Claims
- 1. A method of developing an exposed layer of photoresist material on a semiconductor wafer to reduce the incidence of Blob defects comprising:developing the layer of photoresist first using a Puddle Development cycle; upon completion of the Puddle Development cycle, subjecting the semiconductor wafer to a Puddle Rinse cycle; and subjecting said semiconductor wafer to multiple additional Puddle Rinse cycles.
- 2. A method of developing an exposed layer of x-ray sensitive x-ray resist material on a semiconductor wafer to reduce the incidence of Blob Defects comprising:developing the layer of x-ray resist material first using a Puddle Development cycle; upon completion of the Puddle Development cycle, subjecting the semiconductor wafer to a Puddle Rinse cycle; and subjecting said semiconductor wafer to multiple additional Puddle Rinse cycles.
- 3. A method of developing an exposed layer of electron beam sensitive e-beam resist material on a semiconductor wafer to reduce the incidence of Blob Defects comprising:developing the layer of e-beam resist first using a Puddle Development cycle; upon completion of the Puddle Development cycle, subjecting the semiconductor wafer to a Puddle Rinse cycle; and subjecting said semiconductor wafer to multiple additional Puddle Rinse cycles.
- 4. A method of developing an exposed layer of ion beam sensitive resist material on a semiconductor wafer to reduce the incidence of Blob Defects comprising:developing the layer of ion beam resist first using a Puddle Development cycle; upon completion of the Puddle Development cycle, subjecting the semiconductor wafer to a Puddle Rinse cycle; and subjecting said semiconductor wafer to multiple additional Puddle Rinse cycles.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is related to U.S. Ser. No. 09/598,376, which is entitled “METHOD OF REDUCING POST-DEVELOPMENT DEFECTS IN AND AROUND OPENINGS FORMED IN PHOTORESIST BY USE OF NON-PATTERNED EXPOSURE”. Both applications have one common inventor, a common assignee, and are being filed concurrently.
US Referenced Citations (3)
Number |
Name |
Date |
Kind |
5292605 |
Thomson |
Mar 1994 |
A |
5759749 |
Fukuaka et al. |
Jun 1998 |
A |
6238848 |
Konishi et al. |
May 2001 |
B1 |