This invention relates to a method of producing an electrical circuit element, and more particularly an element comprising an elongate electrical conductor encircled by magnetic material extending along at least a part of the conductor.
Encircling the conductor of an inductive element with a magnetic material can significantly increase its inductance or reduce its size while maintaining a constant inductance. A reduction in inductor size is especially valuable for microscopic inductors made using semiconductor-type manufacturing techniques such as mask-controlled deposition and etching of materials on a substrate, since it leads to a reduction in occupied chip area which enables more devices to be produced for a given sequence of manufacturing operations and a given overall substrate (‘wafer’) size.
However using even high resistivity ferromagnetic materials restricts the applicability of such devices to well below 1 GHz due to ferromagnetic resonance (FMR) losses. A composite made of electrically isolated ferromagnetic nanoparticles that coats a metal wire (especially a straight line or meander) in such a way that the easy axis magnetization is set along the wire axis would help increase the FMR frequency and enable full advantage to be taken of having the magnetic field normal to the easy axis, hence having maximum RF magnetic response from the composite.
Magnetic shielding is another property for which it is desirable to encircle an electrical conductor with magnetic material extending along at least a part of the conductor. The magnetic flux round the conductor generated by current flowing along the conductor is contained to a large extent by the encircling magnetic material instead of radiating out and causing electromagnetic interference. This can be especially useful in applications where an inductor is disposed in proximity to other components that are sensitive to parasitic electromagnetic fields.
Process solutions for the fabrication of such embedded conductor structures are needed. U.S. Pat. No. 6,254,662 discloses forming a thin film of magnetic alloy nanoparticles for high density data storage. However, no disclosure is made of a method of producing an inductive element comprising an elongate conductor encircled by magnetic material extending along at least a part of the conductor.
The present invention provides a method of producing an electrical circuit element as described in the accompanying claims.
The manufacturing process illustrated in the accompanying drawings is one embodiment of a method of producing an electrical circuit element comprising an elongated electrical conductor 1 encircled by a coating of magnetic material 2 of high permeability that extends along at least a substantial part of the conductor 1. This fabrication method for coated metal wires with magnetic composite is applicable for inductors that are capable of functioning well into the GHz frequency range, potentially as high as 10 GHz.
In one embodiment of the process, the magnetic material 2 is in intimate contact with the conductor 1. In another embodiment of the process, the conductor is embedded in the magnetic material 2 without being fully in intimate contact with it. Coating the electrical conductor 1 of an inductor in this way with high permeability magnetic material in a thin layer substantially increases the inductance of the circuit element. As shown in
This configuration of conductor embedded in magnetic material that encircles it is especially suitable for inductors where there conductor 1 is straight or comprises a series of straight parallel elements, alternate ends of adjacent elements being connected so as to form a meander as shown in
The magnetic material 2 comprises nanometre sized particles of ferromagnetic material. Suitable ferromagnetic materials include Iron, and Iron based alloys with Cobalt, Nickel and other metallic elements.
The ferromagnetic resonance frequency of the magnetic material 2 depends on the aspect ratio, of thickness to lateral dimensions, of the individual particles and the volume fraction metal magnetic material in the layer 2, as well as the wire aspect ratio of the conductor and layer.
In a second step, a layer 8 of Silicon Dioxide (SiO2) is deposited on the substrate 6 and is planerised to remove the Silicon Dioxide from above the photo resist pattern 7 and form a suitable planar surface for the following steps.
In a third step, metal is deposited on the Silicon Dioxide and over the photo resist 7 using a low temperature process, for example electroplating, so as to preserve the photo resist 7. The deposited metal is masked and etched, for example by plasma etching, to define the desired shape for the conductor 1. A further layer of photo resist polymer is then deposited above and across the conductor 1 and the lower layer of photo resist 7 and etched to produce the desired pattern for an upper layer of the magnetic material 2. In a preferred example of this embodiment of the invention, a Silicon Nitride or seed layer is deposited before the deposition of the metal over the Silicon Dioxide and photo resist 7 so as to form a support membrane for the conductor 1 when the photo resist lower layer 7 is subsequently removed.
It will be appreciated that the views of
In a fourth step, a further layer 11 of Silicon Dioxide is deposited over the lower layer of Silicon Dioxide 8 and over the ends of the conductor 1 and planerised to remove it from the photo resist 10.
In a fifth step, the polymer photo resist sacrificial layers 10 and 7 are removed by a suitable solvent, leaving the conductor 1 suspended extending across the middle of a cavity 12 in the Silicon Dioxide layers 8 and 11, supported by the membrane 9 if desired.
In the first step the layer 8 of Silicon Dioxide is deposited on the substrate 6. The Silicon Dioxide layer 8 is then etched to produce a desired pattern for the lower layer of magnetic material 2.
In a second step a polymer photo resist material is deposited to fill the cavity left by the etching process of the first step and the polymer layer planerised. The polymer material chosen is insensitive to mask solvent.
In a third step, the conductor 1 is formed on the layer 8, if desired with the membrane support 9 and a layer of Silicon Dioxide 10 formed over the lower Silicon Dioxide layer 8 and the conductor 1 and the polymer 7.
In a fourth step, part of the Silicon Dioxide layer 10 is removed over part of the conductor 1 and over the sacrificial polymer layer 7 to leave a cavity 13 corresponding to the desired upper part of the magnetic material 2, for example using an etching process that preserves the metal of the conductor 1 and the membrane 9.
In a fifth step, the sacrificial polymer layer 7 below the conductor 1 is removed by a suitable solvent.
The upper view of
As shown in
As shown in
Subsequently, a protective layer 19 of Silicon Dioxide or Silicon Nitride, for example, is deposited over the magnetic layer 2 and lastly the resin layer 14 forming the funnel is removed using a suitable solvent.
In yet another embodiment of the present invention, instead of forming a layer of material 7 below the conductor 1 and subsequently removing it to define the cavity 12 for receiving the magnetic material at the same time below the conductor 1 as above it, as in the process of
Number | Date | Country | Kind |
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03293095.0 | Dec 2003 | EP | regional |
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/EP04/14167 | 12/10/2004 | WO | 3/22/2007 |