Tsai, C., Summary Abstract: Metal-Amorphous Si Interfaces: Structural and Electrical Properties J. Vac. Sci. Tech. A1(2), Apr.-Jun. 1983, pp. 785-786. |
Goldstein, B., Growth of Thin Platinum Films on Hydrogenated Amorphous Silicon and Its Oxide J. Vac. Sci. Tech., vol. 17, No. 3, May/Jun. 1980, pp. 718-720. |
Maenpaa, M., Contact Resistivities between Solar-Cell-Type Si and Transition Metal Nitrides Aug. 1981, IEEE Conference, pp. 518-521. |
Ovadyahu, Z., A Transparent-Conducting Coating for a-Si:H Based Devices Amer. Instit. of Physics, 1981, pp. 5865-5866. |
Sasano, A., Semitransparent Metal-Si Electrodes for a-Si:H Photodiodes and Their Application to a Contact-Type Linear Sensor Array, Extend. Abst. of the 16th Conf. on Solid State Devices and Materials, Kobe, 1984, pp. 555-558. |
Seki, K., Semitransparent Silicide Electrodes Utilizing Interaction Between Hydrogenated Amorphous Silicon and Metals, Appl. Phys. Lett. 44(7), Apr. 1984, pp. 682-683. |
Anderson, J., Nickel Contacts for Low Cost Solar Cells, May 1980, IEEE Conference, pp. 948-951. |
Han, M., Influence of Thin Metal as a Top Electrode on the Characteristics of P-I-N a-Si:H Solar Cells, J. Appl. Phys. 52(4), Apr. 1981, pp. 3073-3075. |
Matz, R., Chemical Reaction and Silicide Formation at the Pt/Si Interface, J. Vac. Sci. Tech. A2(2), Apr.-Jun. 1984. |