Claims
- 1. A method for processing a substrate, comprising:
positioning the substrate on a support member in a processing chamber, wherein the substrate has a metal layer formed thereon and is maintained at a temperature of about 150° C. or less; introducing a processing gas comprising (i) hydrogen chloride, (ii) an oxygen containing gas, and (iii) another chlorine containing gas into the processing chamber, wherein the hydrogen chloride and the another chlorine containing gas have a molar ratio between about 1:9 and about 9:1; delivering power to the processing chamber to generate a plasma; and etching exposed portions of the metal layer.
- 2. The method of claim 1, wherein the conformal metal layer comprises chromium.
- 3. The method of claim 1, wherein the oxygen containing gas is selected from the group of oxygen (O2), carbon monoxide (CO), carbon dioxide (CO2), and combinations thereof and the another chlorine containing gas is selected from the group of chlorine (Cl2), silicon tetrachloride (SiCl4), boron trichloride (BCl3), and combinations thereof.
- 4. The method of claim 1, wherein the oxygen containing gas comprises between about 5 vol. % and about 50 vol. % of the processing gas.
- 5. The method of claim 1, wherein the processing gas further comprises an inert gas selected from the group of helium, argon, xenon, neon, krypton, and combinations thereof.
- 6. The method of claim 1, wherein the substrate is maintained at a temperature between about 50° C. and about 150° C. and the processing chamber is maintained at a pressure between about 2 milliTorr and about 25 milliTorr.
- 7. The method of claim 1, wherein delivering power to the processing chamber comprises applying a source RF power between about 250 Watts and about 700 Watts to a coil disposed in the processing chamber.
- 8. The method of claim 1, further comprising applying a bias power to the support member of about 50 Watts or less.
- 9. The method of claim 1, wherein the molar ratio of hydrogen chloride to another chlorine containing gas is between about 1:5 and about 3:2.
- 10. The method of claim 1, wherein the molar ratio of hydrogen chloride to another chlorine containing gas is between about 3:7 and about 1:1.
- 11. The method of claim 2, wherein the substrate comprises a silicon based substrate with a metal layer disposed thereon and a resist material disposed on the metal layer, wherein the resist material and metal layer is removed at a removal rate ratio of chrome to resist of about 2:1 or greater.
- 12. The method of claim 5, wherein etching the substrate comprises introducing hydrogen chloride (HCl), oxygen (O2), chlorine (Cl2), and helium, into a processing chamber, maintaining the processing chamber at a pressure between about 2 milliTorr and about 25 milliTorr, maintaining the substrate at a temperature between about 50° C. and about 150° C., and generating a plasma by supplying a source RF power between about 250 Watts and about 700 Watts to the processing chamber, wherein the molar ratio of hydrogen chloride to another chlorine containing gas is between about 1:9 and 9:1 and the oxygen containing gas comprises between about 5 vol. % and about 50 vol. % of the processing gas.
- 13. A method for processing a substrate, comprising:
positioning the substrate on a support member in a processing chamber, wherein the substrate has a metal layer formed thereon and a resist layer formed on the metal layer; introducing a processing gas comprising (i) hydrogen chloride, (ii) an oxygen containing gas, and (iii) another chlorine containing gas into the processing chamber, wherein the oxygen containing gas comprises between about 5 vol % and about 50 vol % of the processing gas; maintaining a chamber pressure between about 2 milliTorr and about 25 millitorr; delivering power to the processing chamber to generate a plasma; and etching exposed portions of the metal layer and selectively removing the metal layer at a removal rate ratio of metal layer to resist of about 2:1 or greater.
- 14. The method of claim 13, wherein the conformal metal layer comprises chromium.
- 15. The method of claim 13, wherein the oxygen containing gas is selected from the group of oxygen (O2), carbon monoxide (CO), carbon dioxide (CO2), and combinations thereof and the another chlorine containing gas is selected from the group of chlorine (Cl2), silicon tetrachloride (SiCl4), boron trichloride (BCl3), and combinations thereof.
- 16. The method of claim 13, wherein the oxygen containing gas comprises between about 5 vol. % and about 30 vol. % of the processing gas.
- 17. The method of claim 13, wherein the processing gas further comprises an inert gas selected from the group of helium, argon, xenon, neon, krypton, and combinations thereof.
- 18. The method of claim 13, wherein the substrate is maintained at a temperature between about 50° C. and about 150° C. and the processing chamber is maintained at a pressure between about 10 milliTorr and about 20 milliTorr.
- 19. The method of claim 13, wherein delivering power to the processing chamber comprises applying a source RF power between about 250 Watts and about 700 Watts.
- 20. The method of claim 13, further comprising applying a bias power to the support member of about 50 Watts or less.
- 21. The method of claim 13, wherein the molar ratio of hydrogen chloride to another chlorine containing gas is between about 9:1 and 1:9.
- 22. The method of claim 13, wherein the molar ratio of hydrogen chloride to another chlorine containing gas is between about 1:5 and about 3:2 and the oxygen containing gas comprises between about 8 vol. % and about 12 vol. % of the processing gas.
- 23. The method of claim 17, wherein etching the substrate comprises introducing hydrogen chloride, oxygen (O2), chlorine (Cl2), and helium, into a processing chamber, maintaining the processing chamber at a pressure between about 10 milliTorr and about 20 milliTorr, maintaining the substrate at a temperature between about 50° C. and about 150° C., and generating a plasma by supplying a source RF power between about 250 Watts and about 700 Watts to the processing chamber, wherein the molar ratio of hydrogen chloride to chlorine gas is between about 1:5 and 3:2 and the oxygen containing gas comprises between about 5 vol. % and about 30 vol. % of the processing gas.
- 24. A method for etching a substrate having a conformal metal layer formed on a silicon based substrate with a patterned resist material deposited on the conformal metal layer, the method comprising:
positioning the substrate on a support member in a processing chamber having a coil; introducing a processing gas comprising (i) hydrogen chloride, (ii) an oxygen containing gas, (iii) chlorine gas, and (iv) an inert gas, wherein the hydrogen chloride and chlorine gas have a molar ratio of hydrogen chloride to chlorine gas between about 1:5 and 3:2 and the oxygen containing gas comprises between about 5 vol % and about 50 vol % of the processing gas; maintaining a chamber pressure between about 10 millitorr and about 20 milliTorr; supplying a source RF power of about 700 watts or less to the coil to generate a plasma in the processing chamber and supplying a bias power to the support member of about 50 Watts or less; maintaining the substrate at a temperature between about 50° C. and about 150° C.; and etching exposed portions of the conformal metal layer.
- 25. The method of claim 24, wherein the conformal metal layer comprises chromium.
- 26. The method of claim 24, wherein the oxygen containing gas comprises between about 5 vol. % and about 30 vol. % of the processing gas.
- 27. The method of claim 24, wherein the oxygen containing gas is selected from the group of oxygen (O2), carbon monoxide (CO), carbon dioxide (CO2), and combinations thereof and the inert gas is selected from the group of helium, argon, xenon, neon, krypton, and combinations thereof.
- 28. The method of claim 24, wherein delivering power to the processing chamber comprises applying a source RF power between about 250 Watts and about 700 Watts.
- 29. The method of claim 24, wherein the molar ratio of hydrogen chloride to chlorine gas is between about 3:7 and about 1:1.
- 30. The method of claim 25, wherein the resist material and metal layer is removed at a removal rate ratio of metal layer to resist of about 2:1 or greater.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application claims priority to U.S. Provisional Patent Application Serial No. 60/317,046, filed Sep. 4, 2001, which is incorporated herein by reference.
Provisional Applications (1)
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Number |
Date |
Country |
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60317046 |
Sep 2001 |
US |