Claims
- 1. A process for forming an integrated circuit capacitor comprising the steps of:
- providing a substrate;
- firstly forming a generally elongate bottom electrode overlying said substrate;
- firstly overlaying said generally elongate bottom electrode with a generally coextensive dielectric layer;
- secondly forming a plurality of top electrodes on said dielectric layer;
- secondly overlaying an insulating layer on said dielectric layer substantially surrounding said plurality of top electrodes, said insulating layer having apertures therethrough overlying said top electrodes; and
- contacting said bottom electrode with a first conductive layer and a multiplicity of said plurality of said top electrodes with a second conductive layer respectively.
- 2. The process of claim 1 wherein said step of contacting is carried out by the deposition of aluminum.
- 3. The process of claim 1 wherein said step of firstly forming comprises the steps of:
- depositing a layer of electrode material on said substrate;
- placing photoresist on said layer of electrode material;
- patterning said photoresist to define said generally elongate bottom electrode;
- setting said patterned photoresist;
- removing said electrode material surrounding said patterned photoresist; and
- stripping away said patterned photoresist.
- 4. The process of claim 3 wherein said step of depositing is carried out by means of platinum.
- 5. The process of claim 3 wherein said step of patterning is carried out by defining a substantially linear element.
- 6. The process of claim 5 wherein said step of patterning is further carried out by defining at least one additional bottom electrode segment contiguous to said substantially linear element.
- 7. The process of claim 1 wherein said step of firstly overlaying is carried out by means of a ferroelectric.
- 8. The process of claim 1 wherein said step of secondly forming comprises the steps of:
- depositing a layer of electrode material on said dielectric layer;
- placing photoresist on said first layer of electrode material;
- patterning said photoresist to define said plurality of top electrodes;
- setting said patterned photoresist;
- removing said electrode material surrounding said patterned photoresist; and
- stripping away said patterned photoresist.
- 9. The process of claim 8 wherein said step of depositing is carried out by means of platinum.
- 10. The process of claim 8 wherein said step of patterning is carried out by defining a plurality of spaced apart, substantially rectangular elements.
- 11. The process of claim 1 wherein said step of secondly overlaying is carried out by producing a silicon dioxide layer on top of said dielectric layer and said top electrodes.
- 12. The process of claim 1 wherein said step of contacting comprises the steps of:
- placing photoresist on said insulating layer;
- patterning said photoresist generally surrounding said plurality of top electrodes;
- setting said patterned photoresist;
- removing said insulating layer overlying said top electrodes;
- stripping away said patterned photoresist; and
- depositing said second conductive layer overlying said insulating layer and contacting said plurality of top electrodes.
- 13. The process of claim 12 wherein said step of depositing is carried out by means of platinum.
Parent Case Info
This is a continuation of application Ser. No. 08/525,497, filed on Sep. 8, 1995, which is a continuation of 08/194,706 (now abandoned), filed on Feb. 10, 1994.
US Referenced Citations (17)
Non-Patent Literature Citations (3)
Entry |
Ramtron Corporation, R2 92490, Ramtron Brochure, RTx 0801 Ramtag.TM., 256-Bit Passive Nonvolatile RF/ID Tag Engineering Prototype, 1990, pp. 1-6. |
Ramtron International Corporation, Ramtron Brochure, FM1208S Fram.RTM. Memory, 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification, R3 Aug., 1993, pp. 1-8. |
Ramtron International Corporation, Ramtron Brochure, Fram.RTM. Technology, R7 020993, pp. 1-2, 1993. |
Continuations (2)
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Number |
Date |
Country |
Parent |
525497 |
Sep 1995 |
|
Parent |
194706 |
Feb 1994 |
|