Claims
- 1. A method of manufacturing a semiconductor device comprising a semiconductor body having at a surface at least one circuit element with at least two conductive regions, the surface being coated with an insulating layer on which a conductor track is formed which interconnects the conductive regions through contact windows in the insulating layer and which is recessed into the insulating layer over at least substantially its entire thickness, characterized in that, after the conductive regions have been provided, the insulating layer is formed over a first part of its thickness, in that an etching stopper layer of a conductive material from which a conductive part of said device is also formed and which has a lower etching rate for an etchant than that of the insulating layer is formed on the first part in an intermediate region situated between the conductive regions, and in that subsequently the insulating layer is provided over a second part of its thickness, and the insulating layer is subjected to an etching treatment with said etchant at the area of the conductor track to be formed, during which the insulating layer is removed in said intermediate region down to the etching stopper layer and at the area of the contact windows down to the conductive regions, after which the resulting structure is covered with a conductive layer, from which the recessed conductor track is formed by etching back the conductive layer.
- 2. A method as claimed in claim 1, characterized in that the etching treatment for removing the insulating layer in the intermediate region and at the areas of the contact windows is carried out anisotropically.
Priority Claims (1)
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9100094 |
Jan 1991 |
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Parent Case Info
This is a division of application Ser. No. 08/225,403, filed Apr. 8, 1994, now U.S. Pat. No. 5,396,092, which is a continuation of application Ser. No. 08/083,867, filed Jun. 28, 1993, which is a continuation of application Ser. No. 07/821,212, filed Jan. 16, 1992, both abandoned.
US Referenced Citations (4)
Divisions (1)
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Date |
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225403 |
Apr 1994 |
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Continuations (2)
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83867 |
Jun 1993 |
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Parent |
821212 |
Jan 1992 |
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