Claims
- 1. A method of producing a semiconductor device, comprising of providing a semiconductor body; arranging a first continuous oxide layer on a surface of the semiconductor body; producing holes in said first oxide layer; applying diffusion zones and auxiliary diffusion zones in the semiconductor body through the holes by a diffusion process; coating the holes with a second oxide layer which is thinner than said first oxide layer in a diffusion process; forming contact openings in a part of the holes in the second oxide layer; applying a metallization so that at least one diffusion zone contacts with the metallization through the contact openings, so that holes with the auxiliary diffusion zone are arranged under a part of the metallization and a waviness of the metallization is thereby obtained by the auxiliary diffusion zones while the auxiliary diffusion zones do not perform electrical functions during an operation of the semiconductor device.
- 2. A method as defined in claim 1, wherein the auxiliary diffusion zone is formed by a base diffusion zone.
- 3. A method as defined in claim 2, wherein said semiconductor body includes an isolation diffusion zone, said auxiliary diffusion zone is arranged in said insulation diffusion zone.
- 4. A method as defined in claim 1, wherein said auxiliary diffusion zone is an emitter diffusion zone.
- 5. A method as defined in claim 1, wherein said semiconductor body has a collector diffusion zone, said auxiliary diffusion zone is arranged in said collector diffusion zone.
Priority Claims (1)
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3443771 |
Nov 1984 |
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CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a continuation-in-part of patent application Ser. No. 691,067 on Apr. 24, 1991, now abandoned which is continuation of patent application Ser. No. 282,931 filed on Dec. 7, 1988 which is a continuation of patent application Ser. No. 120,212 filed on Nov. 6, 1987, now abandoned which is a continuation of patent application Ser. No. 857,742 filed on Mar. 11, 1986, now U.S. Pat. No. 5,205,243.
US Referenced Citations (4)
Continuations (3)
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282931 |
Dec 1988 |
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120212 |
Nov 1987 |
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857742 |
Mar 1986 |
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Continuation in Parts (1)
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691067 |
Apr 1991 |
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