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H01L29/66545

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/66545using a dummy

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Chemical vapor deposition for uniform tungsten growth
- Patent number 12,252,783
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pin-Wen Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Inner filler layer for multi-patterned metal gate for nanostructure...
- Patent number 12,255,100
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a FinFET with merged epitaxial source/drain...
- Patent number 12,255,255
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 12,255,104
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Ching Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 12,255,247
- Issue date Mar 18, 2025
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including backside contact structure having po...
- Patent number 12,255,248
- Issue date Mar 18, 2025
- Samsung Electronics Co., Ltd.
- Wonhyuk Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inner spacer structures for gate-all-around field effect transistors
- Patent number 12,255,249
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming of inner spacer structure using semiconductor ma...
- Patent number 12,255,102
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical fuse (e-fuse) one-time programmable (OTP) device and man...
- Patent number 12,255,133
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Alexander Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical FET replacement gate formation with variable fin pitch
- Patent number 12,255,204
- Issue date Mar 18, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective etching method and semiconductor structure manufactured u...
- Patent number 12,255,074
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuan-Da Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation of nanostructures for nano-FET
- Patent number 12,255,101
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,255,257
- Issue date Mar 18, 2025
- Samsung Electronics Co., Ltd.
- Mongsong Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multigate device structure with engineered cladding and method maki...
- Patent number 12,249,539
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Wen Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanoribbon thick gate devices with differential ribbon spacing and...
- Patent number 12,249,622
- Issue date Mar 11, 2025
- Intel Corporation
- Tanuj Trivedi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Field plate structure for high voltage device
- Patent number 12,249,629
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Cheng Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ternary inverter and method of manufacturing the same
- Patent number 12,249,605
- Issue date Mar 11, 2025
- UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
- Kyung Rok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wet etch apparatus
- Patent number 12,249,520
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hong-Ting Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method of manufacturing the same and electron...
- Patent number 12,249,544
- Issue date Mar 11, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device having doped work function metal layer
- Patent number 12,249,604
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Hsiung Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and methods of forming the same
- Patent number 12,249,650
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device having a gate with a tapering bottom portion and a ga...
- Patent number 12,243,748
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local gate height tuning by CMP and dummy gate design
- Patent number 12,243,782
- Issue date Mar 4, 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING C0., LTD.
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a dummy gate structure
- Patent number 12,243,929
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yan-Ting Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with capacitors
- Patent number 12,243,871
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsiao-Han Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for forming the same
- Patent number 12,243,780
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ching-Wei Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon phosphide semiconductor device
- Patent number 12,243,784
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain feature for multigate device performance and method of...
- Patent number 12,243,912
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Chuan Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal oxidation for gate all around nanosheet I/O device
- Patent number 12,243,941
- Issue date Mar 4, 2025
- Applied Materials, Inc.
- Myungsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Different height cell subregions, semiconductor device having the s...
- Patent number 12,243,914
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jung-Chan Yang
- G06 - COMPUTING CALCULATING COUNTING

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250072077
- Publication date Feb 27, 2025
- United Semiconductor (Xiamen) Co., Ltd.
- Wei-Chun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND METHOD TO REDUCE MG TO SD CAPACITANCE BY AN AIR GAP BETW...
- Publication number 20250072052
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- Chun Yi CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Etch Selectivity Modulation by Fluorocarbon Treatment
- Publication number 20250069896
- Publication date Feb 27, 2025
- TOKYO ELECTRON LIMITED
- Ivo Otto IV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE STRUCTURE WITH EXTRA FIN
- Publication number 20250072038
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Hong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME
- Publication number 20250072040
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi Chen Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Stack for Multigate Device
- Publication number 20250072051
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Wei LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH ISOLATED SOURCE/DRAINS AND METHOD
- Publication number 20250072065
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Hung CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING SEMICONDUCTOR DEVICES
- Publication number 20250072096
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Gi Woong SHIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED RESIDUE AT ETCHED STRUCTURE SIDEWALLS
- Publication number 20250072099
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuei-Yu Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250072100
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Te TU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20250072028
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- MING-TE CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH HYBRID SUBSTRATE AND MANUFACTURING METHOD...
- Publication number 20250072037
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Lun Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Leakage FET
- Publication number 20250072062
- Publication date Feb 27, 2025
- MURATA MANUFACTURING CO., LTD.
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
- Publication number 20250072070
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- Chen An Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20250072078
- Publication date Feb 27, 2025
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING TH...
- Publication number 20250072106
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Jisoo PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250072067
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- SHIH-CHENG CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT GATE FORMATION IN MEMORY
- Publication number 20250072079
- Publication date Feb 27, 2025
- Micron Technology, Inc.
- Thomas M. Graettinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250072080
- Publication date Feb 27, 2025
- UNITED MICROELECTRONICS CORP.
- Chang-Yih Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250072082
- Publication date Feb 27, 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- I-Chih CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SEAL RING STRUCTURE AND METHOD FOR FORMIN...
- Publication number 20250070052
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ke-Gang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FURNACE INNER TUBE FOR PROCESS UNIFORMITY
- Publication number 20250062139
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- De-Wei YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FET WITH BOTTOM EPI SIZE CONTROL AND WRAPAROUND BACKSIDE CO...
- Publication number 20250062190
- Publication date Feb 20, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20250063749
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Lun LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING GATE STRUCTURE
- Publication number 20250063759
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250063790
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250063808
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- KUAN-TING PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250063781
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Shiang HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL TRAPPED METAL CONTACT FOR STACKED FET
- Publication number 20250063795
- Publication date Feb 20, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE IN SEMICONDUCTOR METHOD AND METHOD OF FORMING THE SAME
- Publication number 20250063778
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS

using a dummy

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Chemical vapor deposition for uniform tungsten growth

Inner filler layer for multi-patterned metal gate for nanostructure...

Method of manufacturing a FinFET with merged epitaxial source/drain...

Semiconductor device and method of manufacture

Trench contact structures for advanced integrated circuit structure...

Semiconductor device including backside contact structure having po...

Inner spacer structures for gate-all-around field effect transistors

Methods of forming of inner spacer structure using semiconductor ma...

Electrical fuse (e-fuse) one-time programmable (OTP) device and man...

Vertical FET replacement gate formation with variable fin pitch

Selective etching method and semiconductor structure manufactured u...

Ion implantation of nanostructures for nano-FET

Semiconductor device

Multigate device structure with engineered cladding and method maki...

Nanoribbon thick gate devices with differential ribbon spacing and...

Field plate structure for high voltage device

Ternary inverter and method of manufacturing the same

Wet etch apparatus

Semiconductor device, method of manufacturing the same and electron...

Semiconductor device having doped work function metal layer

FinFET device and methods of forming the same

FinFET device having a gate with a tapering bottom portion and a ga...

Local gate height tuning by CMP and dummy gate design

Forming a dummy gate structure

Integrated circuits with capacitors

Semiconductor device structure and method for forming the same

Silicon phosphide semiconductor device

Source/drain feature for multigate device performance and method of...

Conformal oxidation for gate all around nanosheet I/O device

Different height cell subregions, semiconductor device having the s...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

DEVICE AND METHOD TO REDUCE MG TO SD CAPACITANCE BY AN AIR GAP BETW...

Etch Selectivity Modulation by Fluorocarbon Treatment

FINFET DEVICE STRUCTURE WITH EXTRA FIN

SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME

Gate Stack for Multigate Device

FIELD EFFECT TRANSISTOR WITH ISOLATED SOURCE/DRAINS AND METHOD

METHODS OF FABRICATING SEMICONDUCTOR DEVICES

REDUCED RESIDUE AT ETCHED STRUCTURE SIDEWALLS

SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME

SEMICONDUCTOR DEVICE WITH HYBRID SUBSTRATE AND MANUFACTURING METHOD...

Low Leakage FET

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING TH...

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

REPLACEMENT GATE FORMATION IN MEMORY

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE WITH SEAL RING STRUCTURE AND METHOD FOR FORMIN...

FURNACE INNER TUBE FOR PROCESS UNIFORMITY

STACKED FET WITH BOTTOM EPI SIZE CONTROL AND WRAPAROUND BACKSIDE CO...

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

METHOD OF FORMING GATE STRUCTURE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

LOCAL TRAPPED METAL CONTACT FOR STACKED FET

GATE STRUCTURE IN SEMICONDUCTOR METHOD AND METHOD OF FORMING THE SAME