Number | Date | Country | Kind |
---|---|---|---|
55-103341 | Jul 1980 | JPX | |
55-175292 | Dec 1980 | JPX | |
55-175293 | Dec 1980 | JPX | |
56-31602 | Mar 1981 | JPX |
This is a continuation of application Ser. No. 285,507, filed July 21, 1981, abandoned.
Number | Name | Date | Kind |
---|---|---|---|
3892608 | Kuhn | Mar 1975 | |
3979237 | Morcom et al. | Sep 1976 | |
4026736 | Lesk | May 1977 | |
4233091 | Kawabe | Nov 1980 | |
4255207 | Nicolay et al. | Mar 1981 | |
4255209 | Morcom et al. | Mar 1981 | |
4260436 | Taylor | Apr 1981 | |
4269636 | Rivoli et al. | May 1981 | |
4286374 | Hantusch | Sep 1981 | |
4369565 | Muramatsu | Jan 1983 | |
4409609 | Fukuda | Oct 1983 | |
4420874 | Funatsu | Dec 1983 |
Entry |
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Lillja et al., Process for Fabrication of Shallow and Deep Silicon Dioxide Filled Trenches: IBM Technical Disclosure Bulletin, vol. 22, No. 11, Apr. 1980. |
"VIP for Bipolars: Dielectric Isolation," Electronics, vol. 45, Jul. 3, 11972, pp. 39 and 41. |
R. C. Henderson et al., "Issues in Fabricating Electron Devices with Submicrometer Dimensions," J. Vac. Sci. Technol., vol. 16(2), Mar./Apr. 1979, pp. 260-268. |
Number | Date | Country | |
---|---|---|---|
Parent | 285507 | Jul 1981 |