Claims
- 1. A method for fabricating substrates, said method comprising:
providing a substrate; implanting ions into a surface of said substrate to a first desired depth to provide a first distribution of said ions using a plasma immersion ion implantation system, said implanted ions defining a first thickness of material above said implant; and increasing global energy of said substrate to initiate a cleaving action, said cleaving action being sufficient to completely free said thickness of material from a remaining portion of said substrate.
- 2. The method of claim 1 wherein said energy is selected from chemical, mechanical, or thermal.
- 3. The method of claim 2 wherein said thermal energy is provided by a furnace.
- 4. The method of claim 3 wherein said increased global energy causes microcavities and/or microbubbles to form at said first desired depth in said substrate.
- 5. The method of claim 1 wherein said implanting step is a patterned.
- 6. The method of claim 1 wherein said implanting step provides a second distribution of said ions at a second desired depth, said second distribution of ions defining a second thickness of material from said second desired depth to said first desired depth.
- 7. The method of claim 6 wherein said second desired depth is different than said first desired depth.
- 8. The method of claim 6 wherein said ions at said first desired depth have a different mass and/or charge state than said ions at said second desired depth.
- 9. The method of claim 6 wherein said step of increasing global energy also initiating a cleaving action sufficient to completely free said second thickness of material from a remaining portion of said substrate.
- 10. The method of claim 1 wherein said ions are derived from helium gas or its isotopes.
- 11. The method of claim 1 wherein said ions are derived from hydrogen gas or its isotopes.
- 12. A method for fabricating substrates, said method comprising:
providing a substrate; implanting ions into a surface of said substrate to a first desired depth to provide a first distribution of said ions using a process selected from plasma immersion ion implantation or ion shower, said implanted ions defining a first thickness of material above said implant; and removing said first thickness of said material to free said thickness of said material from said substrate.
- 13. The method of claim 12 wherein said removing step is provided by increasing global energy in said substrate, said increased global energy being selected from chemical, mechanical, or thermal.
- 14. The method of claim 13 wherein said thermal energy is provided by a furnace.
- 15. The method of claim 13 wherein said increased global energy causes microcavities to form at said first desired depth in said substrate.
- 16. The method of claim 12 wherein said implanting step is a patterned.
- 17. The method of claim 12 wherein said implanting step provides a second distribution of said ions at a second desired depth, said second distribution of ions defining a second thickness of material from said second desired depth to said first desired depth.
- 18. The method of claim 17 wherein said second desired depth is different than said first desired depth.
- 19. The method of claim 17 wherein said ions at said first desired depth have a different mass and/or charge state than said ions at said second desired depth.
- 20. The method of claim 17 wherein said step of removing also removing said second thickness of material from said substrate.
- 21. The method of claim 12 wherein said ions are derived from helium gas or its isotopes.
- 22. The method of claim 12 wherein said ions are derived from hydrogen gas or its isotopes.
- 23. The method of claim 12 wherein said step of implanting ions is a multiple implant step.
- 24. The method of claim 12 wherein said step of implanting ions is a multiple implant step using different ions.
- 25. The method of claim 12 wherein said step of implanting ions is a multiple implant step using different implant doses.
- 26. The method of claim 12 wherein said step of implanting ions is a multiple implant step using different energies.
- 27. The method of claim 12 wherein said step of implanting ions is a multiple implant step using different temperatures.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This present application claims priority to U.S. Provisional Patent Application Serial No. 60/047,833 (Attorney Docket No. 2307K-079600), which has been filed on May 28, 1997, and which is hereby incorporated by reference for all purposes.
GOVERNMENT RIGHTS NOTICE
[0002] This invention was made with government support under Grant No. F49620-97-1-0220-03/98 awarded by the Air Force (AFSOR) Joint Services Electronics Program (JSEP), and Grant No. ECS-9509800 awarded by the National Science Foundation. The Government has certain rights to this invention.
Provisional Applications (1)
|
Number |
Date |
Country |
|
60047833 |
May 1997 |
US |
Continuations (2)
|
Number |
Date |
Country |
Parent |
09431007 |
Nov 1999 |
US |
Child |
09860663 |
May 2001 |
US |
Parent |
08915132 |
Aug 1997 |
US |
Child |
09431007 |
Nov 1999 |
US |