parent |
09619101 |
Jul 2000 |
US |
Child |
10060436 |
Jan 2002 |
US |
Parent |
09099090 |
Jun 1998 |
US |
Child |
09619101 |
Jul 2000 |
US |