Claims
- 1. A photolithographic mask, comprising:a multilayer substrate; a plurality of absorption members disposed on a surface of the substrate forming a mask pattern, the absorption members comprising nickel silicide, wherein the silicide absorbs sufficient amount of electromagnetic energy having a predetermined wavelength to act as a mask; and a plurality of reflective regions disposed between the absorption members, wherein the reflective regions pass electromagnetic energy at the predetermined wavelength.
- 2. The mask defined by claim 1, wherein the silicide is approximately 500 to 800 angstroms thick.
- 3. The mask defined by claim 1, further comprising an oxide, the oxide being disposed between the substrate and the silicide.
- 4. The mask defined by claim 1, wherein the predetermined wavelength of electromagnetic energy is approximately 13.4 nanometers.
- 5. The mask defined by claim 1, wherein the absorption members absorb a portion of the electromagnetic energy.
RELATED APPLICATIONS
The present patent application is a continuation of prior application Ser. No. 09/160,740, filed Sep. 25, 1998, now U.S. Pat. No. 6,355,381, entitled “A Method To Fabricate Extreme Ultraviolet Lithography Masks”, which is a related application to U.S. Pat. No. 5,936,737, filed Dec. 22, 1997, entitled “A Method Eliminating For Final EUV Mask Repairs In The Reflector Region;” and Ser. No 08/995,867, Filed Dec. 22, 1997, now U.S. Pat. No. 5,928,817, entitled “A Method Of Protecting An EUV Mask From Damage And Contamination;” and Ser. No. 08/995,949, filed Dec. 22, 1997, now U.S. Pat. No. 5,958,629, entitled “Using Thin Films As Etch Stop In EUV Mask Fabrication Process”. These co-pending applications are assigned to the assignee of the present invention.
US Referenced Citations (10)
Non-Patent Literature Citations (3)
Entry |
Mirkarimi, et al. “Advances in the Reduction and Compensation of Film Stress in High-reflectance Multilayer Coatings for Extreme Ultraviolet Lithography,” SPIE, vol. 3331, pp. 133-148. |
Takenaka, et al., “Evaluation of Mo-Based Multilayer EUV Mirrors,” OSA Proceedings on Extreme Ultraviolet Lithography, 1994, vol. 23, p. 26-32. |
Yan, Pei-yang, et al., “EUV Mask Absorber Defect Repair with Focused Ion Beam,” Intel Corporation, Santa Clara,CA and Lawrence Livermore National Laboratory, Livermore, CA., Undated, 8 pages. |
Continuations (1)
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Number |
Date |
Country |
Parent |
09/160740 |
Sep 1998 |
US |
Child |
09/971862 |
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US |