Claims
- 1. A micro-structure, comprising: a first bendable elongated member having a first, fixed end and a second free end and, being spaced substantially parallel from one of a second bendable elongated member having a first, fixed end and a second, free end, and a rigid component,
- wherein the first member has a length L from the first end to the second end specified by one of the following equations:
- a) for the first member spaced from the rigid component
- L<(2Edt.sup.3 /3P).sup.1/4
- wherein E is a Young's modulus of a material of the first member,
- d is a distance of the space between the first member and the rigid component,
- t is a thickness of the first member, and
- P is an external pressure applied to the first member; and
- b) for the first member spaced from the second member
- L<(Ed't.sup.3 /3P).sup.1/4
- wherein E, t and P are as defined above, and d' is a distance of the space between the first and second members.
- 2. The micro-structure as recited in claim 1, wherein the first member is a fin of a capacitor.
- 3. The micro-structure as recited in claim 1, wherein the second member is a fin of a capacitor.
- 4. The micro-structure as recited in claim 1, wherein the rigid member is a substrate.
- 5. The micro-structure as recited in claim 1, wherein the first and second members are made of polysilicon.
- 6. The micro-structure as recited in claim 1, wherein t is about 500 angstroms.
- 7. The micro-structure as recited in claim 1, wherein 0.7 micrometers .ltoreq.L .ltoreq.1.2 micrometers.
- 8. The micro-structure as recited in claim 1, wherein the micro-structure is a fin-type stack capacitor in a DRAM cell.
- 9. A semiconductor micro-structure, comprising: a first bendable elongated member having a first, fixed end and a second, free end, and being spaced substantially parallel to a second bendable elongated member having a first, fixed end and a second, free end,
- wherein the first member has a length L from the first end to the second end specified by the following equation
- L<(Ed't.sup.3 /3P).sup.1/4
- wherein E is a Young's modulus of a material of the first member,
- t is a thickness of the first member,
- P is an external pressure applied to the first member, and
- d' is a distance of the space between the first and second members.
- 10. The micro-structure as recited in claim 9, wherein the first member is a fin of a capacitor.
- 11. The micro-structure as recited in claim 9, wherein the second member is a fin of a capacitor.
- 12. The micro-structure as recited in claim 9, wherein the first and second members are made of polysilicon.
- 13. A The micro-structure as recited in claim 9, wherein t is about 500 angstroms.
- 14. The micro-structure as recited in claim 9, wherein 0.7 micrometers .ltoreq.L.ltoreq.1.2 micrometers.
- 15. The micro-structure as recited in claim 9, wherein the micro-structure is a fin-type stack capacitor in a DRAM cell.
- 16. A semiconductor micro-structure, comprising: a first, bendable elongated member having a first, fixed end and a second free end, and being spaced substantially parallel to a relatively more rigid component,
- wherein the first member has a length L from the first end to the second end specified by the following equation
- L<(2Edt.sup.3 /3P).sup.1/4
- wherein E is a Young's modulus of a material of the first member,
- d is a distance of the space between the first member and the rigid component,
- t is a thickness of the first member, and
- P is an external pressure applied to the first member.
- 17. The micro-structure as recite din claim 16, wherein the first member is a fin of a capacitor.
- 18. The micro-structure as recited in claim 16, wherein the relatively more rigid component is a substrate.
- 19. The micro-structure as recited in claim 16, wherein t is about 500 angstroms.
- 20. The micro-structure as recited in claim 16, wherein 0.7 micrometers .ltoreq.L.ltoreq.1.2 micrometers.
- 21. The micro-structure as recited in claim 16, wherein the micro-structure is a fin-type stack capacitor in a DRAM cell.
Priority Claims (2)
Number |
Date |
Country |
Kind |
4-173053 |
Jun 1992 |
JPX |
|
4-232443 |
Aug 1992 |
JPX |
|
Parent Case Info
This application is a continuation division of application Ser. No. 08/083,371, filed Jun. 29, 1993, issued Jul. 29, 1997 as U.S. Pat. No. 652,167.
US Referenced Citations (4)
Non-Patent Literature Citations (2)
Entry |
Stemme, Goran, "Resonant Silicon Sensors", J. Micromech. Microeng, vol. 1 (1991), pp. 113-125. |
S. Wolf, "Silicon Processing for the VLSI Era", Lattice Press, vol. 2, (1991), pp. 214-215. |
Divisions (1)
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Number |
Date |
Country |
Parent |
83371 |
Jun 1993 |
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