the conductive layers comprising silicides

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H01L21/28518

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/28518the conductive layers comprising silicides

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Epitaxial layers in source/drain contacts and methods of forming th...
- Patent number 12,369,386
- Issue date Jul 22, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ding-Kang Shih
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for depositing a Group IV semiconductor and related semicond...
- Patent number 12,363,960
- Issue date Jul 15, 2025
- ASM IP Holding B.V.
- Joe Margetis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 12,362,280
- Issue date Jul 15, 2025
- Renesas Electronics Corporation
- Takeshi Kawamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inner spacer features for multi-gate transistors
- Patent number 12,363,988
- Issue date Jul 15, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Han Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,363,992
- Issue date Jul 15, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuan-Kan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a uniform and thin silicide layer on an...
- Patent number 12,362,187
- Issue date Jul 15, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kai-Hsuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming source/drain regions with quadrilateral layers
- Patent number 12,363,945
- Issue date Jul 15, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tsz-Mei Kwok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with contact via structures that are latera...
- Patent number 12,356,704
- Issue date Jul 8, 2025
- SanDisk Technologies, Inc.
- Kouta Onogi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure passivating species drive-in method and structure fo...
- Patent number 12,354,876
- Issue date Jul 8, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsiao-Kuan Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,342,580
- Issue date Jun 24, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 12,342,616
- Issue date Jun 24, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 12,342,615
- Issue date Jun 24, 2025
- Sony Group Corporation
- Shinya Yamakawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with shallow trench isolation features with...
- Patent number 12,336,285
- Issue date Jun 17, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned method for vertical recess for 3D device integration
- Patent number 12,336,274
- Issue date Jun 17, 2025
- Tokyo Electron Limited
- Jeffrey Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal contacts to group IV semiconductors by inserting interfacial...
- Patent number 12,336,263
- Issue date Jun 17, 2025
- ACORN SEMI, LLC
- Walter A. Harrison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance and reduced reactivity approaches for fabricating co...
- Patent number 12,328,927
- Issue date Jun 10, 2025
- Intel Coporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Void-free contact trench fill in gate-all-around FET architecture
- Patent number 12,327,761
- Issue date Jun 10, 2025
- Applied Materials, Inc.
- Nicolas Louis Breil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate structures and methods of forming the same
- Patent number 12,324,191
- Issue date Jun 3, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structures in semiconductor devices
- Patent number 12,315,863
- Issue date May 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for preventing silicide contamination during t...
- Patent number 12,317,488
- Issue date May 27, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including backside vias and methods of formin...
- Patent number 12,310,057
- Issue date May 20, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deposition window enlargement
- Patent number 12,300,496
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and formation method thereof
- Patent number 12,302,599
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Chiang Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistant contact method and structure
- Patent number 12,300,729
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain contact formation methods and devices
- Patent number 12,300,539
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a FET structure by selective deposition of film o...
- Patent number 12,288,692
- Issue date Apr 29, 2025
- Tokyo Electron Limited
- Yun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal wrap-around contacts for semiconductor devices
- Patent number 12,284,820
- Issue date Apr 22, 2025
- Tokyo Electron Limited
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Different via configurations for different via interface requirements
- Patent number 12,278,188
- Issue date Apr 15, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Che Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an electronic structure using reforming gas, syst...
- Patent number 12,272,548
- Issue date Apr 8, 2025
- ASM IP Holding B.V.
- Shinya Yoshimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective dual silicide formation
- Patent number 12,272,602
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Peng-Wei Chu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
BIPOLAR JUNCTION TRANSISTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20250240990
- Publication date Jul 24, 2025
- UNITED MICROELECTRONICS CORP.
- Hsin-Han Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Different Via Configurations for Different Via Interface Requirements
- Publication number 20250239527
- Publication date Jul 24, 2025
- Taiwan Semiconductor Manufacturing Co., LTD
- Shih-Che Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PEDMOS Transistor Devices
- Publication number 20250241007
- Publication date Jul 24, 2025
- pSemi Corporation
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYER STRUCTURE INCLUDING SILICIDE LAYER, METHOD OF MANUFACTURING T...
- Publication number 20250234628
- Publication date Jul 17, 2025
- Samsung Electronics Co., Ltd.
- Woonghyeon PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact Structures in Semiconductor Devices
- Publication number 20250234602
- Publication date Jul 17, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Cheng HUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR PREVENTING SILICIDE CONTAMINATION DURING T...
- Publication number 20250234542
- Publication date Jul 17, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SOURCE/DRAIN CONTACT FORMED USING BOTTOM-...
- Publication number 20250203976
- Publication date Jun 19, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sung-Li WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20250203996
- Publication date Jun 19, 2025
- RENESAS ELECTRONICS CORPORATION
- Yukio MAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY FIELD EFFECT TRANSISTOR AND RELATED METHODS
- Publication number 20250204037
- Publication date Jun 19, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsien-Chih HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...
- Publication number 20250194201
- Publication date Jun 12, 2025
- Intel Corporation
- Subhash M. JOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20250185293
- Publication date Jun 5, 2025
- Samsung Electronics Co., Ltd.
- Taesun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH SILICIDE FORMATION BLOCKING
- Publication number 20250183039
- Publication date Jun 5, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Brian Ellingwood
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING
- Publication number 20250183040
- Publication date Jun 5, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min-Hsuan LU
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A LOWER INSULATING PATTERN
- Publication number 20250185295
- Publication date Jun 5, 2025
- Samsung Electronics Co., Ltd.
- KI HWAN KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE FORMATION OF ETCH STOP LAYERS AND THE STRUCTURES THEREOF
- Publication number 20250185329
- Publication date Jun 5, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING IMPROVED ELECTROSTATIC DISCHARGE PROTEC...
- Publication number 20250169191
- Publication date May 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250166996
- Publication date May 22, 2025
- Mitsubishi Electric Corporation
- Takuya YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250169136
- Publication date May 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Hsiang SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES WITH MULTIPLE SILICID...
- Publication number 20250159965
- Publication date May 15, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Yip Loh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20250149344
- Publication date May 8, 2025
- UNITED MICROELECTRONICS CORP.
- MING THAI CHAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A FIN AT A S/D REGION AND A SEMICONDUCT...
- Publication number 20250142954
- Publication date May 1, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DIFFUSION METAL OXIDE SEMICONDUCTOR (LDMOS) TRANSISTOR AND...
- Publication number 20250133804
- Publication date Apr 24, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Lianjie LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SOURCE OR DRAIN STRUCTURES FOR ADVANCED INTEGRATED CIRCUI...
- Publication number 20250126869
- Publication date Apr 17, 2025
- Intel Corporation
- Subhash JOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250126874
- Publication date Apr 17, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Ju CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE TREATMENT ENABLING SUPER-CONFORMAL METAL CAP PROFILE ON MID...
- Publication number 20250112091
- Publication date Apr 3, 2025
- Applied Materials, Inc.
- Jianqiu GUO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20250107184
- Publication date Mar 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Yen CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ANNULAR SEMICONDUCTOR FIN AND METHOD FOR...
- Publication number 20250107224
- Publication date Mar 27, 2025
- NANYA TECHNOLOGY CORPORATION
- Te-Yin CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20250107210
- Publication date Mar 27, 2025
- Kabushiki Kaisha Toshiba
- Kanako Komatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20250107150
- Publication date Mar 27, 2025
- Samsung Electronics Co., Ltd.
- Daesik KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ANNULAR SEMICONDUCTOR FIN AND METHOD FOR...
- Publication number 20250107223
- Publication date Mar 27, 2025
- NANYA TECHNOLOGY CORPORATION
- Te-Yin CHEN
- H01 - BASIC ELECTRIC ELEMENTS

the conductive layers comprising silicides

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Epitaxial layers in source/drain contacts and methods of forming th...

Method for depositing a Group IV semiconductor and related semicond...

Semiconductor device and method of manufacturing the same

Inner spacer features for multi-gate transistors

Semiconductor device and manufacturing method thereof

Semiconductor device having a uniform and thin silicide layer on an...

Method of forming source/drain regions with quadrilateral layers

Field effect transistor with contact via structures that are latera...

Gate structure passivating species drive-in method and structure fo...

Method of manufacturing a semiconductor device and a semiconductor...

Semiconductor device structure and methods of forming the same

Semiconductor device and method of manufacturing the same

Field effect transistor with shallow trench isolation features with...

Self-aligned method for vertical recess for 3D device integration

Metal contacts to group IV semiconductors by inserting interfacial...

Low resistance and reduced reactivity approaches for fabricating co...

Void-free contact trench fill in gate-all-around FET architecture

Transistor gate structures and methods of forming the same

Contact structures in semiconductor devices

Structure and method for preventing silicide contamination during t...

Semiconductor devices including backside vias and methods of formin...

Deposition window enlargement

Semiconductor device and formation method thereof

Low resistant contact method and structure

Source/drain contact formation methods and devices

Method of forming a FET structure by selective deposition of film o...

Dual metal wrap-around contacts for semiconductor devices

Different via configurations for different via interface requirements

Method of forming an electronic structure using reforming gas, syst...

Selective dual silicide formation

Patents Applicationslast 30 patents

BIPOLAR JUNCTION TRANSISTOR DEVICE AND FABRICATION METHOD THEREOF

Different Via Configurations for Different Via Interface Requirements

PEDMOS Transistor Devices

LAYER STRUCTURE INCLUDING SILICIDE LAYER, METHOD OF MANUFACTURING T...

Contact Structures in Semiconductor Devices

STRUCTURE AND METHOD FOR PREVENTING SILICIDE CONTAMINATION DURING T...

SEMICONDUCTOR DEVICE WITH SOURCE/DRAIN CONTACT FORMED USING BOTTOM-...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

COMPLEMENTARY FIELD EFFECT TRANSISTOR AND RELATED METHODS

TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...

INTEGRATED CIRCUIT DEVICE

INTEGRATED CIRCUIT WITH SILICIDE FORMATION BLOCKING

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING

SEMICONDUCTOR DEVICE INCLUDING A LOWER INSULATING PATTERN

SELECTIVE FORMATION OF ETCH STOP LAYERS AND THE STRUCTURES THEREOF

SEMICONDUCTOR DEVICE HAVING IMPROVED ELECTROSTATIC DISCHARGE PROTEC...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES WITH MULTIPLE SILICID...

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE HAVING A FIN AT A S/D REGION AND A SEMICONDUCT...

LATERAL DIFFUSION METAL OXIDE SEMICONDUCTOR (LDMOS) TRANSISTOR AND...

EPITAXIAL SOURCE OR DRAIN STRUCTURES FOR ADVANCED INTEGRATED CIRCUI...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SURFACE TREATMENT ENABLING SUPER-CONFORMAL METAL CAP PROFILE ON MID...

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

SEMICONDUCTOR DEVICE WITH ANNULAR SEMICONDUCTOR FIN AND METHOD FOR...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE WITH ANNULAR SEMICONDUCTOR FIN AND METHOD FOR...