Claims
- 1. A semiconductor device comprising a semiconductor body with a semiconductor element and a surface on which is present a capacitor with a lower electrode, an oxidic ferroelectric dielectric, and an upper electrode which does not cover any portion of an edge of the oxidic ferroelectric dielectric, an insulating layer with superimposed metal conductor tracks being provided on the semiconductor body, characterized in that a coating layer which is substantially imperviable to hydrogen is provided at the entire area of said edge, said coating layer comprising a hydrogen-absorbing layer which comprises palladium.
- 2. A semiconductor device as claimed in claim 1, characterized in that the coating layer is provided over substantially the entire upper electrode.
- 3. A semiconductor device as claimed in claim 1, characterized in that an insulating auxiliary layer is provided between the hydrogen-absorbing layer and the surface of the semiconductor body.
- 4. A semiconductor device as claimed in claim 3, characterized in that a silicon nitride layer is provided as the auxiliary layer by means of a plasma enhanced deposition process from the gas phase.
Priority Claims (1)
Number |
Date |
Country |
Kind |
91201104 |
May 1991 |
EPX |
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Parent Case Info
This is a continuation of application Ser. No. 08/879,636, filed May 7, 1992, abandoned.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
5214300 |
Rohrer et al. |
May 1993 |
|
Foreign Referenced Citations (3)
Number |
Date |
Country |
0448151 |
Sep 1991 |
EPX |
2184079 |
Jul 1990 |
JPX |
2-254748 |
Oct 1990 |
JPX |
Non-Patent Literature Citations (2)
Entry |
S. M. Sze, Semiconductor Devices Physics and Technology, John Wiley & Sons, New York (1985) p. 362. |
S. Wolf, "Silicon Processing for the VLSI Era", vol. 1: Process Technology, p. 193. |
Continuations (1)
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Number |
Date |
Country |
Parent |
879636 |
May 1992 |
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