Claims
- 1. A method of forming a minute pattern using a positive chemically amplifying type resist, comprising the steps of:
- preparing a positive chemically amplifying type resist including a base resin, a dissolution inhibitor for inhibiting dissolution of the base resin in a developer, and a catalyst generating agent which generates a catalyst for destroying the dissolution inhibiting capability of the dissolution inhibitor upon irradiation with light;
- forming a resist film on a substrate by applying the positive chemically amplifying resist on the substrate and drying the same;
- selectively irradiating said resist film with light;
- after said irradiation, heating said resist film;
- after said irradiation, applying an electric field to said resist film; and
- developing the resist film to remove irradiated portions of the resist film, the developing step being effected subsequent to the electric field application.
- 2. A method according to claim 1, wherein the substrate is a silicon substrate.
- 3. A method according to claim 1, wherein
- the direction of application of the electric field to said resist film is vertical to said resist film.
- 4. A method according to claim 1, wherein
- the step of heating the resist film and the step of applying an electric field to the resist film are carried out simultaneously.
- 5. A method according to claim 1, wherein
- said step of applying an electric field to the resist film is carried out in vacuum.
- 6. A method according to claim 1, wherein said light comprises a KrF excimer laser beam.
- 7. A method according to claim 1, wherein said step of applying an electric field to the resist film is carried out prior to the step of heating the resist film.
Priority Claims (1)
Number |
Date |
Country |
Kind |
1-300529 |
Nov 1989 |
JPX |
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Parent Case Info
This application is a division of application Ser. No. 07/501,568 filed Mar. 30, 1990, now U.S. Pat. No. 5,158,861.
US Referenced Citations (4)
Number |
Name |
Date |
Kind |
RE31220 |
Ernsberger |
Apr 1983 |
|
4996123 |
Nomura et al. |
Feb 1991 |
|
5004667 |
Arahara et al. |
Apr 1991 |
|
5158861 |
Tokui et al. |
Oct 1992 |
|
Foreign Referenced Citations (2)
Number |
Date |
Country |
63-3417 |
Jan 1988 |
JPX |
63-288017 |
Nov 1988 |
JPX |
Non-Patent Literature Citations (1)
Entry |
Blum et al., "A study of the Effect of Key Processing Variables on the Lithographic Performance of Microposit SAL601-ER7 Resist," J. Vac. Sci. Technol. B 6(6), Nov./Dec. 1988, pp. 2280-2285. |
Divisions (1)
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Number |
Date |
Country |
Parent |
501568 |
Mar 1990 |
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