Claims
- 1. A method of manufacturing an interconnection structure for a semiconductor device, comprising the steps of:
- forming a first interconnection layer comprising upper and lower conductive layers, one on top of the other;
- forming an insulating layer on said first interconnection layer;
- forming a through-hole extending completely through said insulating layer and into but not through said upper conductive layer by selectively removing said insulating layer, and
- said upper conductive layer; and
- forming a second interconnection layer on said insulating layer, said second interconnection layer extending through said through-hole so as to be in contact with a surface of said upper conductive layer.
- 2. The manufacturing method of an interconnection structure for a semiconductor device according to claim 1, wherein said step forming the trough-hole includes the step of removing said upper conductive layer by anisotropic etching.
- 3. The manufacturing method of an interconnection structure for a semiconductor device according to claim 2, wherein said step forming the trough-hole includes the step of controlling time of said anisotropic etching.
- 4. The manufacturing method of an interconnection structure for a semiconductor device according to claim 2, wherein said step forming the through-hole includes the step of using a gas of at least one selected from a group consisting of SF.sub.6, SiCl.sub.4, Cl.sub.2 and CF.sub.4 as an etching gas.
Priority Claims (1)
Number |
Date |
Country |
Kind |
3-73206 |
Apr 1991 |
JPX |
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Parent Case Info
This application is a division of application Ser. No. 08/274,379 filed Jul. 13, 1994, now U.S. Pat. No. 5,442,238, which is a continuation of application Ser. No. 07/858,997 filed on Mar. 30, 1992, now abandoned.
US Referenced Citations (7)
Foreign Referenced Citations (1)
Number |
Date |
Country |
64-80065 |
Mar 1989 |
JPX |
Non-Patent Literature Citations (1)
Entry |
Wolf, Silicon Processing for the VLSI Era vol. 1 (1986) Lattice Press pp. 546, 558, 579. |
Divisions (1)
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Number |
Date |
Country |
Parent |
274379 |
Jul 1994 |
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Continuations (1)
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Number |
Date |
Country |
Parent |
858997 |
Mar 1992 |
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