Claims
- 1. A method of forming a partial reverse active mask, wherein the method is applied by a computer simulation, comprising:
providing a mask pattern, comprising a large active region pattern with an original dimension and a small active region pattern; shrinking the large active region pattern and the small active region pattern until the small active region pattern disappears; after the shrinking step, enlarging the large active region pattern to a dimension slightly smaller than the original dimension; and using the enlarged large active region pattern to design a mask.
- 2. The method according to claim 1, wherein the large active region pattern and the small active region pattern are shrunk with a distance of about 0.5 μm to 2.0 μm on each side.
- 3. The method according to claim 1, wherein the large active region pattern is enlarged with a dimension smaller than the shrinking distance.
- 4. A method of forming a partial reverse active mask, comprising:
providing a substrate, and forming therein a plurality of active regions and a plurality of openings; forming an insulating layer over the substrate, wherein a portion of the insulating layer on the active regions has a pyramidical profile; patterning the insulating layer using a partial reverse active mask to expose central parts of the active regions; removing the exposed insulating layer; and planarizing the remaining insulating layer to have the same surface of the openings.
- 5. The method according to claim 4, wherein the partial revere active mask is formed by a computer by steps of:
providing a mask pattern, comprising patterns of the active regions, wherein the patterns further includes a large active region pattern with an original dimension of the active regions and a small active region pattern; shrinking the large active region pattern and the small active region pattern until the small active region patter disappears; and after the shrinking step, enlarging the large active region pattern to a dimension slightly smaller than the original dimension.
- 6. The method according to claim 5, wherein the large active pattern and the small active region are shrunk with a distance of about 0.5 μm to 2.0 μm on each side.
- 7. The method according to claim 5, wherein the large active region pattern is enlarged with a dimension smaller than the shrinking distance.
- 8. The method according to claim 4, wherein the insulating layer includes an oxide layer.
- 9. The method of claim 8, wherein the oxide layer is formed by high density plasma chemical vapor deposition (HDPCVD).
Priority Claims (1)
Number |
Date |
Country |
Kind |
87105966 |
Apr 1998 |
TW |
|
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application claims priority benefit of Taiwan application Serial no. 87105966, filed Apr. 18, 1998, the full disclosure of which is incorporated herein by reference.
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
09075618 |
May 1998 |
US |
Child |
09933923 |
Aug 2001 |
US |