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H01L29/66545

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/66545using a dummy

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,191,304
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with disabled channels and method
- Patent number 12,191,371
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Xuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate semiconductor device with inner spacer and fabrication m...
- Patent number 12,191,379
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bone-Fong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,191,144
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Yi Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around transistor with reduced source/drain contact resist...
- Patent number 12,191,151
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jui-Ping Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing off-state leakage in semiconductor devices
- Patent number 12,191,349
- Issue date Jan 7, 2025
- Intel Corporation
- Dipanjan Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained vertical channel semiconductor device, method of manufactu...
- Patent number 12,191,394
- Issue date Jan 7, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with enlarged gate electrode structure and...
- Patent number 12,191,366
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Wen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device with capped air-gap spacer
- Patent number 12,191,373
- Issue date Jan 7, 2025
- Samsung Electronics Co., Ltd.
- Sangkoo Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,191,380
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ssu-Yu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,191,205
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Minghwei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing fin spacers having different heights using...
- Patent number 12,191,206
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar I/O and logic semiconductor devices having different wor...
- Patent number 12,191,207
- Issue date Jan 7, 2025
- Intel Corporation
- Roman W. Olac-Vaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,191,209
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for semiconductor structure having a plurality...
- Patent number 12,191,401
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chia-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor with a gate structure having a dielectr...
- Patent number 12,183,823
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Neng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with silicide gate fill structure
- Patent number 12,183,787
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,183,805
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zhi-Qiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of fabricating the same
- Patent number 12,183,806
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ko-Cheng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 12,183,790
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and method for high pressure anneal
- Patent number 12,183,573
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Szu-Ying Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and methods of formation
- Patent number 12,183,640
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device by driving hydrogen into a...
- Patent number 12,183,581
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hongfa Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of performing gap filling including filling trenches between...
- Patent number 12,183,590
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with air gap on gate structure and method for...
- Patent number 12,183,784
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tien-Lu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing parasitic capacitance for gate-all-around device by formin...
- Patent number 12,183,808
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,183,807
- Issue date Dec 31, 2024
- BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY
- Weixing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside power rail structure and methods of forming same
- Patent number 12,183,678
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained semiconductor FET devices with epitaxial quality improvement
- Patent number 12,176,434
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain feature separation structure
- Patent number 12,178,032
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Chun Keng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VARACTORS HAVING INCREASED TUNING RATIO
- Publication number 20250015159
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Shuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING
- Publication number 20250015166
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Ging Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME
- Publication number 20250015185
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lien HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL STORAGE GATE FINFET FOR NON-VOLATILE MEMORY
- Publication number 20250017001
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Chao Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250015160
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250015162
- Publication date Jan 9, 2025
- Semiconductor Manufacturing International (Shanghai) Corporation
- Yang LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE FIELD EFFECT TRANSISTOR DEVICE
- Publication number 20250015080
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Szu-Wei Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED PATTERNING LAYER FOR METAL GATE FORMATION
- Publication number 20250014947
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kenichi Sano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE DEVICE AND RELATED METHODS
- Publication number 20250015167
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Yi LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, SEMICONDUCTOR CHIP AND MANUFACTURING METHOD T...
- Publication number 20250015079
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH BONDING LAYERS
- Publication number 20250015131
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wan Chen HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20250014995
- Publication date Jan 9, 2025
- Samsung Electronics Co., Ltd.
- Jinwoo LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20250015130
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lung TUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH AIR SPACER AND METHOD FOR FORMING THE...
- Publication number 20250015132
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shi-Sheng Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multigate Device Having Reduced Contact Resistivity
- Publication number 20250015154
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Co., LTD
- Georgios VELLIANITIS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED NANOSHEET FETS WITH GATE DIELECTRIC FILL
- Publication number 20250006736
- Publication date Jan 2, 2025
- International Business Machines Corporation
- Biswanath Senapati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250006811
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME
- Publication number 20250006559
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Siao-Jing Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE-SIDED INTEGRATED CIRCUIT WITH STABILIZING CAGE
- Publication number 20250006590
- Publication date Jan 2, 2025
- International Business Machines Corporation
- Nicholas Alexander POLOMOFF
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20250006500
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ya-Lan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20250006815
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kao-Cheng LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20250006558
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lung Tung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250006827
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH METAL GATE STRUCTURE AND FABRICATION METH...
- Publication number 20250006829
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-I Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FET WITH LOW PARASITIC-CAPACITANCE GATE
- Publication number 20250006786
- Publication date Jan 2, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMIN...
- Publication number 20250006739
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING GATE-ALL-AROUND TFET DEVICE
- Publication number 20250006822
- Publication date Jan 2, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Na Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR AND METHOD OF MANUFACTURING TRANSISTOR
- Publication number 20250006813
- Publication date Jan 2, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Yongliang Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED DEVICE WITH NITROGEN-CONTAINING INTERFACIAL LAYER AND MANUF...
- Publication number 20250006816
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Hsiang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE VERTICAL-STACK NANOSHEET FOR GATE-ALL-AROUND DEVICES
- Publication number 20240429236
- Publication date Dec 26, 2024
- QUALCOMM Incorporated
- Shreesh Narasimha
- H01 - BASIC ELECTRIC ELEMENTS

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Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of manufacturing a semiconductor device and a semiconductor...

Field effect transistor with disabled channels and method

Multi-gate semiconductor device with inner spacer and fabrication m...

Semiconductor device and manufacturing method thereof

Gate-all-around transistor with reduced source/drain contact resist...

Reducing off-state leakage in semiconductor devices

Strained vertical channel semiconductor device, method of manufactu...

Semiconductor structure with enlarged gate electrode structure and...

Method of forming a semiconductor device with capped air-gap spacer

Semiconductor device and method

Semiconductor device and manufacturing method thereof

Method of manufacturing fin spacers having different heights using...

Non-planar I/O and logic semiconductor devices having different wor...

Semiconductor device

Manufacturing method for semiconductor structure having a plurality...

Fin field-effect transistor with a gate structure having a dielectr...

Semiconductor device with silicide gate fill structure

Semiconductor device and manufacturing method thereof

Semiconductor devices and methods of fabricating the same

Semiconductor device structure and methods of forming the same

Device and method for high pressure anneal

Semiconductor device and methods of formation

Method of forming a semiconductor device by driving hydrogen into a...

Method of performing gap filling including filling trenches between...

Semiconductor device with air gap on gate structure and method for...

Reducing parasitic capacitance for gate-all-around device by formin...

Semiconductor device and method for manufacturing the same

Backside power rail structure and methods of forming same

Strained semiconductor FET devices with epitaxial quality improvement

Source/drain feature separation structure

Patents Applicationslast 30 patents

VARACTORS HAVING INCREASED TUNING RATIO

SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING

SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME

NOVEL STORAGE GATE FINFET FOR NON-VOLATILE MEMORY

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE

FIN-TYPE FIELD EFFECT TRANSISTOR DEVICE

SELF-ALIGNED PATTERNING LAYER FOR METAL GATE FORMATION

MULTI-GATE DEVICE AND RELATED METHODS

SEMICONDUCTOR DEVICE, SEMICONDUCTOR CHIP AND MANUFACTURING METHOD T...

SEMICONDUCTOR DEVICES WITH BONDING LAYERS

SEMICONDUCTOR DEVICES

SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR STRUCTURE WITH AIR SPACER AND METHOD FOR FORMING THE...

Multigate Device Having Reduced Contact Resistivity

STACKED NANOSHEET FETS WITH GATE DIELECTRIC FILL

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

GATE ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME

DOUBLE-SIDED INTEGRATED CIRCUIT WITH STABILIZING CAGE

SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE WITH METAL GATE STRUCTURE AND FABRICATION METH...

STACKED FET WITH LOW PARASITIC-CAPACITANCE GATE

COMPLEMENTARY FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMIN...

METHOD FOR MANUFACTURING GATE-ALL-AROUND TFET DEVICE

TRANSISTOR AND METHOD OF MANUFACTURING TRANSISTOR

STACKED DEVICE WITH NITROGEN-CONTAINING INTERFACIAL LAYER AND MANUF...

VARIABLE VERTICAL-STACK NANOSHEET FOR GATE-ALL-AROUND DEVICES