the transistor having a trench structure in the substrate

Industry

CPC
H01L27/10823

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/10823the transistor having a trench structure in the substrate

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 11,700,726
- Issue date Jul 11, 2023
- Samsung Electronics Co., Ltd.
- Jin Sub Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,670,700
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Young-Kwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having a landing area extends from first po...
- Patent number 11,665,887
- Issue date May 30, 2023
- NANYA TECHNOLOGY CORPORATION
- Chih-Wei Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having spacer capping pattern disposed...
- Patent number 11,665,883
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Inkyoung Heo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of fabricating the same
- Patent number 11,646,225
- Issue date May 9, 2023
- Samsung Electronics Co., Ltd.
- Myeong-Dong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory structure having a hexagonal shaped bit line contact dispose...
- Patent number 11,641,735
- Issue date May 2, 2023
- NANYA TECHNOLOGY CORPORATION
- Yu-Ying Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device using different crystallinities in stor...
- Patent number 11,631,677
- Issue date Apr 18, 2023
- Samsung Electronics Co., Ltd.
- Daeyoung Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and forming method thereof
- Patent number 11,626,408
- Issue date Apr 11, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Shuai Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having buried gates
- Patent number 11,626,409
- Issue date Apr 11, 2023
- Samsung Electronis Co., Ltd.
- Huijung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device with self-aligned landi...
- Patent number 11,621,265
- Issue date Apr 4, 2023
- NANYA TECHNOLOGY CORPORATION
- Te-Yin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried word line structure and manufacturing method thereof
- Patent number 11,610,892
- Issue date Mar 21, 2023
- Winbond Electronics Corp.
- Chang-Hung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of forming semiconductor devices
- Patent number 11,610,896
- Issue date Mar 21, 2023
- Samsung Electronics Co., Ltd.
- Daeik Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device using multipe photolitho...
- Patent number 11,610,898
- Issue date Mar 21, 2023
- Samsung Electronics Co., Ltd.
- Hyun-Chul Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic random access memory and method for manufacturing the dram...
- Patent number 11,610,611
- Issue date Mar 21, 2023
- Winbond Electronics Corp.
- Ting-Ting Ke
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device including insulating layers and method of manu...
- Patent number 11,605,714
- Issue date Mar 14, 2023
- Samsung Electronics Co., Ltd.
- Dong Kak Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method of fabricating the same
- Patent number 11,600,621
- Issue date Mar 7, 2023
- Samsung Electronics Co., Ltd.
- Kyooho Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method of fabricating the same
- Patent number 11,600,570
- Issue date Mar 7, 2023
- Samsung Electronics Co., Ltd.
- Hyo-Sub Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,594,538
- Issue date Feb 28, 2023
- Samsung Electronics Co., Ltd.
- Sang Ho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with composite dielectric structure and method...
- Patent number 11,594,539
- Issue date Feb 28, 2023
- NANYA TECHNOLOGY CORPORATION
- Tse-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors, memory cells and semiconductor constructions
- Patent number 11,594,611
- Issue date Feb 28, 2023
- Micron Technology, Inc.
- Durai Vishak Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and method of manufacturing the same
- Patent number 11,588,012
- Issue date Feb 21, 2023
- Samsung Electronics Co., Ltd.
- Jun-goo Kang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for preparing semiconductor memory device with air gaps betw...
- Patent number 11,587,934
- Issue date Feb 21, 2023
- NANYA TECHNOLOGY CORPORATION
- Chun-Cheng Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method of forming the same
- Patent number 11,587,933
- Issue date Feb 21, 2023
- Micron Technology, Inc.
- Toshiyasu Fujimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including insulating patterns and method for f...
- Patent number 11,574,915
- Issue date Feb 7, 2023
- Samsung Electronics Co., Ltd.
- Wooyoung Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices and methods of manufacturing the same
- Patent number 11,574,912
- Issue date Feb 7, 2023
- Samsung Electronics Co., Ltd.
- Augustin Jinwoo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device with protruding contact
- Patent number 11,574,911
- Issue date Feb 7, 2023
- NANYA TECHNOLOGY CORPORATION
- Chiang-Lin Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 11,574,913
- Issue date Feb 7, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Xiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device including wiring contact plugs
- Patent number 11,569,171
- Issue date Jan 31, 2023
- Samsung Electronics Co., Ltd.
- Yonghyeok Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM memory device having angled structures with sidewalls extendin...
- Patent number 11,569,242
- Issue date Jan 31, 2023
- Applied Materials, Inc.
- Sony Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatuses including passing word lines comprising a band offset m...
- Patent number 11,569,353
- Issue date Jan 31, 2023
- Micron Technology, Inc.
- Venkata Naveen Kumar Neelapala
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY CELL WITH IMPROVED INSULATING STRUCTURE
- Publication number 20240206155
- Publication date Jun 20, 2024
- NANYA TECHNOLOGY CORPORATION
- Chung-Lin HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE HAVING ULTRA-LIGHTLY DOPED REGION
- Publication number 20240196595
- Publication date Jun 13, 2024
- NANYA TECHNOLOGY CORPORATION
- Chung-Lin HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240188277
- Publication date Jun 6, 2024
- WINBOND ELECTRONICS CORP.
- Shih-Han Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240179891
- Publication date May 30, 2024
- WINBOND ELECTRONICS CORP.
- Hung-Yu WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME
- Publication number 20240153873
- Publication date May 9, 2024
- NANYA TECHNOLOGY CORPORATION
- Yu-Hsin WU
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE WITH ASSISTANCE FEATURES AND METHOD FOR FABRIC...
- Publication number 20240147703
- Publication date May 2, 2024
- NANYA TECHNOLOGY CORPORATION
- TSE-YAO HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING WORD LINE EMBEDDED IN GATE TRENCH
- Publication number 20240147699
- Publication date May 2, 2024
- Micron Technology, Inc.
- Toshiyasu Fujimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH PERIPHERAL GATE STRUCTURE AND METHOD FOR...
- Publication number 20240130102
- Publication date Apr 18, 2024
- NANYA TECHNOLOGY CORPORATION
- TSE-YAO HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240107743
- Publication date Mar 28, 2024
- Samsung Electronics Co., Ltd.
- Junhyeok AHN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID MANUFACTURING OF ACCESS TRANSISTORS FOR MEMORY
- Publication number 20240098965
- Publication date Mar 21, 2024
- Intel Corporation
- Abhishek A. Sharma
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240098978
- Publication date Mar 21, 2024
- NANYA TECHNOLOGY CORPORATION
- Jhen-Yu TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH BURIED GATE STRUCTURES AND METHOD FOR PRE...
- Publication number 20240088248
- Publication date Mar 14, 2024
- NANYA TECHNOLOGY CORPORATION
- TSE-YAO HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SUPPORTING LAYER AND METHOD FOR FABRICATI...
- Publication number 20240090198
- Publication date Mar 14, 2024
- NANYA TECHNOLOGY CORPORATION
- LIANG-PIN CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DEVICES, AND RELATED MEMORY DEVICES, ELECTRONIC SYS...
- Publication number 20240081048
- Publication date Mar 7, 2024
- Micron Technology, Inc.
- Yuri Ishizaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE STRUCTURES
- Publication number 20240074153
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Daniel Billingsley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEROF
- Publication number 20240074152
- Publication date Feb 29, 2024
- NANYA TECHNOLOGY CORPORATION
- Chiang-Lin SHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240064960
- Publication date Feb 22, 2024
- Fujian Jinhua Integrated Circuit Co., Ltd.
- Janbo Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE INCLUDING STRUCTURES IN MEMORY ARRAY REGION AND PERIP...
- Publication number 20240064972
- Publication date Feb 22, 2024
- Micron Technology, Inc.
- Si-Woo Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20240057315
- Publication date Feb 15, 2024
- Fujian Jinhua Integrated Circuit Co., Ltd.
- Yu-Cheng Tung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS FOR DRAM LEAKAGE REDUCTION
- Publication number 20240049443
- Publication date Feb 8, 2024
- Applied Materials, Inc.
- Armin Saeedi Vahdat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240049451
- Publication date Feb 8, 2024
- NANYA TECHNOLOGY CORPORATION
- YU-TING LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STRUCTURE
- Publication number 20240032278
- Publication date Jan 25, 2024
- NANYA TECHNOLOGY CORPORATION
- Jhen-Yu TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DOUBLE BIT CAPACITY AND METHOD FOR MANU...
- Publication number 20240023312
- Publication date Jan 18, 2024
- NANYA TECHNOLOGY CORPORATION
- YING-CHIEH LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING BURIED GATE ST...
- Publication number 20240015947
- Publication date Jan 11, 2024
- NANYA TECHNOLOGY CORPORATION
- Jhen-Yu TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH PASSING GATE
- Publication number 20240015951
- Publication date Jan 11, 2024
- NANYA TECHNOLOGY CORPORATION
- Jhen-Yu TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREOF
- Publication number 20230422466
- Publication date Dec 28, 2023
- Changxin Memory Technologies, Inc.
- Deyuan XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PREPARING MEMORY DEVICE WITH MULTILAYERED CAPACITOR DIEL...
- Publication number 20230413509
- Publication date Dec 21, 2023
- NANYA TECHNOLOGY CORPORATION
- CHIH-HSIUNG HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20230411476
- Publication date Dec 21, 2023
- NANYA TECHNOLOGY CORPORATION
- Jhen-Yu TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE WITH VOID-FREE CONDUCTIV...
- Publication number 20230413533
- Publication date Dec 21, 2023
- NANYA TECHNOLOGY CORPORATION
- CHENG-YAN JI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20230413534
- Publication date Dec 21, 2023
- Micron Technology, Inc.
- Kunihiro Tsubomi
- H01 - BASIC ELECTRIC ELEMENTS

the transistor having a trench structure in the substrate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device

Semiconductor device

Semiconductor structure having a landing area extends from first po...

Semiconductor memory device having spacer capping pattern disposed...

Semiconductor devices and methods of fabricating the same

Memory structure having a hexagonal shaped bit line contact dispose...

Semiconductor memory device using different crystallinities in stor...

Memory device and forming method thereof

Semiconductor devices having buried gates

Method for fabricating semiconductor device with self-aligned landi...

Buried word line structure and manufacturing method thereof

Semiconductor devices and methods of forming semiconductor devices

Method of fabricating semiconductor device using multipe photolitho...

Dynamic random access memory and method for manufacturing the dram...

Semiconductor device including insulating layers and method of manu...

Semiconductor memory device and method of fabricating the same

Semiconductor memory device and method of fabricating the same

Semiconductor device and method of fabricating the same

Semiconductor device with composite dielectric structure and method...

Transistors, memory cells and semiconductor constructions

Semiconductor devices and method of manufacturing the same

Method for preparing semiconductor memory device with air gaps betw...

Semiconductor memory device and method of forming the same

Semiconductor device including insulating patterns and method for f...

Memory devices and methods of manufacturing the same

Method for fabricating semiconductor device with protruding contact

Semiconductor structure and manufacturing method thereof

Semiconductor memory device including wiring contact plugs

DRAM memory device having angled structures with sidewalls extendin...

Apparatuses including passing word lines comprising a band offset m...

Patents Applicationslast 30 patents

MEMORY CELL WITH IMPROVED INSULATING STRUCTURE

MEMORY DEVICE HAVING ULTRA-LIGHTLY DOPED REGION

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME

SEMICONDUCTOR DEVICE WITH ASSISTANCE FEATURES AND METHOD FOR FABRIC...

SEMICONDUCTOR DEVICE HAVING WORD LINE EMBEDDED IN GATE TRENCH

SEMICONDUCTOR DEVICE WITH PERIPHERAL GATE STRUCTURE AND METHOD FOR...

SEMICONDUCTOR DEVICE

HYBRID MANUFACTURING OF ACCESS TRANSISTORS FOR MEMORY

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE WITH BURIED GATE STRUCTURES AND METHOD FOR PRE...

SEMICONDUCTOR DEVICE WITH SUPPORTING LAYER AND METHOD FOR FABRICATI...

MICROELECTRONIC DEVICES, AND RELATED MEMORY DEVICES, ELECTRONIC SYS...

CONDUCTIVE STRUCTURES

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEROF

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

MEMORY DEVICE INCLUDING STRUCTURES IN MEMORY ARRAY REGION AND PERIP...

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

DEVICES AND METHODS FOR DRAM LEAKAGE REDUCTION

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

MEMORY STRUCTURE

SEMICONDUCTOR DEVICE HAVING DOUBLE BIT CAPACITY AND METHOD FOR MANU...

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING BURIED GATE ST...

SEMICONDUCTOR DEVICE WITH PASSING GATE

SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREOF

METHOD FOR PREPARING MEMORY DEVICE WITH MULTILAYERED CAPACITOR DIEL...

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

METHOD OF FABRICATING SEMICONDUCTOR DEVICE WITH VOID-FREE CONDUCTIV...

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME