New Effect of Ti-Capping Lyer in Co Salicide Porcess Promising for Deep Sub-quarter Micron Technology, Ja-Hum Ku, Chul-Sung Kim, Chul-Joon Choi, Kazuyuki Fujihara, Ho-Kyu Kang, Moon-Yong Lee, Ju-Hyuck Chung, Eung-Joon Lee, Jang-Eun Lee, Dae-Hong Ko; Process Development, Team, Semiconductor R&D Division, Samsung Electronics San #24, Nongseo-Ri, Kiheyng-Eup, Yongin-City, Kyungki-Do, 449-900, Korea. |
The Influence of Capping Layer Type on Cobalt Salicide Formation in Films and Narrow Lines, P.R. Besser, A. Lauwers, N. Roelandts, K. Maex, W. Blum, R. Alvis, Stucchi, M. De Potter, Advanced Interconnect Process Development, Advanced Interconnects and Contact Materials and Processes for Future Ics. |
“Manufacturability Issues related to Transient Thermal Annealing of Titanium Silicide Films in a Rapid Thermal Processor” Shenai, K. IEEE Transactions on Semiconductor Manufacturing. vol. 4, No. 1, Feb., 1991, pp. 1-8. |
“Correlation of Film Thickness and Deposition Temperature with PAI and the Scalability of Ti-Salicide Technology to Sub-0.18 Tm Regime” Ho, C; Karunasiri, S.; Chua, S.; Pey, K.; Siah, S.; Lee, K.; Chan, L., Interconnect Tech, Conference, 1998, pp. 193-195. |
“A Model for Titanium Silicide Film Growth” Borucki, L.; Mann, R.; Miles, G.; Slinkman, J.; Sullivan, T.; Electron Devices Meeting, 1998, Technical Digest, Intl. 1998, pp. 348-351. |