This patent application claims the benefit of German Patent Application No. 10 2009 025 895.7, filed on Jun. 2, 2009 and is hereby incorporated by reference herein
The present invention relates to a metrology system. The metrology system exhibits at least one measurement objective for determining positions of structures on a substrate. Furthermore a measurement table, movable at least in X-coordinate direction and at least in Y-coordinate direction, for holding the substrate is provided. The measurement table exhibits a support, into which the substrate to be measured can be placed. The support essentially has the shape of the substrate, so that the structures to be measured on the surface of the substrate can be illuminated by an illumination system.
A person skilled in the art can design the support for the substrate in an arbitrary manner. The only requirement is that the substrate, like for example mask or wafer, fits into the support completely. The support and its design for the substrate essentially are determined by the metrological requirements of the measurement, like for example precision or repeatability.
The invention furthermore relates to a method for monitoring and/or correcting errors in a metrology system. The errors are errors of first order or errors of second order. The errors for example are errors in orthogonality, which arise, inter alia statistically, in a metrology system.
A metrology system is sufficiently known in the state of the art. For example, reference is made to the presentation manuscript “Pattern Placement Metrology for Mask making” by Dr. Carola Bläsing. The presentation was given at the conference Semicon, Education Program, on 31 Mar. 1998 in Geneva, wherein a metrology system was described in detail. The setup of a metrology system, as it is known for example from the state of the art, is explained more closely in the subsequent description of
The German patent DE 197 34 695 D1 discloses a method for the correction of a system. Therein the coordinates of structures on an uncalibrated reference object are measured in plural angular positions on the measurement table of the metrology system. The measured coordinates are automatically rotated back into the starting position by rotation functions. Therefrom a correction function is determined in such a way that the coordinates rotated back are in optimal agreement with the coordinates of the starting position. Therein each reference object is only rotated around one axis. The symmetric linear combinations of the fitting functions used in the approximation of the correction function are determined and are not considered in the approximation. The generated correction functions are systematically complete and do not contain over-determined or erroneous terms.
The German patent application DE 10 2007 030 390 A1 discloses a metrology system, to which there corresponds a device for automatically aligning a substrate. The metrology system there further comprises a control and computation unit, so that a self-calibration based on at least two different and automatically set alignments of the substrate is performable. This automatic correction can be performed automatically in certain periodic time intervals.
Normally the operator of a metrology system daily checks the state of the metrology system by measurements, setting one or plural angular positions of the substrate and measuring the positions of the structures on the substrate in each of the set angular positions. If the metrology system has drifted, it is corrected based on these measurements. This method, however, does not provide a possibility to monitor and correct errors which arise irregularly, for example during loading a metrology system.
It is an object of the present invention to provide a metrology system which is able to monitor and/or correct errors arising irregularly, which affect the precision and/or repeatability of measurements obtained with a metrology system.
The present invention provides a metrology system comprising at least one measurement objective for determining the position of structures on a substrate; a measurement table movable in at least one X-coordinate direction and in at least one Y-coordinate direction; a support for the substrate with the structures to be measured is provided on the measurement table, wherein the support has the shape of the substrate; at least two marks are provided on the support for the substrate in such a way that the marks are detectable with the measurement objective by moving the measurement table and that the substrate on the support does not screen the marks on the support.
It is a further object of the invention to provide a method by which monitoring and/or automatic self-correction of irregular errors with respect to the measurement precision and/or repeatability of the metrology system is performable.
The present invention also provides a method comprising the following steps:
providing at least two marks at a distance from each other in the region of the support in such a way that these marks are not screened by the substrate to be measured;
moving the measurement table with the substrate or without the substrate automatically and/or at regular time intervals and/or started by the operator, in such a way that a position of the marks with respect to the coordinate system of the metrology system is measured;
obtaining from the position of at least two marks information on the state of the system and wherein the information is adequately displayed and/or archived; and/or
obtaining a correction, wherein the obtained correction is applied to the measured values with respect to the positions of the structures on the substrate.
The state of the metrology system in general can change erratically at certain events, like for instance loading with a substrate (mask or wafer). At present such changes can neither be eliminated nor monitored by operators of the metrology system. These changes significantly deteriorate the long-term and/or precision performance and/or the repeatability. In order to be able to detect such errors and to take corresponding measures regarding their correction, it is necessary for the support for the mask in the metrology system to exhibit at least two marks. Therein the at least two marks are provided on the support for the substrate in such a way that the marks are capturable from the measurement objective of the metrology system by moving the measurement table. Furthermore the masks are arranged in such a way on the support that a substrate in the support does not screen the marks on the support.
It may be sufficient for the determination of selected errors (for example orthogonality errors) that two marks are provided at a distance from each other on the support. It is, however, self-evident that more than two marks may be provided for the determination of these errors. Based on these marks usually only selected error terms of the already available correction are corrected again. If polynomial correction functions are used, usually all or selected error terms of first and/or second order are corrected again. If a different function basis is used (for example trigonometric functions), analogously error terms, which are of low frequency, are corrected again.
The substrate can be a mask for semiconductor manufacturing or a wafer. If the substrate is a mask, the support preferentially is an opening, so that the mask can be illuminated with a top-light system and/or a transmitted-light system. The opening is the support for the mask. The support can be formed in the measurement table itself. The opening in the measurement table exhibits two opposite edges, on which, respectively, the mark is provided. The position of each mark with respect to the coordinate system of the metrology system is determinable. The opening preferentially exhibits three points of support, on which the mask rests in the metrology system.
Furthermore a mirror body can be provided on the measurement table of the metrology system. The marks to be measured here also are provided around an opening for the mask provided in the mirror body. The measurement table of the metrology system therein is movable by such a distance that the marks can be captured and measured with the measurement objective of the metrology system.
Furthermore the marks can also be provided on a mask frame, which is placeable into the mirror body together with the mask. Here, also, the marks are provided around the opening of the mask frame, into which the mask to be measured can be placed.
In the case that the substrate to be measured is a wafer the measurement table preferentially carries a wafer chuck for holding the wafer. On the edge of the wafer chuck at opposite positions, respectively, a mark is provided. The position of each mark with respect to the coordinate system of the metrology system is determinable.
The measurement table itself can be a mirror body. Alternatively, the measurement table can carry the mirror body, which in turn carries the wafer chuck. The marks can also be provided on the mirror body and/or the wafer chuck.
It is also possible to use a chuck for other substrates, for example for a mask.
To the metrology system there correspond a robot, a magazine for the substrates, and a device for aligning the substrates. The robot therein is designed in such a way that it passes the substrates to the device for aligning, and after aligning removes the substrates from the device for aligning. Also the robot is suitable for removing a substrate from the magazine and putting it on the support of the metrology system.
The method according to the invention for monitoring and correcting system generated errors is implemented with a metrology system. The metrology system exhibits at least one measurement objective for the determination of the position of structures on a substrate. Furthermore a measurement table movable in X-coordinate direction and in Y-coordinate direction is provided. The measurement table exhibits a support for the mask.
In the case that the substrate is a mask, the support can exhibit an opening in the shape of the mask, so that the mask can be illuminated both with a transmitted-light system and/or with a top-light system. For the determination of the errors (for example orthogonality errors) at least two marks are provided at a distance from each other in the region outside the opening, wherein these marks are not covered by the mask to be measured. After placing the mask in the measurement table and/or at regular time intervals the measurement table is moved in such a way that a position of the marks with respect to the coordinate system of the metrology system is measured and a correction is determined therefrom. Based on the measured position of the at least two marks the distance between these two marks can be determined. A correction value or a correction is derivable for example from the distance between the two measured marks. The correction obtained is applied to the measurements with respect to the positions of the structures on the mask.
The position of the marks in the region outside the opening can be measured at regular time intervals and/or automatically, like for example after each loading of the measurement table with a mask, and/or started manually. Through the correction for example first order error terms are corrected. The correction of high frequency error terms is unchanged, so that also the orthogonality errors can be both monitored as well as corrected.
The marks can be designed in such a way that particular errors manifest themselves there at a magnified or reduced extent, respectively, and therefore selected error terms and/or sources of errors can be specifically monitored.
The correction determined based on the position of at least two marks can be determined in the loaded and/or the unloaded state of the metrology system with a substrate.
As already mentioned, the substrate can also be a wafer. The support for the wafer is a wafer chuck and the marks are provided correspondingly on the edge of the wafer chuck. Here the same conditions for providing the marks apply as in the case of the substrate being a mask. It is always necessary to provide the marks in such a way that they are not screened by the wafer placed in the wafer chuck.
Furthermore the marks can be designed in such a way that in addition to the position of the masks in X-coordinate direction and in Y-coordinate direction also the position of the mark in Z-coordinate direction can be captured. For the subsequent correction with respect to the position of the marks either the X-coordinate direction, Y-coordinate direction, and Z-coordinate direction, or only a part of the measured positions in the coordinate directions can be used.
In what follows embodiments shall illustrate the invention and its advantages with reference to the accompanying figures.
The same reference numeral is used for like elements of the invention or for elements of like function. Though the subsequent description restricts itself to a mask, this is not to be taken as a limitation of the invention. It is obvious to a person skilled in the art that a wafer chuck is used for holding a wafer in the metrology system. The design of a wafer chuck is widely known and need not be described here again. Furthermore it is self-evident that the wafer is illuminated with a top-light system only in the metrology system. Though the metrology system subsequently described in
A metrology system of the kind shown in
The method for monitoring and/or correcting system generated errors is used with a metrology system, like for example described in
In the region of the support at least two marks 54 are provided at a distance from each other in such a way that these marks 54 are not covered by the substrate 2 to be measured.
With substrate 2 and/or without substrate 2 the measurement table 20 is, automatically, and/or at regular time intervals, and/or started by the operator, moved in such a way that a position of the marks 54 with respect to the coordinate system of the metrology system 1 can be measured. Based on the position of at least two marks 54 information on the status of the system is obtained and is adequately displayed and/or archived.
Also, a correction can be obtained therefrom, wherein the obtained correction is applied to the measured values with respect to the positions of the structures 3 on the substrate 2.
For the correction it is sufficient to measure a distance between at least two marks 54 automatically and/or at regular time intervals. The substrate 2 is a mask for semiconductor manufacturing or a wafer.
The marks 54 are of such design that in addition to the position of the marks in X-coordinate direction and in Y-coordinate direction also the position of the mark in Z-coordinate direction can be recorded, wherein for the correction either the position of the marks 54 in X-coordinate direction, Y-coordinate direction, and Z-coordinate direction or only a part of these measured positions in the coordinate directions is used.
The correction determined based on the position of at least two marks 54 can be determined in the loaded state and/or in the unloaded state of the metrology system 1 with a substrate 2.
The invention has been described with reference to specific embodiments. It is, however, conceivable that modifications and alterations can be made without leaving the scope of the subsequent claims.
Number | Date | Country | Kind |
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DE 102009025895.7 | Jun 2009 | DE | national |