This application claims priority to Japanese Patent Application No. 2021-205715 filed Dec. 20, 2021, the entire contents of which are hereby incorporated by reference.
Chemical mechanical polishing (CMP) is a technique of polishing a workpiece by bringing the workpiece into sliding contact with a polishing surface of a polishing pad while supplying a polishing liquid containing abrasive grains, such as silica (SiO2), onto the polishing surface. As shown in
Polishing of the workpiece W using such a polishing apparatus is performed as follows. While the polishing table 501 is rotated together with the polishing pad 500, the polishing liquid is supplied onto the polishing pad 500 from the polishing-liquid nozzle 508. The polishing head 505 rotates the workpiece W and presses the workpiece W against the polishing pad 500. While the workpiece W is in sliding contact with the polishing pad 500 in the presence of the polishing liquid, a surface of the workpiece W is planarized by a combination of a chemical action of the polishing liquid and a mechanical action of the polishing pad 500 and abrasive grains contained in the polishing liquid.
During polishing of the workpiece W, the surface of the workpiece W is placed in sliding contact with the rotating polishing pad 500, so that a frictional force acts on the workpiece W. Therefore, the polishing head 505 is provided with a retainer ring 510 in order to prevent the workpiece W from coming off the polishing head 505 when the workpiece W is being polished. The retainer ring 510 is arranged so as to surround the workpiece W, and the retainer ring 510 presses the polishing pad 500 outside the workpiece W while the retainer ring 510 is rotating during polishing of the workpiece W.
The polishing head 505 further has an elastic membrane 514 for pressing the workpiece W against the polishing pad 500. Pressure chambers 515 are formed inside the elastic membrane 514. When pressurized gas (for example, pressurized air) is supplied into the pressure chambers 515, the elastic membrane 514 under the fluid pressure in the pressure chambers 515 presses the workpiece W against the polishing pad 500. Therefore, the workpiece W is rubbed against the polishing pad 500 in the presence of the polishing liquid on the polishing pad 500.
Both the elastic membrane 512 and the elastic membrane 514 are fixed to a carrier 517 of the polishing head 505. The retainer ring 510 is configured to be vertically movable relative to the carrier 517 and the elastic membrane 514 so as to allow the retainer ring 510 to press the polishing pad 500 independently of the workpiece W.
After polishing of the workpiece W, as shown in
The retainer ring 510 is kept pressing the polishing pad 500 in order to prevent the workpiece W on the rotating polishing pad 500 from coming off the polishing head 505 even when the polishing head 505 is being raised. Thus, as shown in
However, when the workpiece W is being raised while the workpiece W is in contact with an inner surface of the retainer ring 510, the workpiece W may bend downward and an excessive stress may be generated in the workpiece W since a portion of the workpiece W that is in contact with the inner surface of the retainer ring 510 is forced to remain on the polishing pad 500. If this stress is too large, the workpiece W may crack. In particular, as shown in
Therefore, there is provided a method of raising a polishing head capable of preventing a workpiece from bending and preventing an excessive stress from generating in the workpiece by avoiding contact between the workpiece and an inner surface of a retainer ring when the polishing head is raised from a polishing pad after polishing of the workpiece. There is also provided a workpiece polishing apparatus capable of carrying out such a method. Furthermore, there is provided a computer-readable storage medium storing a program for executing such a method.
Embodiments, which will be described below, relate to a technique of reducing a stress on a workpiece after polishing of the workpiece and raising a polishing head together with the workpiece, such as wafer, substrate, panel, etc., used in manufacture of semiconductor devices.
In an embodiment, there is provided a method of raising a polishing head after polishing of a workpiece, comprising: polishing the workpiece by pressing the workpiece against a polishing pad while rotating the polishing head and the polishing pad; stopping the rotations of the polishing pad and the polishing head; raising a retainer ring of the polishing head relative to the workpiece to separate the retainer ring from the polishing pad and moving the retainer ring to a position higher than the workpiece; and then raising the polishing head with the workpiece held on the polishing head.
In an embodiment, the method further comprises holding the workpiece by the polishing head after polishing of the workpiece and before raising of the polishing head.
In an embodiment, raising the retainer ring to the position higher than the workpiece is performed before or simultaneously with holding the workpiece by the polishing head.
In an embodiment, holding the workpiece by the polishing head is performed while supplying fluid directly to an area between the workpiece and the polishing pad.
In an embodiment, the polishing head includes an elastic membrane forming a plurality of pressure chambers for pressing the workpiece against the polishing pad, holding the workpiece by the polishing head comprises holding the workpiece with the polishing head by forming a negative pressure in an outer pressure chamber of the plurality of pressure chambers and then forming a negative pressure in an inner pressure chamber of the plurality of pressure chambers.
In an embodiment, holding the workpiece by the polishing head is performed before stopping the rotations of the polishing pad and the polishing head.
In an embodiment, raising the polishing head comprises: raising the polishing head at a first speed until the entire workpiece is separated from the polishing pad; and raising the polishing head at a second speed higher than the first speed after the entire workpiece is separated from the polishing pad.
In an embodiment, there is provided a polishing apparatus for a workpiece, comprising: a polishing table configured to support a polishing pad; a polishing-table rotating device configured to rotate the polishing table together with the polishing pad; a polishing head configured to press the workpiece against the polishing pad to polish the workpiece; a polishing-head pressure controller configured to control pressure in the polishing head; a polishing-head rotating device configured to rotate the polishing head; a polishing-head elevating device configured to raise and lower the polishing head relative to the polishing table; and an operation controller configured to control operations of the polishing-table rotating device, the polishing-head pressure controller, the polishing-head rotating device, and the polishing-head elevating device, the polishing head having a retainer ring surrounding the workpiece, the operation controller being configured to: after polishing of the workpiece, instruct the polishing-table rotating device and the polishing-head rotating device to stop rotations of the polishing pad and the polishing head; instruct the polishing-head pressure controller to raise the retainer ring relative to the workpiece to separate the retainer ring from the polishing pad and move the retainer ring to a position higher than the workpiece; and then instruct the polishing-head elevating device to raise the polishing head with the workpiece held on the polishing head.
In an embodiment, the operation controller is configured to instruct the polishing-head pressure controller to cause the polishing head to hold the workpiece after the workpiece is polished and before the polishing head is raised.
In an embodiment, the operation controller is configured to instruct the polishing-head pressure controller to raise the retainer ring to the position higher than the workpiece before or simultaneously with the workpiece is held by the polishing head.
In an embodiment, the polishing apparatus further comprises a fluid supply system configured to supply fluid to an area between the workpiece and the polishing pad, the operation controller being configured to instruct the fluid supply system to supply the fluid directly to the area between the workpiece and the polishing pad when the polishing head holds the workpiece.
In an embodiment, the polishing head includes an elastic membrane forming a plurality of pressure chambers for pressing the workpiece against the polishing pad, and the operation controller is configured to instruct the polishing-head pressure controller to cause the polishing head to hold the workpiece by forming a negative pressure in an outer pressure chamber of the plurality of pressure chambers and then forming a negative pressure in an inner pressure chamber of the plurality of pressure chambers.
In an embodiment, the operation controller is configured to instruct the polishing-head pressure controller to cause the polishing head to hold the workpiece before rotations of the polishing pad and the polishing head are stopped.
In an embodiment, the operation controller is configured to instruct the polishing-head elevating device to raise the polishing head at a first speed until the entire workpiece is separated from the polishing pad, and raise the polishing head at a second speed higher than the first speed after the entire workpiece is separated from the polishing pad.
In an embodiment, there is provided a computer-readable storage medium storing a program for causing a computer to: instruct a polishing-head pressure controller, a polishing-table rotating device, and a polishing-head rotating device to polish a workpiece by pressing the workpiece against a polishing pad while rotating a polishing head and the polishing pad on a polishing table; after polishing of the workpiece, instruct the polishing-table rotating device and the polishing-head rotating device to stop the rotations of the polishing pad and the polishing head; instruct the polishing-head pressure controller to raise a retainer ring of the polishing head relative to the workpiece to separate the retainer ring from the polishing pad and move the retainer ring to a position higher that the workpiece; and instruct the polishing-head elevating device to raise the polishing head with the workpiece held on the polishing head.
According to the above-described embodiments, the retainer ring is raised higher than the workpiece prior to raising of the polishing head. Therefore, when the polishing head is raised, the workpiece does not come into contact with the retainer ring, and the workpiece is not bent downward by the retainer ring. As a result, an excessive stress is not generated in the workpiece, and cracking of the workpiece can be prevented.
Hereinafter, embodiments will be described with reference to the drawings.
As shown in
The polishing apparatus further includes a support shaft 14, a polishing-head oscillation arm 16 coupled to an upper end of the support shaft 14, a polishing-head shaft 18 rotatably supported by a free end of the polishing-head oscillation arm 16, and a polishing-head rotating device 20 configured to rotate the polishing-head shaft 18 and the polishing head 7. The polishing head 7 is fixed to a lower end of the polishing-head shaft 18. The polishing-head rotating device 20 is fixed to the polishing-head oscillation arm 16. The polishing-head rotating device 20 includes an electric motor, a torque transmission device, etc., but the configuration thereof is not particularly limited. The polishing-head rotating device 20 is coupled to the polishing-head shaft 18 and configured to rotate the polishing-head shaft 18 and the polishing head 7 in a direction indicated by arrow. A rotary joint 22 is coupled to an upper end of the polishing-head shaft 18.
The polishing apparatus further includes a polishing-head elevating device 25 configured to move the polishing head 7 and the polishing-head shaft 18 up and down relative to the polishing table 5 and the polishing-head oscillation arm 16. The polishing-head elevating device 25 may have a combination of a ball screw mechanism and a servomotor, or an actuator (e.g., an air cylinder), but the configuration of the polishing-head elevating device 25 is not particularly limited. When the polishing-head elevating device 25 moves the polishing-head shaft 18 vertically relative to the polishing-head oscillation arm 16, the polishing head 7 moves up and down relative to the polishing-head oscillation arm 16 and the polishing table 5 as indicated by arrows.
The polishing apparatus further includes a polishing-table rotating device 30 configured to rotate the polishing pad 2 and the polishing table 5 about their own axes. The polishing-table rotating device 30 is arranged below the polishing table 5, and the polishing table 5 is coupled to the polishing-table rotating device 30 via a table shaft 5a. The polishing-table rotating device 30 includes an actuator, such as an electric motor, but its configuration is not particularly limited. The polishing table 5 and the polishing pad 2 are integrally rotated about the table shaft 5a in a direction indicated by arrow by the polishing-table rotating device 30. The polishing pad 2 is attached to an upper surface of the polishing table 5. An exposed surface of the polishing pad 2 constitutes the polishing surface 2a for polishing the workpiece W, such as wafer.
The polishing apparatus further includes a polishing-head pressure controller 33 configured to control pressure inside the polishing head 7. The polishing-head pressure controller 33 is configured to operate components of the polishing head 7 (for example, a retainer ring and an elastic membrane, which will be described later). In this embodiment, the polishing-head pressure controller 33 includes pressure regulators (not shown) configured to regulate pressures of gas (e.g., air) as working fluid for operating the components of the polishing head 7. For example, the pressure regulator regulates the pressure of the gas supplied into the polishing head 7 to thereby regulate a force of the polishing head 7 for pressing the workpiece W against the polishing pad 2. The polishing-head pressure controller 33 is coupled to the rotary joint 22 and supplies the gas of a predetermined pressure to the polishing head 7 through the rotary joint 22.
The polishing apparatus further includes a polishing-head moving device 37 configured to move the polishing head 7 in a direction parallel to the polishing surface 2a of the polishing pad 2. The polishing-head moving device 37 is fixed to the upper end of the support shaft 14 and coupled to the polishing-head oscillation arm 16. The polishing-head moving device 37 rotates the polishing-head oscillation arm 16 around the support shaft 14 to move the polishing head 7, supported by the polishing-head oscillation arm 16, in a direction parallel to the polishing surface 2a of the polishing pad 2. It should be noted, however, that the configuration of the polishing-head moving device 37 is not limited to this embodiment. In one embodiment, the polishing-head moving device 37 may be coupled to a lower part of the support shaft 14 and configured to rotate the support shaft 14 and the polishing-head oscillation arm 16 together about the support shaft 14.
The polishing apparatus further includes an operation controller 40 configured to control the operations of the entire polishing apparatus including the polishing-head rotating device 20, the polishing-head elevating device 25, the polishing-table rotating device 30, the polishing-head pressure controller 33, and the polishing-head moving device 37. The operation controller 40 includes at least one computer. The operation controller 40 may include multiple computers. For example, the operation controller 40 may be composed of a combination of an edge server and a cloud server.
The operation controller 40 includes a memory 40a and an arithmetic device 40b. The arithmetic device 40b includes a CPU (Central Processing Unit) or GPU (Graphic Processing Module) configured to perform arithmetic operations according to instructions included in programs stored in the memory 40a. The memory 40a includes a main memory (e.g., random access memory) to which the arithmetic device 40b is accessible and an auxiliary memory (e.g., hard disk drive or solid state drive) for storing data and programs therein. However, the specific configurations of the operation controller 40 are not limited to these examples.
Polishing of the workpiece W is performed as follows. The workpiece W, with its surface, to be polished, facing downward, is held by the polishing head 7. While the polishing head 7 and the polishing table 5 are rotated, the polishing liquid (for example, slurry containing abrasive grains) is supplied onto the polishing surface 2a of the polishing pad 2 from the polishing-liquid supply nozzle 8 provided above the polishing table 5. The polishing pad 2 rotates about its central axis together with the polishing table 5. The polishing head 7 is lowered to a predetermined polishing-operation height by the polishing-head elevating device 25. Further, the polishing head 7 presses the workpiece W against the polishing surface 2a of the polishing pad 2 while the polishing head 7 is maintained at the polishing-operation height. The workpiece W rotates together with the polishing head 7. With the polishing liquid present on the polishing surface 2a of the polishing pad 2, the workpiece W is placed in sliding contact with the polishing surface 2a. The surface of the workpiece W is polished by a combination of a chemical action of the polishing liquid and a mechanical action of the polishing pad 2 and/or the abrasive grains contained in the polishing liquid.
Next, the details of the polishing head 7 will be described.
A lower surface of the first elastic membrane 51 constitutes a pressing surface 51a for pressing the workpiece W against the polishing pad 2. The pressing surface 51a is in contact with an upper surface of the workpiece W (i.e., a surface opposite to the surface to be polished). A plurality of first pressure chambers C1, C2, C3 are formed between the carrier 50 and the first elastic membrane 51. Specifically, the plurality of first pressure chambers C1, C2, C3 are formed inside the first elastic membrane 51. The central first pressure chamber C1 is circular, the first pressure chamber C2 outside the first pressure chamber C1 is annular, and the first pressure chamber C3 outside the first pressure chamber C2 is annular. These first pressure chambers C1, C2, C3 are arranged concentrically.
The first pressure chambers C1, C2, C3 are coupled to the polishing-head pressure controller 33 through first fluid lines F1, F2, F3 and the rotary joint 22. The polishing-head pressure controller 33 in this embodiment includes pressure regulators (not shown) configured to supply the gas of predetermined pressure(s) to the polishing head 7. When fluid (e.g., gas, such as air) is supplied to the first pressure chambers C1, C2, C3, the pressing surface 51a of the first elastic membrane 51 that receives the fluid pressure(s) in the first pressure chambers C1, C2, C3 presses the workpiece W against the polishing surface 2a of the polishing pad 2. The number of first pressure chambers C1, C2, C3 is not limited to the embodiment shown in
The retainer ring 48 is arranged so as to surround the workpiece W and the first elastic membrane 51. More specifically, the retainer ring 48 is arranged so as to surround the peripheral edge of the workpiece W and the pressing surface 51a of the first elastic membrane 51. An upper portion of the retainer ring 48 is coupled to an annular retainer-ring pressing mechanism 60. This retainer-ring pressing mechanism 60 is configured to apply a uniform downward load to an entire upper surface of the retainer ring 48 to press a lower surface of the retainer ring 48 against the polishing surface 2a of the polishing pad 2.
The retainer-ring pressing mechanism 60 has an annular second elastic membrane 62 attached to the carrier 50. A second pressure chamber 65 is formed inside the second elastic membrane 62. The second pressure chamber 65 is coupled to the polishing-head pressure controller 33 through a second fluid line F4 and the rotary joint 22. When fluid (e.g., gas, such as air) is supplied to the second pressure chamber 65 through the second fluid line F4, the second elastic membrane 62 receives the fluid pressure in the second pressure chamber 65 to push the entirety of the retainer ring 48 downward. In this manner, the retainer-ring pressing mechanism 60 presses the lower surface of the retainer ring 48 against the polishing surface 2a of the polishing pad 2.
When a negative pressure is formed in any one of the first pressure chambers C1, C2, and C3 by the polishing-head pressure controller 33, the workpiece W is held on the pressing surface 51a of the first elastic membrane 51 by vacuum suction. For example, as shown in
In one embodiment, the pressing surface 51a of the first elastic membrane 51 may have a through-hole (not shown) communicating with at least one of the first pressure chambers C1, C2, C3. In this case, when a negative pressure is formed in the first pressure chamber communicating with the through-hole, a negative pressure is also formed in the through-hole, and this negative pressure can attract the workpiece W to the pressing surface 51a of the first elastic membrane 51.
As shown in
Next, operations of the polishing head 7 during and after polishing of the workpiece W will be described with reference to
In step 1, the operation controller 40 instructs the polishing-table rotating device 30 and the polishing-head rotating device 20 to rotate the polishing pad 2 and the polishing head 7 at predetermined speeds, respectively. The polishing liquid is supplied from the polishing-liquid supply nozzle 8 onto the rotating polishing pad 2. The operation controller 40 instructs the polishing-head elevating device 25 to lower the polishing head 7 to the predetermined polishing-operation height. The operation controller 40 further instructs the polishing-head pressure controller 33 to supply the pressurized fluid to the first pressure chambers C1, C2, C3 and the second pressure chamber 65 of the polishing head 7, so that the workpiece W and the retainer ring 48 are pressed against the polishing surface 2a of the polishing pad 2 (see
The surface of the workpiece W is polished by the combination of the chemical action of the polishing liquid and the mechanical action of the abrasive grains contained in the polishing liquid and/or the polishing pad 2. During polishing of the workpiece W, the polishing pad 2 rotates together with the polishing table 5, and the workpiece W rotates together with the polishing head 7. During the polishing of the workpiece W, the polishing head 7 is maintained at the polishing-operation height. This polishing-operation height is a relative height of the entire polishing head 7 with respect to the polishing surface 2a of the polishing pad 2.
In step 2, after the polishing of the workpiece W is terminated, the polishing head 7 stops pressing the workpiece W against the polishing pad 2. After the polishing of the workpiece W is terminated, the supply of the polishing liquid to the polishing pad 2 is also stopped.
In step 3, the operation controller 40 instructs the polishing-table rotating device 30 and the polishing-head rotating device 20 to stop the rotations of the polishing pad 2 and the polishing head 7. The polishing-table rotating device 30 stops the rotation of the polishing pad 2 by stopping the rotation of the polishing table 5.
In step 4, the operation controller 40 instructs the polishing-head pressure controller 33 to raise the retainer ring 48 relative to the workpiece W to separate the retainer ring 48 from the polishing pad 2 until the retainer ring 48 is moved to a position higher than the workpiece W (see
In step 5, the operation controller 40 instructs the polishing-head pressure controller 33 to cause the polishing head 7 to hold the workpiece W. More specifically, a negative pressure is formed in at least one of the first pressure chambers C1 to C3 of the polishing head 7 so that the workpiece W is attracted to the pressing surface 51a of the first elastic membrane 51 by vacuum suction. At this time, at least part of the workpiece W is slightly pulled up from the polishing pad 2.
In step 6, the operation controller 40 instructs the polishing-head elevating device 25 to raise the entire polishing head 7 holding the workpiece W. The polishing head 7 is raised together with the workpiece W to a position higher than the polishing-operation height. The rotations of the polishing pad 2 and the polishing head 7 have already been stopped when the polishing head 7 and the workpiece W are being raised.
In step 7, the operation controller 40 instructs the polishing-head moving device 37 to rotate the polishing-head oscillation arm 16 about the support shaft 14 to move the polishing head 7 and the workpiece W to the predetermined workpiece transfer position.
In step 8, at the workpiece transfer position, a jet of the release fluid (e.g., pure water, gas, or a mixture thereof) is emitted from the release nozzles 71 to the contact portion between the workpiece W and the first elastic membrane 51 (see
According to the embodiment shown in
In the embodiment shown in
As shown in
In the embodiment shown in
In contrast, in the example shown in
From the above reason, it is preferable to first create a negative pressure in the outer first pressure chamber C3 and then create a negative pressure in the inner first pressure chamber C2. Such operations of holding the workpiece W allow the polishing head 7 to hold the workpiece W smoothly.
In one embodiment, as shown in
The fluid line 81 extends through the polishing table 5, and the fluid flows through an opening 83 formed in the polishing pad 2 onto the polishing surface 2a of the polishing pad 2. Examples of the actuator-driven valve 82 include motor-operated valve, solenoid valve, air-operated valve, and the like. The actuator-driven valve 82 is electrically coupled to the operation controller 40 so that operation of the actuator-driven valve 82 is controlled by the operation controller 40.
The operation controller 40 instructs the polishing-head pressure controller 33 to cause the polishing head 7 to hold the workpiece W, while the operation controller 40 instructs the fluid supply system 80 to supply the fluid to an area between the workpiece W and the polishing pad 2. With such operations, the workpiece W is held by the polishing head 7 while the fluid flows through the gap between the workpiece W and the polishing pad 2. The flow of the fluid in the gap between the workpiece W and the polishing pad 2 reduces the surface tension of the liquid acting between the workpiece W and the polishing pad 2. As a result, the polishing head 7 can hold the workpiece W reliably.
In one embodiment, while the polishing head 7 is being raised with the workpiece W from the polishing pad 2, the operation controller 40 may instruct the fluid supply system 80 to supply the fluid to the gap between the workpiece W and the polishing pad 2. The flow of the fluid in the gap between the workpiece W and the polishing pad 2 reduces the surface tension of the liquid acting between the workpiece W and the polishing pad 2. As a result, the polishing head 7 can smoothly separate the workpiece W from the polishing pad 2 when the polishing head 7 is raised.
In the step 6 described with reference to
Thus, in one embodiment described below, the polishing head 7 is raised at a first speed until the entire workpiece W is separated from the polishing pad 2, and after the entire workpiece W is separated from the polishing pad 2, the polishing head 7 is raised at a second speed higher than the first speed.
Configuration of the workpiece detector 90 is not particularly limited as long as the workpiece detector 90 can detect a point in time at which the workpiece W is separated from the polishing pad 2. The workpiece detector 90 may be a known sensor. For example, the workpiece detector 90 may be a displacement sensor configured to detect a displacement of the workpiece W, or may be a film-thickness sensor configured to detect a thickness of a film on the workpiece W (e.g., an eddy current sensor or an optical film-thickness sensor). In another example, the workpiece detector 90 may be configured to detect a point in time at which the workpiece W is separated from polishing pad 2 based on a change in pressure or flow rate of the fluid flowing from the opening in the polishing pad 2 to the gap between polishing pad 2 and the workpiece W.
As shown in
Such operations can reduce the stress on the workpiece W until the workpiece W is separated from the polishing pad 2. After the workpiece W is separated from the polishing pad 2, the polishing head 7 is raised rapidly, so that a throughput can be improved.
In this embodiment, after polishing of the workpiece W, the polishing head 7 is moved from a polishing position shown in
The operation of moving the polishing head 7 to the overhanging position is performed after polishing of the workpiece W and before the workpiece W is held by the polishing head 7. For example, in the flow chart shown in
At the overhanging position, a part of the workpiece W is located outside the polishing head 7, so that the surface tension of the liquid acting between the workpiece W and the polishing pad 2 is reduced. Therefore, the polishing head 7 can hold the workpiece W reliably.
After the polishing head 7 is raised together with the workpiece W from the polishing pad 2, the operation controller 40 instructs the polishing-head moving device 37 to move the polishing head 7 and the workpiece W to a workpiece transfer position TP shown in
The previous description of embodiments is provided to enable a person skilled in the art to make and use the present invention. Moreover, various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles and specific examples defined herein may be applied to other embodiments. Therefore, the present invention is not intended to be limited to the embodiments described herein but is to be accorded the widest scope as defined by limitation of the claims.
Number | Date | Country | Kind |
---|---|---|---|
2021-205715 | Dec 2021 | JP | national |