A method of forming a relief image on a substrate including: applying over a substrate a layer of an antireflective coating; and vacuum processing the antireflective coating. This method reduces the number of pinhole defects present in the antireflective coating.
Description
BRIEF DESCRIPTION OF THE DRAWING
The sole FIGURE is a pictorial representation (through cross sectional views) showing the basic methoding of the invention.
Claims
1. A method of forming a relief image on a substrate comprising:
applying over a substrate a layer of an antireflective coating; andvacuum processing the antireflective coating prior to curing.
2. The method according to claim 1, further comprising applying a photoresist layer over the antireflective coating layer; and exposing and developing the photoresist layer.
3. The method according to claim 1, further comprising adding a thermal acid generator selected from the group consisting of a sulfonate having an optionally substituted phenyl substituent, an optionally substituted benzenesulfonate salt, a para-alkylbenzenesulfonate salt, a toluenesulfonate acid amine salt, a sulfonate having an optionally substituted anthracene substituent, and a nitrogen-containing cation component.
4. The method according to claim 1 further comprising adding a material capable of undergoing a thermally induced crosslinking reaction to said antireflective coating.
5. The method according to claim 4, wherein the antireflective coating is crosslinked prior to application of the photoresist layer.
6. The method according to claim 4, wherein the material capable of undergoing a thermally induced crosslinking reaction is an amine based crosslinker.
7. The method according to claim 1, wherein the antireflective coating comprises a resin selected from the group consisting of chromophore units, quinolinyl groups, a phenol based polymer, and an anthracene based polymer.
8. The method according to claim 1, wherein the substrate is selected from the group consisting of silicon, silicon dioxide, aluminum-aluminum oxide microelectronic wafers, gallium arsenide, silicon carbide, ceramic, quartz and copper substrates.
9. The method according to claim 1, wherein the vacuum processing is performed at or near ambient temperature.
10. The method according to claim 9, wherein said ambient temperature is from about 20° C. to about 50° C.
11. The method according to claim 10, wherein said ambient temperature is from about 22° C. to about 30° C.
12. The method according to claim 10, wherein said vacuum processing is performed at a pressure from about 10−5 to about 10−7 Torr.
13. An antireflective coating formed from the method according to claim 1.
Patent Application
20070178404
