A SIMOX wafer is produced by implanting oxygen ions into a surface of a Si substrate and then conducting a high-temperature annealing, in which a SOI film having a thickness thicker than a target SOI film thickness is previously formed and a final adjustment of the SOI film thickness is carried out at an etching step arranged separately from a cleaning step.
Description
BRIEF DESCRIPTION OF THE DRAWING
FIG. 1 is a flow chart showing a SIMOX process.
Claims
1. A method of producing a SIMOX wafer by implanting oxygen ions into a surface of a Si substrate and then conducting a high-temperature annealing, in which a SOI film having a thickness thicker than a target SOI film thickness is previously formed and a final adjustment of the SOI film thickness is carried out at an etching step arranged separately from a cleaning step.
2. A method of producing a SIMOX wafer according to claim 1, wherein the cleaning step serves concurrently as the etching step.
3. A method of producing a SIMOX wafer according to claim 1 or 2, wherein the cleaning step is a batch cleaning, and a SOI film thickness just after the annealing is measured and an optimum etching time or a cleaning time including an etching is set every annealing batch to adjust the SOI film thickness.
4. A method of producing a SIMOX wafer according to claim 1 or 2, wherein the cleaning step is a sheet-feed cleaning, and a SOI film thickness just after the annealing is measured every the wafer and an optimum etching time or a cleaning time including an etching is set every the wafer to adjust the SOI film thickness.
5. A method of producing a SIMOX wafer according to claim 1 or 2, wherein a treating solution used in the etching step or the cleaning step inclusive of etching is a SC-1 based solution or a HF+O3 based solution.
Patent Application
20070224778
