A method for manufacturing a semiconductor device includes forming an insulation film over a semiconductor substrate having a conduction layer; forming a trench pattern over the insulation film; etching an upper portion of the insulation film by using the trench pattern as a mask to form a trench; removing the trench pattern; forming a spacer film over the insulation film having the trench; etching the space film to form a spacer by using a blanket etching process, the spacer remaining over an edge of an inner portion of the trench; etching the insulation film to form a via hole by using as a mask the spacer; completely removing the spacer; forming a barrier film over sidewalls of the trench and the via hole; and forming a metal line with which fills inner portions of the trench and the via hole.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
Example FIGS. 1 to 5 are cross sectional views illustrating a method for manufacturing a semiconductor device through a sequence of manufacturing processes.
Claims
1. A method of manufacturing a semiconductor device comprising:
forming an insulation film over a semiconductor substrate;forming a trench in the insulation film;forming a spacer film over the insulation film and the trench;selectively etching the spacer film to form a via mask pattern in the trench; andetching a via in the insulation film using the via mask pattern as an etch mask.
2. The method of claim 1, wherein the semiconductor substrate comprises a conductive layer.
3. The method of claim 1, wherein the trench is formed using a photoresist trench pattern as an etch mask.
4. The method of claim 1, wherein the etching the spacer film comprises using a blanket etching process.
5. The method of claim 1, comprising substantially removing all of the spacer film after etching the via hole.
6. The method of claim 5, wherein said substantially removing all of the spacer film comprises using H3PO4 to substantially remove all of the spacer film.
7. The method of claim 1, comprising forming a barrier film over sidewalls of the trench and the via hole.
8. The method of claim 7, comprising depositing conductive material over the barrier film in the via hole and the trench.
9. The method of claim 1, wherein the spacer film comprises at least one of silicon oxide and silicon nitride.
10. A semiconductor device comprising:
an insulation film formed over a semiconductor substrate;a trench formed in the insulation film; anda via formed in the trench, wherein the via is formed by forming a spacer film over the insulation film and the trench, selectively etching the spacer film to form a via mask pattern in the trench, and etching a via in the insulation film using the via mask pattern as an etch mask.
11. The semiconductor device of claim 10, wherein the semiconductor substrate comprises a conductive layer.
12. The semiconductor device of claim 10, wherein the trench is formed using a photoresist trench pattern as an etch mask.
13. The semiconductor device of claim 10, wherein the etching the spacer film comprises using a blanket etching process.
14. The semiconductor device of claim 10, wherein the via is formed by substantially removing all of the spacer film after etching the via hole.
15. The semiconductor device of claim 14, wherein said substantially removing all of the spacer film comprises using H3PO4 to substantially remove all of the spacer film.
16. The semiconductor device of claim 10, comprising a barrier film formed over sidewalls of the trench and the via hole.
17. The semiconductor device of claim 16, comprising conductive material deposited over the barrier film in the via hole and the trench.
18. The semiconductor device of claim 10, wherein the spacer film comprises at least one of silicon oxide and silicon nitride.
Patent Application
20070145517
