Patent Application
20230280662
This application claims priority of EP application 20196358.4 which was filed on Sep. 16, 2020 and EP application 21191255.5 which was filed on Aug. 13, 2021 which are incorporated herein in its entirety by reference.
The present invention relates to performing metrology on layers comprising two-dimensional material.
There is considerable interest in using two-dimensional materials to form device structures such as circuit elements as part of semiconductor manufacturing processes. Various deposition techniques exist for fabricating two-dimensional materials. Such deposition techniques include chemical vapor deposition (CVD) and atomic layer deposition (ALD). For quality and/or process control during manufacture of device structures, it is important to be able to assess the quality of deposited two-dimensional material and/or structures or patterns formed from the two-dimensional material. It has proven difficult to achieve this with an optimal balance of precision and speed.
It is an object of embodiments of the present disclosure to improve assessment of two-dimensional materials.
According to an aspect of the invention, there is provided a method of performing metrology, comprising: providing a substrate having a layer formed on the substrate, the layer comprising a two-dimensional material; illuminating a target portion of the layer with a beam of radiation and detecting a distribution of radiation in a pupil plane, the radiation redirected by the target portion of the layer, to obtain measurement data; and processing the measurement data to obtain metrology information about the target portion of the layer, wherein: the illuminating, detecting and processing are performed for plural different target portions of the layer to obtain metrology information for the plural target portions of the layer.
A non-destructive method is thus provided that allows metrology information about a two-dimensional material to be obtained quickly and efficiently over a large area. The approach can conveniently be implemented using optical apparatus similar to that used for performing conventional metrology processes in the context of semiconductor lithography. Using a detected distribution of radiation in a pupil plane (rather than in an image plane) has been found to be highly sensitive to small signals and can extract information about defects such as grain boundaries even where a large background signal is present, as may be the case for example in the context of bright field imaging.
In an embodiment, the processing of the measurement data uses a machine learning model to obtain the metrology information from the detected distribution of radiation in the pupil plane. The use of machine learning makes it possible to obtain detailed information from measurement data without having to perform additional measurements such as those used to train the machine learning model, which may be relatively expensive and/or slow.
According to an aspect of the invention, there is provided a method of training a machine learning model, comprising: providing a substrate having a layer formed on the substrate, the layer comprising a two-dimensional material; obtaining a training dataset by performing a first measurement process on a target portion of the layer for multiple different target portions of the layer; and using the obtained training dataset to train the machine learning model such that the trained machine learning model is capable of deriving metrology information about a new target portion of a layer comprising a two-dimensional material from measurement data obtained by performing the first measurement process on the new target portion.
In an embodiment, a training dataset for training a machine learning model is obtained by performing first and second measurement processes. In an embodiment, the first measurement process comprises detecting an image in a bright field imaging mode, and the second measurement process comprising detecting an image in a dark field imaging mode. The inventors have found dark field imaging to be particularly sensitive to defects of interest, such as grain boundaries. In dark field imaging, if no grain boundary or defect is present the ideal flat crystal should mostly appear dark (with only the edges scattering light). A discontinuity of any kind (e.g. surface defect, grain boundary, surface topology) will act as a scattering site and thereby contribute to a detectable signal. Grain boundaries are of particular interest because they are expected to decrease performance of devices formed from two-dimensional materials. Grain boundaries represent imperfections in the crystal structure and therefore contribute to scattering of charge carriers. Scattering of charge carriers dissipates energy and/or reduces charge carrier mobility, both of which are typically detrimental to device performance. Bright field imaging has advantages in terms of increased acquisition speed, smaller spot size and/or additional or alternative filtering options (e.g. based on polarization). Using a combination of bright field and dark field imaging to train a machine learning model makes it possible to exploit advantages of both techniques.
In an embodiment, the layer comprising the two-dimensional material used to obtain the training dataset is supported on a non-planar support surface, a surface topography of the non-planar support surface being configured to provide a predetermined defect distribution in the layer. Alternatively or additionally, the layer comprising the two-dimensional material used to obtain the training dataset is supported on a support surface having a non-uniform composition, a spatial variation of the composition in the support surface being configured to provide a predetermined defect distribution in the layer. This approach can ensure that the training dataset trains the machine learning model effectively over a desired range of defect distributions without the training set having to be excessively large. Furthermore, by controlling the defect distribution in this manner it is possible to avoid or reduce the need for separate calibration measurements of the defect distribution to provide labels for the machine learning process, thereby improving efficiency. Thus, where the machine learning model is a supervised machine learning model the predetermined defect distribution can be used directly to provide labels for measurement data from the first measurement process in the training dataset.
According to an aspect of the invention, there is provided a metrology apparatus configured to perform metrology on a substrate, the apparatus comprising: a measurement system configured to illuminate a target portion of a layer of two-dimensional material on a substrate and to detect a distribution of radiation in a pupil plane, the radiation redirected by the target portion, to obtain measurement data; and a data processing system configured to: control the measurement system to obtain the measurement data for plural different target portions; and use a machine learning model to obtain metrology information for the target portions from the respective detected distributions of radiation in the pupil plane.
According to an aspect of the invention, there is provided a metrology apparatus configured to train a machine learning model, the apparatus comprising: a measurement system configured to perform a first measurement process and a second measurement process on a target portion of a layer of two-dimensional material for multiple different target portions of the layer; and a data processing system configured to use a training dataset derived from the first measurement process and the second measurement process to train a machine learning model such that the machine learning model is capable of deriving metrology information about a new target portion of a layer comprising a two-dimensional material from measurement data obtained by performing the first measurement process on the new target portion.
According to an aspect of the invention, there is provided a method of performing metrology, comprising: providing a substrate having a layer formed on the substrate, the layer comprising a two-dimensional material; illuminating a target portion of the layer with an incoherent beam of radiation and detecting radiation redirected by the target portion of the layer to obtain measurement data; and processing the measurement data to obtain metrology information about the target portion of the layer, wherein: the illuminating, detecting and processing are performed for plural different target portions of the layer to obtain metrology information for the plural target portions of the layer.
A non-destructive method is thus provided that allows metrology information about a two-dimensional material to be obtained quickly and efficiently over a large area. The use of incoherent radiation allows the technique to be implemented at low cost and high speed. The approach can also conveniently be implemented using optical apparatus similar to that used for performing conventional metrology processes in the context of semiconductor lithography.
In an embodiment, the measurement data comprises data derived from a detected image formed in a dark field imaging mode. The inventors have found dark field imaging to be particularly sensitive to defects of interest, such as grain boundaries. In dark field imaging, if no grain boundary or defect is present the ideal flat crystal should mostly appear dark (with only the edges scattering light). A discontinuity of any kind (e.g. surface defect, grain boundary, surface topology) will act as a scattering site and thereby contribute to a detectable signal. Grain boundaries are of particular interest because they are expected to decrease performance of devices formed from two-dimensional materials. Grain boundaries represent imperfections in the crystal structure and therefore contribute to scattering of charge carriers. Scattering of charge carriers dissipates energy and/or reduces charge carrier mobility, both of which are typically detrimental to device performance.
In an embodiment, the measurement data comprises data derived from a detected distribution of radiation in a pupil plane. This detection mode has been found to be highly sensitive to small signals and can extract information about defects such as grain boundaries even with the large background signal expected in bright field imaging.
According to an aspect of the invention, there is provided a method of performing metrology, comprising: providing a substrate having a layer formed on the substrate, the layer comprising a two-dimensional material; performing dark field holographic microscopy on a target portion of the layer to obtain measurement data; and processing the measurement data to obtain metrology information about the target portion of the layer, wherein: the dark field holographic microscopy and processing are performed for plural different target portions of the layer to obtain metrology information for the plural target portions of the layer.
A method is thus provided that allows metrology information about a two-dimensional material to be obtained with high sensitivity and high speed. The benefits of dark field imaging discussed above are combined with the ability of holographic microscopy to distinguish phase information to provide high sensitivity and accuracy.
In an embodiment, at least a majority of the plural target portions are positioned within a distance from a radial periphery of the substrate nearest to the target portion that is less than 20% of an average separation between the radial periphery and a center of mass of the substrate. Providing target portions preferentially towards the radial periphery of the substrate ensures that the target portions sample available information about the spatial distribution of defects efficiently, particularly in the case where the defects of interest are grain boundaries.
In an embodiment, the target portions vary in size and/or shape as a function of position on the substrate. The variation in size and/or shape may, for example, be selected to take account of an expected defect distribution in the layer. This may facilitate finding of an optimum balance between quality and speed of the measurement process being used.
According to an aspect of the invention, there is provided a method of training a machine learning model, comprising: providing a substrate having a layer formed on the substrate, the layer comprising a two-dimensional material; performing a first measurement process on a target portion of the layer to obtain first measurement data; and performing a second measurement process on the target portion of the layer to obtain second measurement data, wherein: the first and second measurement processes are performed for multiple different target portions of the layer to obtain a training dataset; and using the obtained training dataset to train a machine learning model such that the trained machine learning model is capable of deriving metrology information about a new target portion of a layer comprising a two-dimensional material from measurement data obtained by performing the first measurement process on the new target portion.
Thus, a method is provided for training a machine learning model. The trained machine learning model makes it possible to obtain more information from measurement data about a new target portion of a layer that is obtained using the first measurement process, without having to additionally perform the second measurement process (which may be a relatively expensive and/or slow technique, such as electron microscopy or second-harmonic imaging microscopy).
In an embodiment, the layer comprising the two-dimensional material used to obtain the training dataset is supported on a non-planar support surface, a surface topography of the non-planar support surface being configured to provide a predetermined defect distribution in the layer. This approach can ensure that the training dataset trains the machine learning model effectively over a desired range of defect distributions without the training set having to be excessively large.
In an embodiment, a method for providing a layer comprising a two-dimensional material on a substrate, comprising: forming a layer comprising a two-dimensional material on a substrate using a formation process; performing metrology on the layer comprising the two-dimensional material using a method of performing metrology according to any of the embodiments disclosed herein; and modifying one or more process parameters of the formation process based on the obtained metrology information and repeating the formation process to form a layer comprising a two-dimensional material on a new substrate. Thus, any of the methods of performing metrology of embodiments of the disclosure may be used to support control of a manufacturing process for producing layers comprising two-dimensional materials (patterned or unpatterned). Layers of more consistent and/or higher quality can therefore be produced, which may improve overall device manufacturing efficiency and/or yield.
Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts, and in which:
This specification discloses one or more embodiments that incorporate the features of this invention. The disclosed embodiment(s) merely exemplify the invention. The scope of the invention is not limited to the disclosed embodiment(s). The invention is defined by the claims appended hereto.
The embodiment(s) described, and references in the specification to “one embodiment,” “an embodiment,” “an example embodiment,” etc., indicate that the embodiment(s) described may include a particular feature, structure, or characteristic, but every embodiment may not necessarily include the particular feature, structure, or characteristic. Moreover, such phrases are not necessarily referring to the same embodiment. Further, when a particular feature, structure, or characteristic is described in connection with an embodiment, it is understood that it is within the knowledge of one skilled in the art to effect such feature, structure, or characteristic in connection with other embodiments whether or not explicitly described.
Before describing such embodiments in more detail, however, it is instructive to present an example environment in which embodiments of the present disclosure may be implemented.
The illumination system may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic, or other types of optical components, or any combination thereof, for directing, shaping, or controlling radiation.
The support structure supports, i.e., bears the weight of, the patterning device. It holds the patterning device in a manner that depends on the orientation of the patterning device, the design of the lithographic apparatus, and other conditions, such as for example whether or not the patterning device is held in a vacuum environment. The support structure can use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning device. The support structure may be a frame or a table, for example, which may be fixed or movable as required. The support structure may ensure that the patterning device is at a desired position, for example with respect to the projection system. Any use of the terms “reticle” or “mask” herein may be considered synonymous with the more general term “patterning device.”
The term “patterning device” used herein should be broadly interpreted as referring to any device that can be used to impart a radiation beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate. It should be noted that the pattern imparted to the radiation beam may not exactly correspond to the desired pattern in the target portion of the substrate, for example if the pattern includes phase-shifting features or so called assist features. Generally, the pattern imparted to the radiation beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
The patterning device may be transmissive or reflective. Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types. An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. The tilted mirrors impart a pattern in a radiation beam, which is reflected by the minor matrix.
The term “projection system” used herein should be broadly interpreted as encompassing various types of projection system, including refractive, reflective, catadioptric, magnetic, electromagnetic and electrostatic optical systems, or any combination thereof, as appropriate for the exposure radiation being used, or for other factors such as the use of an immersion liquid or the use of a vacuum. Any use of the term “projection lens” herein may be considered as synonymous with the more general term “projection system.”
In this embodiment, for example, the apparatus is of a transmissive type (e.g., employing a transmissive mask). Alternatively, the apparatus may be of a reflective type (e.g., employing a programmable minor array of a type as referred to above, or employing a reflective mask).
The lithographic apparatus may be of a type having two (dual stage) or more substrate tables and, for example, two or more mask tables. In such “multiple stage” machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.
The lithographic apparatus may also be of a type wherein at least a portion of the substrate may be covered by a liquid having a relatively high refractive index, e.g., water, so as to fill a space between the projection system and the substrate. An immersion liquid may also be applied to other spaces in the lithographic apparatus, for example between the mask and the projection system. Immersion techniques are well known in the art for increasing the numerical aperture of projection systems. The term “immersion” as used herein does not mean that a structure, such as a substrate, must be submerged in liquid, but rather only means that liquid is located between the projection system and the substrate during exposure.
Referring to
The illuminator IL may comprise an adjuster AD for adjusting the angular intensity distribution of the radiation beam. Generally, at least the outer and/or inner radial extent (which are commonly referred to as G-outer and G-inner, respectively) of the intensity distribution in a pupil plane of the illuminator can be adjusted. In addition, the illuminator IL may comprise various other components, such as an integrator IN and a condenser CO. The illuminator may be used to condition the radiation beam to have a desired uniformity and intensity distribution in its cross section.
The radiation beam B is incident on the patterning device (e.g., mask MA), which is held on the support structure (e.g., mask table MT), and is patterned by the patterning device. Having traversed the mask MA, the radiation beam B passes through the projection system PS, which focuses the beam onto a target portion C of the substrate W. With the aid of the second positioner PW and position sensor IF (e.g., an interferometric device, linear encoder, 2-D encoder or capacitive sensor), the substrate table WT can be moved accurately, e.g., so as to position different target portions C in the path of the radiation beam B. Similarly, the first positioner PM and another position sensor (which is not explicitly depicted in
The depicted apparatus could be used in at least one of the following modes:
Combinations and/or variations on the above described modes of use or entirely different modes of use may also be employed.
As shown in
In order that the substrates that are exposed by the lithographic apparatus are exposed correctly and consistently, it is desirable to inspect exposed substrates to measure properties such as overlay errors between subsequent layers, line thicknesses, critical dimensions (CD), etc. If errors are detected, adjustments, for example, can be made to exposures of subsequent substrates, especially if the inspection can be done soon and fast enough that other substrates of the same batch are still to be exposed. Also, already exposed substrates may be stripped and reworked to improve yield, or possibly be discarded, thereby avoiding performing exposures on substrates that are known to be faulty. In a case where only some target portions of a substrate are faulty, further exposures can be performed only on those target portions that are deemed to be non-faulty.
An inspection apparatus, which may also be referred to as a metrology apparatus, is used to determine the properties of the substrates, and in particular, how the properties of different substrates or different layers of the same substrate vary from layer to layer. The inspection apparatus may be integrated into the lithographic apparatus LA or the lithocell LC or may be a stand-alone device. To enable most rapid measurements, it is desirable that the inspection apparatus measure properties in the exposed resist layer immediately after the exposure. However, the latent image in the resist has a very low contrast, as in there is only a very small difference in refractive index between the parts of the resist which have been exposed to radiation and those which have not—and not all inspection apparatus have sufficient sensitivity to make useful measurements of the latent image. Therefore measurements may be taken after the post-exposure bake step (PEB) that is customarily the first step carried out on exposed substrates and increases the contrast between exposed and unexposed parts of the resist. At this stage, the image in the resist may be referred to as semi-latent. It is also possible to make measurements of the developed resist image, at which point either the exposed or unexposed parts of the resist have been removed, or after a pattern transfer step such as etching. The latter possibility limits the possibilities for rework of faulty substrates but may still provide useful information.
At least the 0th and one of the −1 and +1 orders diffracted by the target on substrate W are collected by objective lens 16 and directed back through beam splitter 15. A second beam splitter 17 divides the diffracted beams into two measurement branches. In a first measurement branch, optical system 18 forms a diffraction spectrum (pupil plane image) of the target on first sensor 19 (e.g., a CCD or CMOS sensor) using the zeroth and first order diffractive beams. Each diffraction order hits a different point on the sensor, so that image processing can compare and contrast orders. The pupil plane image captured by sensor 19 can be used for focusing the metrology apparatus and/or normalizing intensity measurements of the first order beam. The pupil plane image can be used for many measurement purposes such as reconstruction.
In the second measurement branch, optical system 20, 22 forms an image of the target on the substrate W on sensor 23 (e.g., a CCD or CMOS sensor). In the second measurement branch, an aperture stop 21 is provided in a plane that is conjugate to the pupil-plane. Aperture stop 21 functions to block the zeroth order diffracted beam so that the image of the target formed on sensor 23 is formed only from the −1 or +1 first order beam. The image detected by sensor 23 is thus referred to as a ‘dark-field’ image. Note that the term ‘image’ is used here in a broad sense. An image of the grating lines as such will not be formed, if only one of the −1 and +1 orders is present.
The images captured by sensors 19 and 23 are output to image processor and controller PU, the function of which will depend on the particular type of measurements being performed.
Examples of scatterometers and techniques can be found in patent applications US 2006/066855 A1, WO 2009/078708, WO 2009/106279, and US 2011/0027704 A, which are all incorporated by reference herein in their entireties.
In some embodiments, the method comprises a step S2 of illuminating a target portion 32 of the layer 30 with an incoherent beam of radiation. The step S2 further comprises detecting radiation redirected (e.g. scattered) by the target portion 32 of the layer 30 to obtain measurement data. The illumination may be performed using radiation having a wavelength in the range 10 nm-1000 nm, for example between 400 nm and 900 nm. In an embodiment, the method is implemented using an optical apparatus of the type described above with reference to
In some embodiments, the method comprises a step S3 of processing the measurement data obtained in step S2 to obtain metrology information about the target portion 32 of the layer 30.
In some embodiments, the method comprises performing steps S2 and S3 for plural different target portions 32 to obtain metrology information for the plural target portions of the layer 30. The metrology information for the plural target portions may be used to construct a map of metrology information over a region of the substrate W covered by the plural portions 32 of the layer 30 (e.g. by stitching together in software information from each of the target portions 32). The map of metrology information may be referred to as a fingerprint.
The method may comprise a final step S4 of outputting the metrology information, for example as an output data stream (e.g. for use as feedback to manufacturing processes) or as information displayed on a screen.
In an embodiment, the measurement data comprises data derived from a detected image formed in a dark field imaging mode. The detected image may, for example, be obtained using the sensor 23 in the optical apparatus of
In an embodiment, the measurement data comprises data derived from a detected distribution of radiation in a pupil plane. The detected distribution of radiation in a pupil plane may, for example, be obtained using the sensor 19 in the optical apparatus of
In some embodiments, the method comprises a step S12 of performing dark field holographic microscopy on a target portion 32 of the layer 30 to obtain measurement data. The holographic microscopy may be performed using radiation having a wavelength in the range 10 nm-1000 nm, for example between 400 nm and 900 nm. Unlike the embodiments described above with reference to
In some embodiments, the method comprises a step S13 of processing measurement data obtained from the dark field holographic microscopy of step S12 to obtain metrology information about the target portion 32 of the layer 30.
In some embodiments, the method comprises performing steps S12 and S13 for plural different target portions 32 to obtain metrology information for the plural target portions 32 of the layer 30. The metrology information for the plural target portions may be used to construct a map of metrology information over a region of the substrate covered by the plural portions 32 of the layer 30 (e.g. by stitching together in software information from each of the target portions 32). The map of metrology information may be referred to as a fingerprint.
The obtained metrology information may comprise information about a defect distribution in the layer 30. Embodiments of the disclosure are particularly applicable to the case where the defect distribution comprises information about a spatial distribution of grain boundaries. The information about the spatial distribution of grain boundaries may comprise information about a spatial distribution of a density of the grain boundaries. Various metrics may be used to quantify the density of grain boundaries. For example, a metric may be based on one or more of the following: a total length of grain boundary per unit area; a number of grain boundaries per unit area; and a proportion of the surface area occupied by grain boundary per unit area. Information about rate of change of the metric as a function of a position may be obtained to quantify a gradient of the distribution of grain boundaries (e.g. to obtain a rate of change with position of a grain boundary density). Grain boundaries in two-dimensional materials may disrupt properties of the two-dimensional materials that are relevant to functionality provided in a device being manufactured. For example, where the two-dimensional material forms part of an electrically functional element, increases in resistivity caused by grain boundaries may degrade device performance. The detection modes described above with reference to
In some embodiments, the obtained information about defect distribution may comprise other information relevant to the quality of two-dimensional materials. The obtained information may comprise one or more of the following: variations in layer thickness; a distribution of islands of additional layers (e.g. regions where there is a 2nd or 3rd layer erroneously present on the 1st layer); a distribution of defects in a pattern formed in the two-dimensional material (e.g. causing variations in critical dimension (CD) and/or in the quality of edges in the pattern); a distribution of layer delamination.
The inventors have found that the spatial density of grain boundaries and other defects often increases towards peripheral edges of the substrate W. This may occur, for example, due to radial distributions of substrate temperature that arise during deposition processes (such as chemical vapour deposition). Based on this insight, in some embodiments the target portions 32 are arranged so that at least a majority of the target portions 32 are positioned within a distance from a radial periphery of the substrate W nearest to the target portion 32 that is less than 20%, optionally less than 15%, optionally less than 10% of an average separation between the radial periphery and a center of mass of the substrate W. In some embodiments, the target portions 32 are all positioned closer to a nearest periphery of the substrate W than to the center of mass of the substrate W. In other embodiments, some target regions are positioned at or near to the center of mass of the substrate W to provide reference target regions. The substrate W may take various shapes in principle. In a case where the substrate W is a circular disk the center of mass would correspond to an axis of the disk and the radial periphery would be the circumferential edge of the disk. Providing target portions 32 preferentially towards the radial periphery of the substrate W in the manners described above ensures that the target portions 32 sample available information about the spatial distribution of defects efficiently, particularly in the case where the defects of interest are grain boundaries. The target portions 32 will, for example, typically contain more of the defects of interest than target portions 32 located closer to the center of mass of the substrate W. Fewer and/or smaller target portions 32 may therefore need to be measured in order to provide useful information about the defect distribution. The risk of taking time to measure target portions 32 that contain no (or insufficient) defects of interest may be reduced. In embodiments where reference target regions are also present at or near to the center of mass of the substrate W as mentioned above, useful comparisons may be between the reference target regions (which may typically contain no defects or a smaller number of defects) and target regions closer to the radial periphery (where more defects are expected). The reference target regions may, for example, provide information about a background signal that is unrelated to the presence of the defects of interest.
In some embodiments, the target portions 32 may be made to vary in size and/or shape as a function of position on the substrate W. The variation in size and/or shape may, for example, be selected taking into account an expected defect distribution in the layer 30. For example, where a higher density of defects is expected towards a radial periphery of the substrate W, an average surface area of the target portions 32 may be arranged to decrease monotonically as a function of increasing separation from a center of mass of the substrate W. In this way, variation in the amount of grain boundary between different target portions 32 may be reduced (e.g. by providing smaller target portions 32 in regions of high grain boundary density and vice versa), which may facilitate finding of an optimum balance between quality and speed of the measurement process being used (e.g. based on scattering of incoherent radiation or dark field holographic microscopy).
Various techniques may be used to perform the processing of the measurement data (e.g. in step S3 of
In embodiments where the defects of interest comprise grain boundaries, the processing of the measurement data may use a pattern recognition algorithm or a segmentation algorithm to determine one or more of the following: a spatial distribution of a density of grain boundaries; a spatial distribution of a gradient in a density of grain boundaries.
In some embodiments, the processing of the measurement data (e.g. in step S3 of
In some embodiments, the method comprises obtaining a training dataset by performing a first measurement process on a target portion 32 of the layer 30 for multiple different target portions 32 of the layer 30. In some embodiments, as exemplified in
The obtained training dataset is used to train the machine learning model such that the trained machine learning model is capable of deriving metrology information about a new target portion 32 (e.g. a target portion 32 that was not used to train the machine learning model) from measurement data obtained by performing the first measurement process on the new target portion 32. In the example of
In an embodiment, the first measurement process (performed in step S22) comprises illuminating each target portion 32 of the layer 30 with an incoherent beam of radiation and detecting radiation redirected by the target portion 32. The first measurement process may thus be performed using any of the techniques described above with reference to step S2 of
In an embodiment, the first measurement process (performed in step S22) comprises obtaining a detected distribution of radiation in a pupil plane (e.g. in a bright field imaging mode). The detected distribution of radiation in a pupil plane may, for example, be obtained using the sensor 19 in the optical apparatus of
In an embodiment, the first measurement process (performed in step S22) comprises dark field holographic microscopy. The first measurement process may thus be performed using any of the techniques described above with reference to step S12 of
In some embodiments, the second measurement process is a process that is capable of providing more detailed information about defects of interest in the layer 30, such as grain boundaries, than the first measurement process. The second measurement process may, however, be more expensive and/or slower than the first measurement process. By training the machine learning model based on measurement data from both of the first and second measurement processes, the machine learning model learns to obtain more useful information from the measurement data obtained in the future only from the first measurement process. The machine learning model may for example learn how to correlate subtle features in the first measurement data with features confirmed to be defects of interest in the second measurement data. The machine learning model makes it possible for high quality information to be obtained from measurements of a new layer 30 that only use the first measurement process. High quality information can thus be obtained with high efficiency (e.g. low cost and/or high speed).
In some embodiments, the machine learning model comprises a supervised (e.g., fully supervised or semi-supervised) machine learning model. The measurement data from the second measurement process is processed to obtain metrology information about the target portions 32 of the layer 30. The metrology information obtained using the measurement data from the second measurement process provides labels for training the supervised machine learning model using measurement data from the first measurement process. The combination of measurement data from the first and second measurement processes may be considered as a calibration. The first and second measurement processes provide pairs of data units to the training dataset. The first measurement process provides measurement data corresponding to what will be obtained when measuring new target portions and the second measurement process links those measurements to metrology information of interest (e.g. to a density of grain boundaries). The labels may take various forms depending on the nature of the metrology information of interest. Each label may, for example, comprise or consist of one of the metrics discussed above for quantifying a density of grain boundaries corresponding to a target portion that has been measured. Each label obtained by applying the second measurement process to a particular target portion is assigned to measurement data obtained by applying the first measurement process to the same target portion or a target portion in close proximity to that target portion (e.g. a target portion that is closest and/or overlapping with it). The first measurement process can be performed on any region of the substrate where the two-dimensional material is present, including where a device may be manufactured. The second measurement process may be destructive if needed. It is noted that the second measurement process is not necessarily needed for the training, for example where a predefined defect distribution is induced as described below (e.g. using spatially varying surface topography and/or surface composition). The predefined nature of the defect distribution makes it possible to know the defect distribution in advance. The known defect distribution can be used directly to provide labels for measurement data from the first measurement process in the training dataset (without any additional measurement steps).
In some embodiments, either or both of the first measurement process and the second measurement process comprise illuminating each target portion 32 of the layer 30 with an incoherent beam of radiation and detecting radiation redirected by the target portion 32. In an example implementation, the first measurement process comprises detecting an image in a bright field imaging mode and the second measurement process comprising detecting an image in a dark field imaging mode. Signals obtained from dark field and bright field imaging, which may be referred to respectively as dark field signals and bright field signals, may be considered as different response functions from an illuminated area. Each response function can be represented as a distribution of radiation in an image plane (e.g. as detected using the sensor 23 in the optical apparatus of
In an embodiment, the second measurement process comprises electron microscopy, such as scanning electron microscopy.
In an embodiment, the second measurement process comprises second-harmonic imaging microscopy. The second-harmonic imaging microscopy may be particularly effective for detecting defects of interest when the microscopy uses dark field imaging. The second-harmonic imaging microscopy may also use a detected distribution of radiation in a pupil plane. Second-harmonic imaging microscopy as a general technique is known in the art and could be implemented using a wide variety of optical configurations. The technique is based on using variations in an ability of the layer 30 to generate second-harmonic light to provide contrast in an image. Defects such as grain boundaries can be made to generate second-harmonic light differently (e.g. more) than regions of the layer 30 away from the defects. This effect can allow defects to be viewed more clearly than might be possible using conventional optical microscope techniques, which rely on detecting variations in optical density, path length or refractive index. In some embodiments, the second-harmonic imaging microscopy is implemented using an optical apparatus of the type discussed above with reference to
In some embodiments, the layer 30 that is used to obtain the training dataset is deliberately manipulated to provide a predefined variation in defect distribution. This approach can ensure that the training dataset trains the machine learning model effectively over a desired range of defect distributions without the training set having to be excessively large (which might otherwise be the case if the training relied on more random variations in defect distributions in the training set). Alternatively or additionally, this approach can be used to allow labels to be added to data in the training dataset without separate measurements of the defect distribution. In some embodiments, this is achieved by arranging for the layer 30 to be supported on a non-planar support surface, with a surface topography of the non-planar support surface being configured to provide a predetermined defect distribution in the layer 30. For example, it is expected that formation of grain boundaries will be favored at regions where a slope in the support changes quickly (e.g. along sharp convex ridges, etc.). In some embodiments, lithography techniques are used to provide the non-planar support surface. Lithography techniques provide a high degree of local precision and control. Training zones having different topologies can thus be created with high flexibility and accuracy. Such high quality training zones promote effective and reliable training of the machine learning model.
Alternatively or additionally, in some embodiments the layer 30 that is used to obtain the training dataset is supported on a support surface having a non-uniform composition, with a spatial variation of the composition in the support surface being configured to provide a predetermined defect distribution in the layer 30.
In some embodiments, as exemplified in
In some embodiments, the substrate is pre-processed to make it easier for defects such as grain boundaries to be distinguished. The pre-processing may be applied prior to any of the methods of performing metrology described above with reference to
Apparatus may be provided for performing any of the methods described above. For example, a measurement system may be provided for illuminating a target portion 32 of a layer 30 of two-dimensional material on a substrate. The measurement system may be configured to detect radiation redirected by the target portion 32, such as a distribution of radiation in a pupil plane, to obtain measurement data. The apparatus described above with reference to
The embodiments may further be described using the following clauses:
The embodiments may further be described using the following clauses:
Although specific reference may be made in this text to the use of lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described herein may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat-panel displays, liquid-crystal displays (LCDs), thin film magnetic heads, etc. The skilled artisan will appreciate that, in the context of such alternative applications, any use of the terms “wafer” or “die” herein may be considered as synonymous with the more general terms “substrate” or “target portion”, respectively. The substrate referred to herein may be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist), a metrology tool and/or an inspection tool. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multi-layer IC, so that the term substrate used herein may also refer to a substrate that already contains multiple processed layers.
Although specific reference may have been made above to the use of embodiments of the invention in the context of optical lithography, it will be appreciated that the invention may be used in other applications, for example imprint lithography, and where the context allows, is not limited to optical lithography. In imprint lithography a topography in a patterning device defines the pattern created on a substrate. The topography of the patterning device may be pressed into a layer of resist supplied to the substrate whereupon the resist is cured by applying electromagnetic radiation, heat, pressure or a combination thereof. The patterning device is moved out of the resist leaving a pattern in it after the resist is cured.
The terms “radiation” and “beam” used herein encompass all types of electromagnetic radiation, including ultraviolet (UV) radiation (e.g., having a wavelength of or about 365, 355, 248, 193, 157 or 126 nm) and extreme ultra-violet (EUV) radiation (e.g., having a wavelength in the range of 5-20 nm), soft X-ray, as well as particle beams, such as ion beams or electron beams.
The term “lens,” where the context allows, may refer to any one or combination of various types of optical components, including refractive, reflective, magnetic, electromagnetic, and electrostatic optical components.
The foregoing description of the specific embodiments will so fully reveal the general nature of the invention that others can, by applying knowledge within the skill of the art, readily modify and/or adapt for various applications such specific embodiments, without undue experimentation, without departing from the general concept of the present invention. Therefore, such adaptations and modifications are intended to be within the meaning and range of equivalents of the disclosed embodiments, based on the teaching and guidance presented herein. It is to be understood that the phraseology or terminology herein is for the purpose of description and not of limitation, such that the terminology or phraseology of the present specification is to be interpreted by the skilled artisan in light of the teachings and guidance.
The breadth and scope of the present invention should not be limited by any of the above-described exemplary embodiments, but should be defined only in accordance with the following claims and their equivalents.
| Number | Date | Country | Kind |
|---|---|---|---|
| 20196358.4 | Sep 2020 | EP | regional |
| 21191255.5 | Aug 2021 | EP | regional |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/EP2021/072787 | 8/17/2021 | WO |
