Number | Name | Date | Kind |
---|---|---|---|
4897368 | Kobushi et al. | Jan 1990 | A |
5034348 | Hartswick et al. | Jul 1991 | A |
5352631 | Sitaram et al. | Oct 1994 | A |
5447875 | Moslehi | Sep 1995 | A |
5937300 | Sekine et al. | Aug 1999 | A |
6074922 | Wang et al. | Jun 2000 | A |
6184117 | Lu | Feb 2001 | B1 |
6238986 | Kepler et al. | May 2001 | B1 |
6238989 | Wc Huang et al. | May 2001 | B1 |
6268257 | Wieczorek et al. | Jul 2001 | B1 |
6268286 | Gauthier et al. | Jul 2001 | B1 |
6268295 | Ohta et al. | Jul 2001 | B1 |
6271133 | Lim et al. | Aug 2001 | B1 |
6274445 | Nouri | Aug 2001 | B1 |
6277735 | Matsubara | Aug 2001 | B1 |
6281102 | Cao et al. | Aug 2001 | B1 |
Entry |
---|
Wolf and Tauber; Silicon Processing for the VLSI Era vol. 1: Process Technology; 1986 Lattice Press; p. 198.* |
Goto et al., “Optimization of Salicide Processes for sub 0.1-μm CMOS Devices,” 1994 Symposium on VLSI Technology Digest of Technical Papers, pp. 119-120, Apr. 1994. |
Sohn et al., “High Thermal Stability and Low Junction Leakage Current of Ti Capped Co Salicide and its Feasibility for High Thermal Budget CMOS Devices,” Mar. 1998. |
Goto et al., “A New Leakage Mechanism of Co Salicide and Optimized Process Conditions,” IEEE Transactions on Electron Devices, vol. 46, No. 1, p. 117, Jan. 1999. |