Claims
- 1. A method of manufacturing a semiconductor device comprising the steps of:
- forming an impurity region on a main surface of a semiconductor substrate,
- forming an interlayer insulation film on the main surface of the semiconductor substrate to cover said impurity region,
- forming a contact hole in said interlayer insulation film reaching said impurity region,
- forming a buried conductive layer, filling said contact hole, in contact with said impurity region, and having a top face lower in level than a top face of said interlayer insulation film,
- forming a lower electrode layer on said interlayer insulation film to come into contact with said buried conductive layer,
- forming a first sidewall spacer at an edge face portion of said lower electrode layer, from a top face corner of said lower electrode layer to the top face of said interlayer insulation film,
- forming a second sidewall spacer on said lower electrode layer in a recess portion defined by a sidewall of said contact hole and said buried conductive layer, from a top face corner of said lower electrode layer formed on said interlayer insulation film to said lower electrode layer formed on said buried conductive layer,
- forming a high dielectric film of a high dielectric constant material to cover said lower electrode layer, and said first and second sidewall spacers, and
- forming an upper electrode layer to cover said high dielectric film.
- 2. The method of manufacturing a semiconductor device according to claim 1, wherein said step of forming said first and second sidewall spacers comprise the steps of
- forming a silicon oxide film of 800-1200.ANG. to cover said lower electrode layer, and
- dry etching said silicon oxide film anisotropically.
Priority Claims (1)
Number |
Date |
Country |
Kind |
5-152364 |
Jun 1993 |
JPX |
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Parent Case Info
This application is a division of application Ser. No. 08/255,854 filed Jun. 7, 1994, U.S. Pat. No. 5,442,213.
US Referenced Citations (7)
Foreign Referenced Citations (3)
Number |
Date |
Country |
3-256358 |
Nov 1991 |
JPX |
4-63471 |
Feb 1992 |
JPX |
4-99057 |
Mar 1992 |
JPX |
Divisions (1)
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Number |
Date |
Country |
Parent |
255854 |
Jun 1994 |
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