Kendall, Don, "On Etching Very Narrow Grooves in Silicon", Applied Physics Letters, vol. 26, No. 4, Feb. 15, 1975, pp. 195-198. |
Baliga et al., "The Insulated Gate Transistor: A New Three-Terminal MOS Controlled Bipolar Power Device", IEEE Transactions, vol. ED-31, No. 6, 6/84, pp. 821-828. |
Pshaenich, Al, "The MOS SCR, A New Thyristor Technology", Engineering Bulletin EB-103, Motorola Inc., 1982, 5 pages. |
U.S. patent application Ser. No. 811,925, Cogan et al., "High Density Vertical DMOS Transistor", filed 12/19/85. |