Claims
- 1. A method for fabricating an electrode structure comprising a step of forming an electrode layer on a p-type AlxGayIn1-x-yN(0≦x≦1, 0≦y≦1, x+y≦1) semiconductor layer,wherein the semiconductor layer is doped with an acceptor impurity and hydrogen is introduced into the semiconductor layer, and wherein the electrode layer is formed by depositing a hydrogen absorbing metal which Is selected from a group consisting of Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Yb, Ti, Zr, Hf, V, Nb, Ta, Pd, Gd, Tb, Dy, Ho, Er and Tm.
- 2. A method for fabricating an electrode structure according to claim 1, wherein the acceptor impurity is Mg.
- 3. A method for fabricating an electrode structure according to claim 1, wherein the semiconductor layer is formed by a MOCVD method.
- 4. A method for fabricating an electrode structure according to claim 1, further comprising a step of annealing the semiconductor layer and the electrode layer after the hydrogen absorbing metal is deposited on the semiconductor layer.
- 5. A method for fabricating an electrode structure according to claim 4, wherein the annealing temperature is in the range from 300 to 1000° C.
Priority Claims (1)
Number |
Date |
Country |
Kind |
6-167124 |
Jul 1994 |
JP |
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CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a divisional application of patent application Ser. No. 09/287,538, filed Apr. 6, 1999, now U.S. Pat. No. 6,222,204, which is a continuation of patent application Ser. No. 08/892,868, filed Jul. 15, 1997, now U.S. Pat. No. 5,966,629, which is a divisional of patent application Ser. No. 08/504,101, filed Jul. 19, 1995, now U.S. Pat. No. 5,701,435.
US Referenced Citations (11)
Foreign Referenced Citations (7)
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5-291621 |
Nov 1993 |
JP |
5-315647 |
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JP |
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Dec 1993 |
JP |
6-069546 |
Mar 1994 |
JP |
6-077537 |
Mar 1994 |
JP |
6-152072 |
May 1994 |
JP |
6-069546 |
Nov 1994 |
JP |
Non-Patent Literature Citations (2)
Entry |
Lin et al. (1994). “Low Resistance Ohmic Contacts On Wide Band-Gap GaN,” Appl. Phys. Lett. 64:1003-1005. |
Nakamura, S. et al (1993). “P-GaN/N-InGaN/N-GaN Double Heterostructure Blue-Light-Emitting Diodes,” Jpn. J. Appl. Phys. 32:L8-L11. |
Continuations (1)
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Number |
Date |
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Parent |
08/892868 |
Jul 1997 |
US |
Child |
09/287538 |
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US |