Methods of fabricating a memory device

Abstract

A memory device comprising a vertical transistor includes a digit line that is directly coupled to the source regions of each memory cell. Because an electrical plug is not used to form a contact between the digit line and the source regions, a number of fabrication steps may be reduced and the possibility for manufacturing defects may also be reduced. In some embodiments, a memory device may include a vertical transistor having gate regions that are recessed from an upper portion of a silicon substrate. With the gate regions recessed from the silicon substrate, the gate regions are spaced further from the source/drain regions and, accordingly, cross capacitance between the gate regions and the source/drain regions may be reduced.

Description

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to microelectronic devices and related fabrication methods. More particularly, this invention relates to a memory device having a digit line that is directly coupled to a transistor source.

2. Description of the Related Art

Since the introduction of the digital computer, electronic storage devices have been a vital resource for the retention of data. Conventional semiconductor electronic storage devices, such as Dynamic Random Access Memory (DRAM), typically incorporate capacitor and transistor structures in which the capacitors temporarily store data based on the charged state of the capacitor structure. In general, this type of semiconductor Random Access Memory (RAM) often requires densely packed capacitor structures that are easily accessible for electrical interconnection.

A DRAM cell typically comprises a charge storage capacitor (or cell capacitor) coupled to an access device, such as a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET, or simply FET). These access devices functions to apply or remove charge on the capacitor, thus affecting a logical state defined by the stored charge. The amount of charge stored on the capacitor is determined by the electrode (or storage node) area and the interelectrode spacing. The conditions of DRAM operation such as operating voltage, leakage rate and refresh rate, will generally mandate that a certain minimum charge be stored by the capacitor.

FETs are widely used in integrated circuit devices including logic, memory and/or microprocessor devices that are used in consumer and/or industrial applications. As the integration density of integrated circuit FETs continues to increase, it may be desirable to continue to shrink the dimensions of the FETs. Conventionally, features of integrated circuit FETs may be formed on a microelectronic substrate, such as silicon semiconductor substrate, using photolithography and etching. As the minimum feature size is reduced, conventional fabrication techniques must also evolve in order to accurately fabricate the reduced size features. In some embodiments, fabrication of memory devices may be improved by reducing the number of processing steps involved in the fabrication process. In addition, improved transistor and charge storage devices may also decrease the manufacturing complexity, while maintaining or increasing the accuracy of the manufacturing process.

SUMMARY OF THE INVENTION

In one embodiment, a memory device comprising a vertical transistor includes a digit line that is directly coupled to the source regions of each memory cell. In typical prior art memory devices, an electrical plug is deposited on an upper surface of the source regions and the digit line is electrically coupled to the electrical plug. By removing the electrical plug from the transistor design, processing steps are removed and the possibility for manufacturing defects is also reduced. Exemplary methods for fabricating a memory device having a source region configured to be directly coupled to a digit line are described below with respect to the figures.

In another embodiment, a memory device comprising a vertical transistor includes gate regions that are recessed from an upper portion of a silicon substrate. With the gate regions recessed from the silicon substrate, the gate regions are spaced further from the source/drain regions and then in prior art vertical transistors and, accordingly, cross capacitance between the gate regions and the source/drain regions is reduced. By reducing cross capacitance between the gate region and the source/drain regions, the improved memory device design may increase accuracy of the memory device. Exemplary methods for fabricating a memory device having a recessed gate region are described below with respect to the figures.

In one embodiment, a memory device comprises a semiconductor substrate having a first surface, a recessed gate formed in the substrate and defining a first and second lateral sides, a first source/drain region formed on the first surface of the semiconductor substrate adjacent the first lateral side of the recessed gate, a second source/drain region formed on the first surface of the semiconductor substrate adjacent the second lateral side of the recessed gate, wherein application of a voltage to the recessed gate results in formation of a conductive channel between the first and second source/drain regions along a path that is recessed into the semiconductor substrate, a charge storage device formed above the semiconductor substrate, wherein the charge storage device is electrically coupled to the first source/drain region, and a conductive data line interposed between the charge storage device and the first surface of the semiconductor substrate wherein the conductive data line comprises a first portion that extends at a first height above the first surface of the semiconductor substrate and a second portion that extends downward from the first portion to electrically contact the second source/drain region, and wherein the first and second portions are formed of the same material.

In another embodiment, a method of fabricating a memory device comprises forming a semiconductor substrate having a first surface, forming a recessed gate in the substrate, wherein the recessed gate defines a first and second lateral sides, forming a first source/drain region on the first surface of the semiconductor substrate adjacent a first lateral side of the recessed gate, forming a second source/drain region on the first surface of the semiconductor substrate adjacent a second lateral side of the recessed gate, wherein application of a voltage to the gate results in the formation of a conductive channel between the first and second source/drain regions along a path that is recessed into the semiconductor substrate, forming a conductive data line between the charge storage device and the first surface of the semiconductor substrate, wherein the conductive data line comprises a first portion that extends a first height above the first surface of the semiconductor substrate and a second portion that extends downward from the first portion to electrically contact the second source/drain region, and wherein the first and second portions are formed of the same material, and forming a charge storage device above the semiconductor substrate, wherein the charge storage device is electrically coupled to the first source/drain region.

In another embodiment, a memory device comprises a semiconductor substrate, a vertically extending gate region recessed in the substrate, a source region positioned on a first side of the gate, the source region being formed at least partially in the semiconductor substrate, a drain region positioned on a second side of the gate, wherein the second side is opposite the first side, and a digit line contact directly electrically connected to the source region and directly electrically connected to a digit line contact of the memory device.

In another embodiment, a memory device comprises a source region, a drain region, a gate region separating the source and drain regions, and means for directly electrically coupling a digit line electrode of the memory device to the source region.

In another embodiment, a memory array comprises a plurality of memory cells. In one embodiment, the array comprises a semiconductor substrate having a first surface, a plurality of recessed gates formed in the substrate, each defining respective first and second lateral sides, a plurality of first source/drain regions formed on the first surface of the semiconductor substrate adjacent respective first lateral sides of each recessed gate, a plurality of second source/drain regions formed on the first surface of the semiconductor substrate adjacent respective second lateral sides of each recessed gate, wherein application of a voltage to each gate results in the formation of a conductive channel between the respective first and second source/drain regions on either side of the gate along a path that is recessed into the semiconductor substrate, a plurality of charge storage devices formed above the semiconductor substrate, wherein the charge storage devices are electrically coupled to respective first source/drain regions, and a plurality of conductive data lines interposed between each the charge storage devices and the first surface of the semiconductor substrate. In one embodiment, the conductive data lines each comprise a first portion that extends at a first height above the first surface of the semiconductor substrate, and a second portion that extends downward from the first portion to electrically contact the second source/drain region.

In another embodiment, a memory device comprises a semiconductor substrate having a first surface, a recessed gate that is formed in the substrate so as to be spaced a first distance from the first surface, wherein the recessed gate defines a first and second lateral sides, a first source/drain region formed on the first surface of the semiconductor substrate adjacent a first lateral side of the recessed gate, a second source/drain region formed on the first surface of the semiconductor substrate adjacent a second lateral side of the recessed gate wherein the application of voltage to the gate results in the formation of a conductive channel between the first and second source/drain regions along a path that is recessed into the semiconductor substrate and wherein the first distance is selected such that the gate structure is substantially located below the first and second source/drain regions so as to reduce the cross-capacitance between the gate and the first and second source/drain regions, a charge storage device formed above the semiconductor substrate wherein the charge storage device is electrically coupled to the first source/drain region, and a conductive data line interposed between the charge storage device and the first surface of the semiconductor substrate wherein the conductive data line electrically couples to the charge storage device when the gate is activated so as to transmit a signal indicative of the charge state of the charge storage device.

In another embodiment, a memory device comprises a semiconductor substrate having a top surface, an active area positioned on a first side of the gate, the active area being formed in the semiconductor substrate, and a vertically extending gate positioned proximate the active area, wherein a top surface of the gate is elevationally below the top surface of the semiconductor substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a top view of a portion of a memory device at an initial processing stage.

FIG. 2 is a cross-sectional view taken a long line 2-2 of FIG. 1.

FIG. 3 is a top view of the memory device illustrated in FIG. 1 at a subsequent processing stage.

FIG. 4 is a cross-sectional view of the memory device illustrated in FIG. 1 at a subsequent processing stage.

FIG. 5 is a top view of the memory device 10 at a processing stage subsequent to that of FIG. 3.

FIG. 6 is a cross-sectional view of the memory device 10 at a processing stage subsequent to that of FIG. 4.

FIG. 7 is a top view of the memory device 10 rotated 90° from the embodiment illustrated in FIG. 5.

FIG. 8 is a cross-sectional view of the memory device 10 rotated 90° from the embodiment illustrated in FIG. 6.

FIG. 9 is a top view of the memory device 10 at a processing stage subsequent to that of FIG. 5.

FIG. 10 is a cross-sectional view of the memory device 10 at a processing stage subsequent to that of FIG. 6.

FIG. 11 is a top view of the memory device 10 rotated 90° from the embodiment illustrated in FIG. 9.

FIG. 12 is a cross-sectional view of the memory device 10 rotated 90° from the embodiment illustrated in FIG. 10.

FIG. 13 is a top view of the memory device 10 at a processing stage subsequent to that of FIG. 9.

FIG. 14 is a cross-sectional view of the memory device 10 at a processing stage subsequent to that of FIG. 10.

FIG. 15 is a top view of the memory device 10 rotated 90° from the embodiment illustrated in FIG. 13.

FIG. 16 is a cross-sectional view of the memory device 10 rotated 90° from the embodiment illustrated in FIG. 14.

FIG. 17 is a top view of the memory device 10 at a processing stage subsequent to that of FIG. 13.

FIG. 18 is a cross-sectional view of the memory device 10 at a processing stage subsequent to that of FIG. 14.

FIG. 19 is a top view of the memory device 10 rotated 90° from the embodiment illustrated in FIG. 17.

FIG. 20 is a cross-sectional view of the memory device 10 rotated 90° from the embodiment illustrated in FIG. 18.

FIG. 21 is a top view of the memory device 10 at a processing stage subsequent to that of FIG. 17.

FIG. 22 is a cross-sectional view of the memory device 10 at a processing stage subsequent to that of FIG. 18.

FIG. 23 is a top view of the memory device 10 rotated 90° from the embodiment illustrated in FIG. 21.

FIG. 24 is a cross-sectional view of the memory device 10 rotated 90° from the embodiment illustrated in FIG. 22.

FIG. 25 is a top view of the memory device 10 at a processing stage subsequent to that of FIG. 21.

FIG. 26 is a cross-sectional view of the memory device 10 at a processing stage subsequent to that of FIG. 22.

FIG. 27 is a top view of the memory device 10 rotated 90° from the embodiment illustrated in FIG. 25.

FIG. 28 is a cross-sectional view of the memory device 10 rotated 90° from the embodiment illustrated in FIG. 26.

FIG. 29 is a top view of the memory device 10 at a processing stage subsequent to that of FIG. 25.

FIG. 30 is a cross-sectional view of the memory device 10 at a processing stage subsequent to that of FIG. 26.

FIG. 31 is a top view of the memory device 10 rotated 90° from the embodiment illustrated in FIG. 29.

FIG. 32 is a cross-sectional view of the memory device 10 rotated 90° from the embodiment illustrated in FIG. 30.

FIG. 33 is a top view of the memory device 10 at a processing stage subsequent to that of FIG. 29.

FIG. 34 is a cross-sectional view of the memory device 10 at a processing stage subsequent to that of FIG. 30.

FIG. 35 is a top view of the memory device 10 rotated 90° from the embodiment illustrated in FIG. 33.

FIG. 36 is a cross-sectional view of the memory device 10 rotated 90° from the embodiment illustrated in FIG. 34.

FIG. 37 is a top view of the memory device 10 at a processing stage subsequent to that of FIG. 33.

FIG. 38 is a cross-sectional view of the memory device 10 at a processing stage subsequent to that of FIG. 34.

FIG. 39 is a top view of the memory device 10 rotated 90° from the embodiment illustrated in FIG. 37.

FIG. 40 is a cross-sectional view of the memory device 10 rotated 90° from the embodiment illustrated in FIG. 38.

FIG. 41 is a top view of the memory device 10 at a processing stage subsequent to that of FIG. 37.

FIG. 42 is a cross-sectional view of the memory device 10 at a processing stage subsequent to that of FIG. 38.

FIG. 43 is a top view of the memory device 10 rotated 90° from the embodiment illustrated in FIG. 41.

FIG. 44 is a cross-sectional view of the memory device 10 rotated 90° from the embodiment illustrated in FIG. 42.

FIG. 45 is a top view of the memory device 10 at a processing stage subsequent to that of FIG. 41.

FIG. 46 is a cross-sectional view of the memory device 10 at a processing stage subsequent to that of FIG. 42.

FIG. 47 is a top view of the memory device 10 rotated 90° from the embodiment illustrated in FIG. 45.

FIG. 48 is a cross-sectional view of the memory device 10 rotated 90° from the embodiment illustrated in FIG. 46.

FIG. 49 is a cross-sectional view of the memory device 10 (at the same orientation as FIG. 46) at a subsequent processing stage.

FIG. 50 is a cross-sectional view of the memory device 10 (at the same orientation as FIG. 48) at a subsequent processing stage.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

Embodiments of the invention will now be described with reference to the accompanying figures, wherein like numerals refer to like elements throughout. The terminology used in the description presented herein is not intended to be interpreted in any limited or restrictive manner, simply because it is being utilized in conjunction with a detailed description of certain specific embodiments of the invention. Furthermore, embodiments of the invention may include several novel features, no single one of which is solely responsible for its desirable attributes or which is essential to practicing the inventions herein described.

FIGS. 1 and 2 illustrate a semiconductor substrate 12 having shallow trench isolation (STI) regions 14. More particularly, FIG. 1 is a top view of a portion of a memory device 10 at an initial processing stage, wherein the memory device 10 includes the substrate 12 patterned with STI regions 14 and pillars 16. As illustrated in FIG. 1, the STI regions 14 and pillars 16 alternate in the substrate 12. FIG. 2 is a cross-sectional view taken a long line 2-2 of FIG. 1. As illustrated in FIG. 2, the STI regions 14 form pillars 16 in the substrate 12.

FIGS. 3 and 4 are top and cross-sectional views, respectively, of the memory device 10 at processing stage subsequent to the embodiment illustrated in FIGS. 1 and 2. As illustrated in FIGS. 3 and 4, a nitride layer 18 has been deposited on the upper services of the pillars 16 and STI regions 14. The dashed lines in FIG. 3 indicate surfaces that are not visible from the top view. Thus, the pillars 16 and STI regions 14 are not visible from the top view illustrated in FIG. 3, due to the deposition of nitride layer 18 on top of these surfaces. In one embodiment, the nitride layer 18 has a thickness in the range of about 2000 to 3000 Angstroms. In other embodiments, however, the thickness of the nitride layer 18 may be adjusted according to various design parameters.

FIGS. 5-8 are views of the memory device 10 at a processing stage subsequent to that of FIGS. 3 and 4. More particularly, FIGS. 5 and 6 are top and cross-sectional views, respectively, and FIGS. 7 and 8 are top and cross-sectional views, respectively, rotated 90° from the embodiments illustrated in FIGS. 5 and 6. As illustrated in FIG. 8, for example, the nitride layer 18 has been patterned and etched to form trenches 20 in the nitride layer 18. In the embodiment of FIG. 8, the trenches 20 extend to an upper surface 22 of the substrate 12. The trenches 20 also expose isolation region portions 24 of the STI regions 14. As illustrated in FIGS. 5-8, the nitride layer 18 is now patterned so that nitride runners (designated with numeral 18) extend vertically from the substrate 12 and are generally separated by the trenches 20 and are parallel to one another. As illustrated in FIG. 7, for example, the upper surface portions 22 of the substrate 12 are generally surrounded by the isolation region portions 24 and the nitride runners 18. In one embodiment, the upper surface portions 22 are generally shaped as squares.

FIGS. 9-12 are views of the memory device 10 at a processing step subsequent to that of FIGS. 5-8. More particularly, FIGS. 9 and 10 are top and cross-sectional views, respectively, of the memory device 10 and FIGS. 11 and 12 are top and cross-sectional views, respectively, of the memory device 10 rotated 90° from the embodiments illustrated in FIGS. 9 and 10. As illustrated in FIG. 10, for example, isolation region portions 24 (FIG. 6) are etched below the upper surface portions 22 of substrate 12 in order to expose recessed surfaces 26 of the STI regions 14. In one embodiment, the isolation region portions 24 are etched using a reactive ion etch (RIE) process to selectively etch material 14 relative to the nitride runners 18. As shown in FIG. 10, the etch process exposes sidewalls 27 of the substrate 12 which were originally covered by an insulative material deposited in the STI regions 14. In one embodiment, the recessed surfaces 26 are in the range of about 500 to 1500 Angstroms below the upper surface portions 22 of the substrate 12. In another embodiment, the recessed surfaces 26 are in the range of about 800 to 1200 Angstroms below the upper surface portions 22 of the substrate 12. In other embodiments, the recessed surfaces 26 may extend other distances below the upper surface portions 22.

In one embodiment, after the recessed surfaces 26 are exposed using an etching process, for example, residual oxide on the sidewalls 27 and upper surface portions 22 is removed. In one embodiment, a wet hydrofluoric (HF) etch is used to remove these residual oxides. In other embodiments, other clean etches may be used in order to achieve similar results.

FIGS. 13-16 are views of the memory device 10 at a processing step subsequent to that of FIGS. 9-12. More particularly, FIGS. 13 and 14 are top and cross-sectional views, respectively, of the memory device 10 and FIGS. 15 and 16 are top and cross-sectional views, respectively, of the memory device 10 rotated 90° from the embodiments illustrated in FIGS. 13 and 14. As illustrated in FIGS. 14 and 16, for example, a nitride liner 28 has been deposited on the upper surface 22 of the substrate 12, the recessed surfaces 26, and the sidewalls 27. In one embodiment, the nitride liner 28 has a thickness in the range of about 30 to 100 Angstroms.

After depositing the nitride liner 28, a sacrificial layer 30, such as a spin-on-glass (SOG), for example, is deposited in the trenches 20 (FIG. 12) between the nitride runners 18. In other embodiments, the sacrificial layer may comprise other materials, such as borophosphorous silica glass (BPSG) and/or TEOS. In one embodiment, the sacrificial layer 30 is etched so that the sacrificial layer 30 is planar with the nitride runners 18. In one embodiment, the sacrificial layer 30 is removed using a chemical mechanical polishing (CMP) process; however other etching processes may be used in order to adjust a height of the sacrificial layer 30.

FIGS. 17-20 are views of the memory device 10 at a processing step subsequent to that of FIGS. 13-16. More particularly, FIGS. 17 and 18 are top and cross-sectional views, respectively, of the memory device 10 and FIGS. 19 and 20 are top and cross-sectional views, respectively, of the memory device 10 rotated 90° from the embodiments illustrated in FIGS. 17 and 18. As illustrated in FIG. 18, for example, a portion of the sacrificial layer 30 is selectively etched to form opening 31 and to expose the nitride liner 28 over upper surface portions 22 of substrate 12. The sacrificial layer 30 is selectively etched so that columns 30 remain extending upward above the STI regions 14. As shown in FIG. 18, the exposed portions of the nitride liner 28 on the upper surface portions 22 are removed to expose the upper surface portions 22 of the silicon substrate 12 between the columns 30. In one embodiment, a selective nitride etch is used to etch the nitride liner 28 from the upper surface portions 22 of the substrate 12. After removing portions of the sacrificial layer 30 and the nitride liner 28 as described above, openings 31 extend to expose the upper surface portions 22. In one embodiment, the exposed upper surface portions 22 function as active areas for the memory device 10.

FIGS. 21-24 are views of the memory device 10 at a processing step subsequent to that of FIGS. 17-20. More particularly, FIGS. 21 and 22 are top and cross-sectional views, respectively, of the memory device 10 and FIGS. 23 and 24 are top and cross-sectional views, respectively, of the memory device 10 rotated 90° from the embodiments illustrated in FIGS. 21 and 22. As illustrated in FIGS. 21-24, insulative spacers 34 have been formed on either side of the sacrificial layer 30 (e.g., FIG. 22) and the nitride runners 18 (e.g., FIG. 24). In one embodiment, the insulative spacers 34 comprise Tetraethyl Orthosilicate (TEOS).

In one embodiment, a layer of insulative material is deposited over the silicon substrate 12 in order to fill the openings 31 (FIG. 18). The insulative material is then anisotropically etched to form the sacrificial insulative spacers 34. For example, in one embodiment, a reactive ion etch is used to remove portions of the insulative material, leaving only about 200 to 500 Angstroms of material surrounding the nitride runners 18 and the sacrificial layer 30. As illustrated in FIGS. 21 and 23, for example, the etching of the insulative material leaves a generally cylindrical openings 32 that expose a smaller surface area of the upper surface portion 22. In one embodiment, the insulative spacers 34 improve the critical dimensions possible for subsequently formed structures that are formed over or upon upper surface portions 22 of the silicon substrate 12.

FIGS. 25-28 are views of the memory device 10 at a processing step subsequent to that of FIGS. 21-24. More particularly, FIGS. 25 and 26 are top and cross-sectional views, respectively, of the memory device 10 and FIGS. 27 and 28 are top and cross-sectional views, respectively, of the memory device 10 rotated 90° from the embodiments illustrated in FIGS. 25 and 26. As illustrated in FIG. 26, for example, an additional nitride material 33 is deposited inside the spacers 34 forming nitride plugs 38 that fill the openings 32 (FIG. 22). Nitride 33 may be formed by depositing a nitride material in the cylindrical openings 32 and then selectively etching (not shown) the nitride material to form nitride plugs 38 inside the sacrificial insulative spacers 34. In one embodiment, the nitride plugs 38 will have a thickness in the range of about 500 to 1200 Angstroms between the spacers 34 after such selective etching (not shown in FIGS. 25-28).

FIGS. 29-32 are views of the memory device 10 at a processing step subsequent to that of FIGS. 25-28. More particularly, FIGS. 29 and 30 are top and cross-sectional views, respectively, of the memory device 10 and FIGS. 31 and 32 are top and cross-sectional views, respectively, of the memory device 10 rotated 90° from the embodiments illustrated in FIGS. 29 and 30.

In the embodiment of FIGS. 29-32, nitride plugs 38 extend upward from the exposed upper surface portions 22 of the silicon substrate 12 in the cylindrical openings. In one embodiment, upper surfaces of the nitride material 33 of plugs 38 (FIG. 28), nitride runners 18, and insulative spacers 34 are removed using a blanket nitride etch or CMP in order to form the separated nitride plugs 38 from formally interconnected material 33 (FIGS. 25-28). In one embodiment, the nitride plugs 38 are elevationally level with, or below, upper surfaces 47 of the nitride runners 18.

FIGS. 33-36 are views of the memory device 10 at a processing step subsequent to that of FIGS. 29-32. More particularly, FIGS. 33 and 34 are top and cross-sectional views, respectively, of the memory device 10 and FIGS. 35 and 36 are top and cross-sectional views, respectively, of the memory device 10 rotated 90° from the embodiments illustrated in FIGS. 33 and 34. As illustrated in FIGS. 34 and 36, for example, the sacrificial layers 30 and the insulative spacers 34 (shown in FIG. 30, for example) have been removed. In one embodiment, the sacrificial layer 30 and insulative spacers 34 are entirely removed using an etching process, such as a diluted hydrofluoric acid etch and/or a buffered oxide etch. In other embodiments, other materials may be used to selectively etch the sacrificial layer 30 and the insulative spacers 34. In an advantageous embodiment, the selective etch stops etching at nitride and silicon materials, such as the nitride liner 28, nitride runners 18, and upper surface portions 22 of silicon substrate 12. As shown in FIG. 34, the selective etching forms openings 42 that are defined by nitride liner 28 and nitride runners 18.

FIGS. 37-40 are views of the memory device 10 at a processing step subsequent to that of FIGS. 33-36. More particularly, FIGS. 37 and 38 are top and cross-sectional views, respectively, of the memory device 10 and FIGS. 39 and 40 are top and cross-sectional views, respectively, of the memory device 10 rotated 90° from the embodiments illustrated in FIGS. 37 and 38. At the processing stage illustrated in FIGS. 37-40, at least a portion of the nitride liner 28, the upper surface portions 22 of substrate 12, and the STI region 14 are removed using one or more etching processes. In one embodiment, portions of the nitride plugs 38 are also etched when the nitride liner 28, and substrate 12, and STI region 14 are etched as described above. Accordingly, in this embodiment, the height of the nitride plugs 38 is decreased due to this etching. After this etching is complete, an insulative film 52 is deposited on the exposed surfaces of the silicon substrate 12. After completion of these processing steps, which are discussed in further detail below, a channel 21 is created in the silicon substrate 12, wherein a length of the channel is determined by the depth of the etching.

In one embodiment, a dry/wet nitride punch etch, using, for example, H₃PO₄ solution, has been used to remove the nitride liner 28 (FIG. 34) from over the STI region 14, the sidewall of silicon substrate 12 and the upper surface portions 22 of silicon substrate 12.

In one embodiment, a selective dry etch is used to remove portions of the upper surface portions 22 adjacent the nitride plugs 38. The selective dry etch may also remove portions of the STI region 14, while leaving portions of the silicon substrate 12 directly below the nitride plugs 38. The portions of the silicon substrate 12 that remain below the nitride plugs 38 are hereinafter referred to as silicon support structures 46. In one embodiment, the support structures 46 are generally annular or cylindrical shaped, similar to the nitride plugs 38 which extend above the silicon support structures 46. As illustrated in FIG. 38, for example, the selective etching enlarges openings 42 (FIG. 34) to form enlarged openings 44. The enlarged openings 44 are defined by the silicon support structures 46, an upper surface 48 of the silicon substrate 12, and an upper surface 50 of the STI regions 14. In one embodiment, the etching process will remove slightly more of the silicon substrate 12 than the STI region 14. In this embodiment, the upper surface 48 of the silicon substrate 12 is slightly below the upper surface 50 of the STI regions 14.

After forming the enlarged openings 44, an insulative film 52 is grown over the exposed portions of the silicon substrate 12 and the silicon support structures 46. In one embodiment, the insulative film 52 comprises an oxide, such as silicon dioxide. Referring to FIG. 38, for example, the insulative film 52 can be seen covering the side walls of the nitride plugs 38 and the silicon support structures 46, as well as the upper surface 48 of the silicon substrate 12. In some embodiments, the insulative film serves as a gate oxide dielectric for transistors. An exemplary method of forming the dielectric may include CVD deposition of a low K material on the exposed silicon surfaces of the upper surface 48 of the silicon substrate 12, the silicon support structures 46, and the side walls of the nitride plugs 38.

In one embodiment, the silicon support structures 46 serve as a portion of a channel for transistors of the memory device 10. Accordingly, the length of the silicon support structures 46 defines a vertical length of the transistor channel 21. In the embodiments illustrated in FIGS. 37-40, because the transistor channel 21 extends perpendicularly to the orientation of substrate 12, the transistor channel 21 defines a channel of a vertical transistor.

FIGS. 41-44 are views of the memory device 10 at a processing step subsequent to that of FIGS. 37-40. More particularly, FIGS. 41 and 42 are top and cross-sectional views, respectively, of the memory device 10 and FIGS. 43 and 44 are top and cross-sectional views, respectively, of the memory device 10 rotated 90° from the embodiments illustrated in FIGS. 41 and 42. At the stage of processing illustrated in FIGS. 41-44, diffusion regions 41 have been formed below the nitride plugs 38 and transistor gates 54 have been formed over the insulative film 52. In one embodiment, the transistor gates 54 comprise word lines of the memory device 10, such as a DRAM.

In one embodiment, an implant method may be used to transfer a conductivity dopant through the nitride plugs 38 to the silicon substrate 12 directly beneath the nitride plugs 38. In another embodiment, an angle implant method may be used to form the diffusion regions 41. For example, Arsenic or Phosphorous may be implanted in the substrate 12, below the nitride plugs 38, angled from within the openings 44 (FIG. 38). Those of skill in the art will recognize that various alternative methods and doping materials may be used in forming the diffusions regions 41. Any suitable doping method may be used to create the diffusion regions 41. In one embodiment, the diffusion regions 41 are configured to serve as source/drain regions of a transistor device. More generally, the diffusion regions 41 may be used as electrical contacts between charge storage devices, such as capacitors, and other components of a transistor and/or a memory device.

In one embodiment, a conductive material 54, such as polysilicon, is deposited on the insulative film 52 and the STI region 14. In some embodiments, portions of the deposited conductive material may be removed by a polishing process, such as CMP, to an elevation below the silicon nitride plugs 38. For example, FIG. 42 illustrates the upper surfaces 55 of the transistor gate 54 about 1000 Angstroms below the upper surfaces 39 of the silicon nitride plugs 38.

In an advantageous embodiment, the transistor gates 54 are recessed from the silicon substrate so that the gate regions are spaced further from the source/drain regions of the transistor devices in the memory 10. In the embodiment of FIG. 42, for example, the transistor gates 54 are recessed below an upper surface of the substrate 12. In other embodiments, the transistor gates 54 are recessed about 500 Angstroms, or in the range of about 250 to 1,000 Angstroms, below an upper surface of the substrate 12. Accordingly, cross capacitance between the gate regions and the source/drain regions may be reduced, thus improving the accuracy of the memory device.

FIGS. 45-48 are views of the memory device 10 at a processing step subsequent to that of FIGS. 40-44. More particularly, FIGS. 45 and 46 are top and cross-sectional views, respectively, of the memory device 10 and FIGS. 47 and 48 are top and cross-sectional views, respectively, of the memory device 10 rotated 90° from the embodiments illustrated in FIGS. 45 and 46. At the processing stage illustrated in FIGS. 45-48, an insulative material 56 has been deposited atop the transistor gates 54 (FIGS. 45 and 46, for example). In addition, a conductivity dopant is implanted into the exposed surfaces of the silicon substrate 12 in order to form diffusion regions 59, which may be transistor sources or drains (FIGS. 47 and 48, for example).

In one embodiment, the insulative material 56 comprises spin-on-glass (SOG) and TEOS layers. Outermost portions of the insulative layer 56 may be removed by CMP or other planar etching methods to expose nitride runners 18. Next, the nitride runners 18 are patterned and selectively etched to form opening 62 that extend through portions of the nitride runners 18 down to upper surface portions 58 of substrate 12.

As illustrated in FIG. 48, for example, a conductivity implant is performed to provide a conductivity dopant into upper surface portions 58 of substrate 12 in order to form active areas 59. In one embodiment, the active areas 59 comprise source/drain regions of devices such as, for example, transistors.

FIGS. 49 and 50 are views of the memory device 10 at a processing step subsequent to that of FIGS. 45-48. More particularly, FIGS. 49 and 50 are cross-sectional views, respectively, of the memory device 10, where FIG. 49 is at the same orientation as FIG. 46 and FIG. 50 is at the same orientation as FIG. 48. FIGS. 49 and 50 illustrate transistors electrically coupled to charge storage devices. For example, exemplary transistor 69 is electrically coupled to exemplary capacitor 80 (FIG. 50). The transistor 69 and capacitor 80 combine to form an exemplary memory cell 103.

Those of skill in the art will recognize that a FET transistor typically comprises a gate, a gate dielectric, a source and drain, and a channel. In the embodiment of FIGS. 49 and 50, the transistor 69 comprises gate 54, gate dielectric 52, source/drain regions 41 and 59, and channel 21. FIG. 50 illustrates arrows in the channel 21 which indicate current flow between the source/drain region 59 and the source/drain region 41. Thus, in one embodiment, activation of the transistor 69 establishes a conductivity channel 21 from source/drain region 59 to source/drain region 41. In one embodiment, the source/drain region 59 comprises a transistor source and the source/drain region 41 comprises a transistor drain. In one embodiment, the source/drain region 59 comprises a transistor drain and the source/drain region 41 comprises a transistor source.

Several process steps may be performed in order to transform the partially complete memory device 10 illustrated in FIGS. 45-48 to the memory device 100 illustrated in FIGS. 49 and 50. Initially, at least portions of the insulative material 56, the silicon support structures 46, and the nitride plugs 38 are removed in order to expose the source/drain regions 41. Conductive material, such as polysilicon, for example, may then be deposited, forming an electrical contact 102 that couples with the capacitor 80, for example. In the embodiment of FIGS. 49 and 50, the transistor 69 includes intermediate structures that insulate portions of the transistor 69 from the capacitor 80. For example, the transistor 69 comprises a nitride cap 106 and insulative spacers 110 that are formed over the digit line 104. In one embodiment, a silicon dioxide layer 108 may also be deposited on the nitride caps 106. In one embodiment, the capacitor 80 comprises a capacitor dielectric 73 over a storage node 72 and a top cell plate 74 over the capacitor dielectric 73.

In the embodiment of FIGS. 49 and 50, a dielectric plug 63 is deposited above the transistor gates 54 and the active areas 59. In one embodiment, the dielectric plug 63 comprises an oxide material, such as silicon dioxide, for example. The dielectric plug 63 may then be patterned and etched to form contact holes that expose middle portions of the active areas 59. Metal stacks comprising polysilicon and/or silicide layers, for example, may then be deposited in the contact holes in order to form digit lines 104. Thus, the dielectric plug 63 moves the digit line 104 conductor away from the silicon support structures 46. Advantageously, the digit lines 104 directly contact the active areas 59 so that a conductive plug is not necessary to electrically couple the digit lines 104 with the active areas 59. Such conductive plugs are commonly formed in prior art transistors using epitaxial processes. By removing the need for an additional epitaxial process, the manufacturing defect rate may be decreased.

The foregoing description details certain embodiments of the invention. It will be appreciated, however, that no matter how detailed the foregoing appears in text, the invention can be practiced in many ways. As is also stated above, it should be noted that the use of particular terminology when describing certain features or aspects of the invention should not be taken to imply that the terminology is being re-defined herein to be restricted to including any specific characteristics of the features or aspects of the invention with which that terminology is associated. The scope of the invention should therefore be construed in accordance with the appended claims and any equivalents thereof.

Claims

1. A method of fabricating a memory device, the method comprising; forming a recessed gate within semiconductive material;forming a first source/drain region and a second source/drain region adjacent opposing lateral sides of the recessed gate, wherein application of a voltage to the gate results in the formation of a conductive channel between the first and second source/drain regions along a path that is within the semiconductive material;forming a charge storage device above the semiconductive material, wherein the charge storage device is electrically coupled to the first source/drain region;forming a conductive data line over the second source/drain region and which electrically connects to the second source/drain region; andforming a nitride-comprising cap over that portion of the conductive data line that is over the second source/drain region, the nitride-comprising cap extending laterally beyond sidewalls of the conductive data line over the second source/drain region.

2. The method of claim 1 comprising forming silicon dioxide over the nitride-comprising cap, the silicon dioxide extending laterally beyond sidewalls of the nitride cap.

3. The method of claim 2 comprising forming insulative spacers that are laterally over the sidewalls of the nitride-comprising cap, the silicon dioxide being elevationally over the insulative spacers.

4. The method of claim 1 wherein the conductive data line electrically and directly physically contacts the second source/drain region in the absence of any separately formed conductive plug extending between the second source/drain region and the conductive data line in a completed construction of the memory device.

5. The method of claim 1 comprising forming the first and second source/drain regions to have coplanar upper surfaces in the completed construction of the memory device.

6. The method of claim 1 comprising forming the charge storage device to comprise a capacitor.

7. The method of claim 1 comprising forming an upper surface of the gate to be elevationally below upper surfaces of each of the first and second source/drain regions.

8. The method of claim 7 comprising forming the upper surface of the gate to be elevationally closer to a lower surface of the second source/drain region than to the second source/drain region upper surface in the completed construction of the memory device.

9. The method of claim 1 comprising forming an upper surface of the gate to be elevationally closer to lower surfaces of each of the first and second source/drain regions than to an upper surface of the semiconductive material.

10. A method of fabricating a memory device, the method comprising; forming a recessed gate within semiconductive material;forming a first source/drain region and a second source/drain region adjacent opposing lateral sides of the recessed gate, wherein application of a voltage to the gate results in the formation of a conductive channel between the first and second source/drain regions along a path that is within the semiconductive material;forming a charge storage device above the semiconductive material, wherein the charge storage device is electrically coupled to the first source/drain region;forming dielectric material over the second source/drain region;patterning and etching the dielectric material to expose only a portion of the second/source drain region; andforming a conductive data line which electrically connects to the second source/drain region.

11. The method of claim 10 wherein the exposed portion is spaced from opposing lateral sides of the second source/drain region.

12. The method of claim 11 wherein the exposed portion is centered relative to the opposing lateral sides of the second source/drain region.

13. The method of claim 10 wherein the exposed portion is over a lateral center of the second source/drain region.

14. The method of claim 10 comprising forming insulative spacers that are laterally over sidewalls of the conductive data line.

15. The method of claim 10 wherein the conductive data line is formed over the second source/drain region, and forming a nitride-comprising cap over a portion of the conductive data line that is over the second source/drain region, the nitride-comprising cap extending laterally beyond sidewalls of the conductive data line over the second source/drain region.

16. The method of claim 10 comprising forming the charge storage device to comprise a container-shaped capacitor.

17. The method of claim 10 wherein the conductive data line electrically and directly physically contacts the second source/drain region in the absence of any separately formed conductive plug extending between the second source/drain region and the conductive data line in a completed construction of the memory device.

18. The method of claim 10 comprising forming the conductive data line to comprise polysilicon.

19. The method of claim 10 comprising forming the conductive data line to comprise silicide.

20. The method of claim 10 comprising forming the conductive data line to comprise polysilicon and silicide.