Microelectronic assembly with multi-layer support structure

Information

  • Patent Grant
  • 8604605
  • Patent Number
    8,604,605
  • Date Filed
    Friday, January 5, 2007
    17 years ago
  • Date Issued
    Tuesday, December 10, 2013
    10 years ago
Abstract
A method of forming a microelectronic assembly includes positioning a support structure adjacent to an active region of a device but not extending onto the active region. The support structure has planar sections. Each planar section has a substantially uniform composition. The composition of at least one of the planar sections differs from the composition of at least one of the other planar sections. A lid is positioned in contact with the support structure and extends over the active region. The support structure is bonded to the device and to the lid.
Description
FIELD OF THE INVENTION

This application relates to a microelectronic assembly and, more particularly, to a microelectronic assembly with a multi-layer support structure and a method of forming said microelectronic assembly.


BACKGROUND OF THE INVENTION

Microelectronic assemblies typically include a device with an active region thereupon. The active region typically is surrounded by a support structure. A lid is supported by the support structure and extends over the active region of the device.


The continual miniaturization of electronic assemblies in general has created continued demand to reduce the size of such microelectronic assemblies and to improve the methods of manufacturing such microelectronic devices.


SUMMARY OF THE INVENTION

In one aspect, a method of forming a microelectronic assembly is disclosed. The method includes positioning a support structure adjacent to an active region of a device but not extending onto the active region. The support structure has planar sections, with each planar section having a substantially uniform composition. The composition of at least one of the planar sections differs from the composition of at least one of the other planar sections. A lid is positioned in contact with the support structure and extending over the active region. The support structure is bonded to the device and to the lid.


In some implementations, the planar sections include first and second adhesive layers coupled to the device and to the lid, respectively. A structural layer is between the first and second adhesive layers. The structural layer is adapted to resist deformation under environmental conditions associated with bonding the first adhesive layer to the device and the second adhesive layer to the lid. In those implementations, the method also includes exposing the first and second adhesive layers to environmental conditions to cause the first and second adhesive layers to bond to the device and lid, respectively. In some instances, exposing the first and second adhesive layers to the environmental conditions includes exposing the first and second adhesive layers to a temperature and a pressure to cause the bonding. Typically, a vertically disposed edge of the structural layer borders the active region of the device. While the first and second adhesive layers are exposed to the bonding environmental conditions, the structural layer resists deformation over or into the active region. The structural layer's position between the two adhesive layers also restrains deformation of the adhesive layers.


In certain implementations, the support structure is formed by forming a multi-layered sheet of support structure material and punching the sheet to define one or more apertures having side walls that can border corresponding active regions.


In some instances, forming the multi-layered sheet of support structure material includes providing a structural layer having a first side and a second side opposite the first side, adhering a first adhesive layer to the first side of the structural layer and adhering a second adhesive layer to the second side of the structural layer.


In some instances, forming the multi-layered sheet of support structure material includes providing a sheet of material adapted to resist deformation under environmental conditions associated with bonding an adhesive material, forming a plurality of pores in opposite surfaces of the support structure and coating the porous surfaces with an adhesive material that seeps at least partially into the pores.


In some instances, forming the multi-layered sheet of support structure material includes providing an adhesive material and partially curing the adhesive material to define a section of the support structure adapted to resist deformation under environmental conditions associated with fully curing the adhesive material. According to some embodiments, the section of the support structure adapted to resist deformation is approximately midway between an upper surface and a lower surface of the support structure.


In certain embodiments, positioning the support structure includes aligning the aperture in the support structure so that the one or more side walls border the active region.


According to some implementations, the change in composition between the at least one planar section that differs from the composition of the at least one other planar section is gradual.


In some implementations, the disclosed method includes formulating the first adhesive layer with a first chemical makeup to facilitate bonding to the device; and formulating the second adhesive layer with a second chemical makeup that is different than the first chemical makeup to facilitate bonding to the lid.


In certain embodiments, the planar sections include first and second structural layers coupled to the device and the lid, respectively and an adhesive layer between the first and second structural layers. The first and second structural layers are adapted to resist deformation under environmental conditions suitable for bonding the first adhesive layer to the first and second structural layers. In those embodiments, the method further includes exposing the adhesive layer to the environmental conditions suitable for bonding the adhesive layer.


The active region typically is populated with one or more microelectronic devices, such as optical devices. When optical devices are used, the lid is typically substantially transparent to electromagnetic radiation at wavelengths that are relevant to the optical devices. The planar sections typically include at least one layer that is substantially opaque to radiation at a wavelength relevant to the one or more optical devices. In some embodiments, at least one substantially opaque layer is substantially non-reflective to the relevant wavelengths. In some implementations, the lid is glass.


In another aspect, a microelectronic assembly is disclosed that includes a device having an active region. A support structure with planar sections having substantially uniform compositions is adjacent to the active region but does not extend onto the active region. A lid is in contact with the support structure and extends over the active region. The support structure has planar sections with each planar section having a substantially uniform composition. The composition of at least one of the planar sections differs from the composition of at least one other of the planar sections.


In some instances, the planar sections include first and second adhesive layers coupled to the device and to the lid, respectively and a structural layer between the first and second adhesive layers. The structural layer is adapted to resist deformation under environmental conditions that are suitable to bond the first adhesive layer to the device and the second adhesive layer to the lid. The bonding environmental conditions typically include a pressure and a temperature suitable to bond the first adhesive layer to the device and the second adhesive layer to the lid.


According to some implementations, the first and second adhesive layers are specifically formulated to facilitate bonding to the device and to the lid, respectively. In certain embodiments, the structural layer is substantially opaque.


In some embodiments, the planar sections include first and second structural layers respectively coupled to the device and to the lid and an adhesive layer positioned between the first and second structural layers. The first and second structural layers are adapted to resist deformation under environmental conditions that are suitable for bonding the adhesive layer to the first and second structural layers.


Certain implementations of the assembly include an active region that is populated with one or more microelectronic devices. The one or more microelectronic devices can be one or more optical devices. In those instances, the lid typically is substantially transparent to electromagnetic radiation at a wavelength that is relevant to the one or more optical devices. For example, the lid can be glass. Typically, at least one of the planar sections is substantially opaque to radiation having wavelengths that are relevant to the one or more optical devices.


In some implementations, one or more of the following advantages are present.


The amount of deformation of a support structure during bonding can be reduced. Accordingly, the possibility that harm might occur from the support structure deforming into or over the active region of a microelectronic device is reduced. Additionally, since the possibility of harmful deformation is reduced, the support structure can be formed closer to the active region. As a result, microelectronic assemblies can be made smaller. Higher support structures can be formed without increasing the likelihood of damage from excessive deformation during bonding.





BRIEF DESCRIPTION OF THE DRAWINGS


FIGS. 1A-1E are partial cross-sectional elevational views showing a method of forming a microelectronic assembly according to one embodiment of the invention.



FIG. 2 is a partial cross-sectional elevational view of a microelectronic assembly 244 in accordance with another embodiment of the invention.



FIGS. 3A-3D are partial cross-sectional elevational views that illustrate an exemplary method of forming the support structure shown in FIG. 2.



FIG. 4 is a partial cross-sectional elevational view of a microelectronic assembly according to another embodiment of the invention.



FIG. 5 is a partial cross-sectional elevational view of a microelectronic assembly according to yet another embodiment of the invention.



FIG. 6 is a partial cross-sectional elevational view of a microelectronic assembly being assembled according to yet another embodiment of the invention.





Like reference numerals indicate like elements.


DETAILED DESCRIPTION


FIGS. 1A-1E are partial cross-sectional elevational views showing a method of forming a microelectronic assembly according to one embodiment of the invention. The illustrated method is adapted to be implemented as a wafer-level process. However, for simplicity sake, the figures show only a fragmentary view of the components undergoing that process.


Referring to FIG. 1A, the illustrated method includes forming a multi-layered sheet 102 of support structure material. The multi-layered sheet 102 is formed by providing a structural layer 104 having a first side 106 and a second side 108. The second side 108 is opposite the first side 106. A first adhesive layer 110 is adhered to the second side 108 of the structural layer 104. A second adhesive layer 112 is adhered to the first side 106 of the structural layer 104. The structural layer 104 includes a material that is adapted to resist deformation under environmental conditions (e.g., pressures and/or temperatures) that are suitable for bonding the first and second adhesive layers 110, 112. A variety of environmental conditions (e.g., ultraviolet radiation, etc.) may be suitable to facilitate bonding of the adhesive layers 106, 108 to external elements.


Certain dimensions of the elements shown in the figures are exaggerated for clarity sake. In a preferred embodiment, the vertical dimensions of the adhesive layers 110, 112 would be as small as practicable and the vertical dimension of the structural layer 104 would be significantly greater than the vertical dimensions of either adhesive layer 110, 112. Accordingly, in a typical implementation, the structural layer 104 would account for most of the height of the multi-layered sheet 102. Indeed, in most instances, each adhesive layer 110, 112 is only thick enough to provide a substantially continuous coating over the corresponding surface of the structural layer 104, taking into account surface irregularities. The ratio of thicknesses between layers in the multi-layered sheet typically is between about 1:2:1 and 1:500:1. More preferably, however, that ratio is approximately 1:40:1.


A pair of dicing lines 105 is shown in the figures. The dicing lines 105 identify where cuts will eventually be made to separate the wafer into individual microelectronic devices.


In FIG. 1B, the multi-layered sheet 102 is punched to form an aperture 114 that extends entirely through the structural layer 104, the first adhesive layer 110 and the second adhesive layer 112. The aperture 114 has side walls 116 that include exposed inner edges 118, 120, 122 of the structural layer 104 the first adhesive layer 110 and the second adhesive layer 112, respectively.


After the aperture 114 is formed, in FIG. 1C, the method includes positioning the punched multi-layered sheet 102 between a device wafer 124 and a lid wafer 126. The multi-layered sheet 102 acts as a support structure 128 for the lid wafer 126. In the illustrated embodiment, the device wafer 124 has an upper surface 130 with an active region 132 thereon. Microelectronic devices (e.g., optical devices) are exposed at the upper surface 130 in the active region 132. The punched, multi-layered sheet 102 is positioned so that the aperture 114 aligns with the active region 132. In that way, the support structure 128 borders the active region 132 but does not extend onto the active region 132.


The lid wafer 126 is in contact with the support structure 128 and extends over the active region 132. In optical microelectronic assemblies, the lid wafer 126 typically includes a material (e.g., glass, plastic, etc.) that is substantially transparent to radiation having a wavelength that is relevant to the optical devices exposed at the active region 132.


The device wafer 124, the support structure 128 and the lid wafer 126 together define a substantially empty cavity 142 around the active region 132. The term “substantially empty” should be construed to include cavities that are filled with air, gas or that are under vacuum. The cavity 142 is bordered on all sides by the support structure 128. The upper surface 130 of the device wafer 124 defines the bottom of each cavity 142. The lid wafer 126 extends over the area that is bordered by the support structure 128 and defines a top of each cavity 142. In a typical embodiment, the substantially empty cavity 142 is filled with a gas, such as air. However, in other embodiments, the substantially empty cavities could be under vacuum.


In the illustrated implementation, the first and second adhesive layers 110, 112 have different chemical formulations. More particularly, the first adhesive layer 110 is specifically formulated to facilitate bonding to the device wafer 124. Similarly, the second adhesive layer 112 is specifically formulated to facilitate bonding to the lid wafer 126. Generally, most adhesives are compatible with most materials. However, there are some exceptions. For example, epoxies generally bond poorly to chrome or plastics. Additionally, thermoplastics bond poorly to precious metals. Acrylics tend not to bond to rubber or polyethylene. Cyanoacrylates adhere poorly to many common materials. Accordingly, it is desirable to avoid using certain adhesive/material combinations. Providing separate adhesive layers 110, 112 facilitates customizing each adhesive layer for its intended application.



FIG. 1D shows the support structure 128 being bonded to the device wafer 124 and to the lid wafer 126. The illustrated bonding process includes exposing the first and second adhesive layers 110, 112 to appropriate environmental conditions (e.g., pressures and temperatures) so as to cause the first adhesive layer 110 to bond to the device wafer 124 and to cause the second adhesive layer 112 to bond to the lid wafer 126. In the illustrated embodiment, the entire assembly 138 (including the device wafer 124, the support structure 128 and the lid wafer 126) is positioned between a pair of pressure plates 134, 136 that are applying a compressive force to the assembly 138.


A heat source 140 is applying a suitable amount of heat to the assembly to increase the temperature of the adhesive layers 110, 112 to facilitate their bonding. The heat source 140 is shown as an external element. However, the heat source can be implemented in a number of ways. For example, the heat source could be integrated into one or both of the pressure plates.


During the bonding process, the applied pressure and temperature causes the first and second adhesive layers 110, 112 to deform. Accordingly, the inner edges 120, 122 of the first and second adhesive layers 110, 112 bulge into the cavity 142. Since the structural layer 104 is adapted to resist deformation under pressure and temperature conditions associated with the bonding process, the structural layer 104 substantially retains its shape during the bonding process. Accordingly, the inner edge 118 of the structural layer 104 does not substantially bulge or extend into the cavity 142 during bonding. Additionally, the presence of the structural layer 104 between the two adhesive layers 110, 112 tends to restrain the amount of bulging that each adhesive layer 110, 112 experiences. Accordingly, the support structure 128 can support the lid wafer 126 at a relatively large height above the device wafer 124 with relatively little bulging effect from the side walls 116 of the aperture 114.


In the illustrated implementation, the amount of bulging from the side walls 116 of the aperture 114 into the cavity 114 above the active region 132 is minimized. Accordingly, the aperture 114 can be formed so that its side walls 116 are closer to the active region 132 than might otherwise be feasible. Since the structural layer 104 substantially retains its shape during the bonding process and since adhesive layers 110, 112 are separated from each other by the structural layer 104, the possibility of the side walls 116 bulging onto or over the active region 132 in a harmful way is reduced.



FIG. 1E shows a resulting microelectronic assembly 144. The illustrated microelectronic assembly 144 includes a device wafer 124 with active region 132. The device wafer 124 typically is a silicon integrated circuit. A support structure 128 is in contact with and bonded to the upper surface of the device wafer 124 and is disposed adjacent to the active region 132. The support structure 128 does not extend onto or over the active region 132, but is located very close to the active region 132. A lid wafer 126 is in contact with and bonded to the support structure 128 and extends over the active region 132.


In the illustrated embodiment, the support structure has essentially three planar sections—a first adhesive layer 110, a structural layer 104 and a second adhesive layer 112. Each planar section has a substantially uniform composition in a horizontal direction. However, the compositions of the structural layer 104, the first adhesive layer 110 and the second adhesive layer 112 differ from each other. The first adhesive layer 110 is a material that is formulated to facilitate bonding to the device wafer 124. The second adhesive layer 112 is a material that is formulated to facilitate bonding to the lid wafer 126. The structural layer 104 is adapted to resist deformation under temperature and pressure conditions that are suitable to bond the first adhesive layer 110 to the device wafer 124 and the second adhesive layer 112 to the lid wafer 126. In some instances, the first and second adhesive layers 110, 112 are substantially identical in composition.


The term “composition” as used herein should be construed broadly to include any structural or functional characteristic of a material. Such characteristics can include, for example, rigidity, chemical makeup, distribution of materials, density, viscosity, adhesiveness, etc. Furthermore, a substantially uniform composition does not require the complete absence of localized variations in a composition. Instead, a composition can be said to be substantially uniform even if it includes minor localized variations in a composition distributed throughout. For example, a composition that includes a porous first material, with a second material filling the pores can be considered substantially uniform if, for example, the filled pores are distributed throughout most of the composition. Additionally, the substantial uniformity of a planar section of material is not affected by the formation of an aperture through a section of the material.


The first and second adhesive layers 110, 112 are bonded to the device wafer 124 and to the lid wafer 126, respectively. The structural layer 104 is between the first and second adhesive layers 110, 112. The inner edges 120, 122 of the first and second adhesive layers 110, 112 are bulged slightly into the cavity 142 formed by the device wafer 124, the support structure 128 and the lid wafer 126. The inner edge 118 of the structural layer 104 is substantially straight (i.e., not bulged).


In certain implementations, the active region 132 is populated with one or more optical microelectronic devices. In those implementations, the lid wafer 126 is typically a material (e.g., glass) that is substantially transparent to electromagnetic radiation at a wavelength that is relevant to the one or more optical devices. In some embodiments, the lid wafer 126 includes one or more materials selected from glass, silicon, quartz and/or polymers, among others. The material composition of the lid wafer 126 can be adapted to filter particular spectral ranges (e.g., ultraviolet and/or infrared wavelengths). Certain embodiments include an anti-reflective coating on a surface of the lid wafer 126.


In some implementations, the structural layer 104 is substantially opaque to electromagnetic radiation at wavelengths that are relevant to optical devices in the active region 132. The substantially opaqueness can be provided by using an aluminum foil or other metal in the structural layer 104. Alternatively, the structural layer 104 could be infused with carbon black, a black pigment to provide an appropriate level of opaqueness.



FIG. 2 is a partial cross-sectional elevational view of a microelectronic assembly 244 in accordance with another embodiment of the invention.


The illustrated microelectronic assembly 244 is similar to the microelectronic assembly 144 shown in FIG. 1E except that the microelectronic assembly 244 of FIG. 2 has a support structure 228 with a composition that varies gradually in a vertical direction from the device wafer 124 to the lid wafer 126. The gradual variance in composition defines a first adhesive layer 210 that is in contact with the device wafer 124, a second adhesive layer 212 that is in contact with the lid wafer 126 and a structural layer 204 that is disposed between the first and second adhesive layers 210, 212. The structural layer 204 is adapted to resist deformation under temperature and pressure conditions associated with bonding the first and second adhesive layers 210, 212 to the device wafer 124 and to the lid wafer 126, respectively.


There are a number of ways that the illustrated support structure 228 can be formed. FIGS. 3A-3D are partial cross-sectional elevational views that illustrate an exemplary method of forming the support structure 228 shown in FIG. 2.


According to FIG. 3A, a substantially planar sheet 302 of structurally rigid material is provided. Essentially, the structurally rigid material is adapted to resist deformation under environmental conditions associated with bonding certain adhesive materials. An example of the structurally rigid material is an extruded silica filler material in a polyamide matrix. The substantially planar sheet 302 has an upper surface 304 and a lower surface 306.


In FIG. 3B, the upper surface 304 and the lower surface 306 of the substantially planar sheet 302 are etched to form pores 308 in the upper and lower surfaces 304, 306. Typically, the pores are formed in a manner that ensures an approximately uniform porosity across each surface 304, 306. The pores typically extend into each surface 304, 306 a distance that is less than half the total height of the substantially planar sheet 302. The pores can be substantially cylindrical, tapered or can have a variety of other shapes. A number of techniques are suitable to form the pores 308.


Subsequently, in FIG. 3C, an adhesive material 310 is applied to the upper and lower surfaces 304, 306 in a manner that enables the adhesive material 310 to seep at least partially into the pores 308 in the upper and lower surfaces 304, 306. In that way, a relatively large concentration of adhesive material 310 can be provided at the upper and lower surfaces 304, 306 of the substantially planar sheet 302 with a gradually lessening concentration of adhesive material 310 toward the center of the substantially planar sheet 302. Certain embodiments include virtually no adhesive material 310 at the center of the substantially planar sheet 302.


In FIG. 3D, an aperture 314 is formed in the support structure 328. In some implementations, the aperture 314 is formed by punching or otherwise cutting through the support structure material. The aperture 314 is formed with substantially flat side walls 316. The aperture 314 is sized so that when the support structure 328 is coupled to a device wafer 124, the side walls 316 border an active region 132 on the device wafer 124 very closely.


An alternative method of forming the support structure 228 of FIG. 2 is to provide an adhesive sheet with a center layer (i.e., the structural layer 204) that is more fully cured than the outer layers (i.e., adhesive layers 210, 212). Exposure to oxygen retards the ability of certain adhesive materials to cure. For example, the rate at which certain UV-curable (ultraviolet curable) adhesives can be set is sensitive to oxygen retardation. Therefore, exposure to oxygen can result in the edges of joints remaining wet well after the bulk of the adhesive has fully cured. As another example, anaerobic adhesives cure in the presence of metal ions and the absence of oxygen so, again, the presence of oxygen delays cure. Accordingly, if a sheet of such material is exposed to curing conditions in an oxygen atmosphere, then the center of the adhesive sheet would cure faster than the outer layers, because the outer layers would be exposed to oxygen.



FIG. 4 is a partial cross-sectional elevational view of a microelectronic assembly 444 according to another embodiment of the invention.


The illustrated microelectronic assembly 444 is similar to the microelectronic assembly 144 shown in FIG. 1E except that the microelectronic assembly 444 of FIG. 4 includes a support structure 428 with a first structural layer 404a in direct contact with the device wafer 424, a second structural layer 404b in direct contact with the lid wafer 426 and an adhesive layer 410 between confronting faces of the first and second structural layers 404a, 404b. The first and second structural layers 404a, 404b are adapted to resist deformation under conditions associated with causing the adhesive layer 410 to bond.


The illustrated first and second structural layers 404a, 404b can be formed in a number of ways. For example, in one implementation, the first and second structural layers 404a, 404b are formed by depositing and curing a flowable organic material (e.g., a curable polymer) in an appropriately shaped and dimensioned mold element. In some instances, the flowable organic material is molded to form sheets of structural layer material. An adhesive coating is applied to at least one surface of each sheet. The adhesive coating can be used to adhere one of the sheets to the device wafer 424 and the other of the sheets to the lid wafer 426. The adhesive coating can be applied with a roller to the surfaces of the sheets. In some implementations, the flowable organic material includes a polymer such as a photosensitive polymer which is curable by ultraviolet light (“UV settable polymer”). Alternatively, a photoresist or other selectively activatable polymer can be deposited onto the lid wafer and patterned to form the structural supports 428.


Various other materials such as other polymers, glasses, especially low melting point glasses and frit glass, and fusible metallic materials such as solders, tin, and eutectic compositions and solder pastes can be used to form first and second structural supports 428. Alternatively, the first and second structural supports 428 can be manufactured by molding, etching, machining, pressing, etc., and then mounted between the lid wafer 426 and device wafer 424 with an adhesive. Other materials are suitable as well, including silicon or other semiconductors, metals, sol gels, glasses and ceramics.


An advantage of the structure illustrated in FIG. 4 is that the possibility of adhesive material expanding into or over the active region during bonding is reduced.



FIG. 5 is a partial cross-sectional elevational view of a microelectronic assembly 500 according to yet another embodiment of the invention.


The illustrated microelectronic assembly 500 is similar to the microelectronic assembly shown, for example, in FIG. 1E except the microelectronic assembly 500 includes a multi-layer support structure 528 with five distinct layers. Those layers include a first adhesive layer 510 in contact with the device wafer 124, a second adhesive layer 512 in contact with the lid wafer 126, a first structural layer 504a in contact with the first adhesive layer 510, a second structural layer 504b in contact with the second adhesive layer 512 and a middle adhesive layer 511 disposed between the first and second structural layers 504a, 504b.


An aperture 514 is formed through the multi-layer support structure 528. The aperture 514 has a side surface 516 that borders an active region 132 of the device wafer 124.


Although the illustrated implementation shows five distinct alternating adhesive and structural layers, it should be understood that any number of alternating adhesive and structural layers could be implemented. By increasing the number of layers, the height of the lid wafer 126 above the device wafer 124 can be increased without substantially increasing the possibility that harmful bulging from the side walls 516 of the aperture 514 into or above the active region 132 will occur.



FIG. 6 is a partial cross-sectional elevational view of a microelectronic assembly being assembled according to yet another embodiment of the invention.


In the illustrated embodiment, the support structure 628 includes a structural portion 604 with protrusions 650 that extend from an upper surface 652 thereof and from a lower surface 654 thereof. The protrusions 650 can vary in shape, size and number. For example, in various implementations the protrusions can be pins, walls, curved surfaces, etc. The protrusions 650 can protrude a great or small distance. However, typically all of the protrusions 650 have approximately the same vertical dimension. There can be as few as three protrusions 650 or significantly more protrusions 650. The illustrated protrusions 650 have substantially flat, substantially coplanar distal ends 656. The structural portion 604 is adapted to resist deformation under environmental conditions associated with bonding and/or curing the adhesive material.


The illustrated support structure 628 also includes first and second adhesive portions 610, 612. Each adhesive portion 610, 612 is formed from adhesive material deposited in the spaces between the protrusions 650. In the illustrated implementation, the second adhesive layer 612 is in contact with the lid wafer 126. The distal ends 656 of the upward-extending protrusions 650 and the upper surface of the second adhesive portion 612 are substantially coplanar. Since the coplanar distal ends 656 of the protrusions 650 are in contact with the lower surface of the lid wafer 126, the illustrated arrangement helps ensure parallelism between the upper surface 652 of the structural portion 604 and the lid wafer 126. Generally, parallelism between those elements desirably helps to ensure uniform bulging of adhesive material around a perimeter of a cavity.


As shown, the first adhesive portion 610 is not yet in contact with the device wafer 124. The adhesive material is shown deposited between the downward-extending protrusions 650. The lower surface 658 of each deposit has an approximately dome-shaped profile with the portions of each deposit that are closest to the protrusions 650 extending the smallest distance from the lower surface 654 of the structural portion 604. Generally, the center of each dome extends from the lower surface 654 of the structural portion 604 beyond the plane that is defined by the distal ends 656 of the protrusions 650.


When the lower surface 658 of the first adhesive portion 610 is brought into contact with the device wafer 124, the lower surface 658 substantially flattens and forms a surface that is substantially coplanar with the distal ends 656 of the protrusions 650. When such contact is made, the distal ends 656 of the downward-facing protrusions 650 typically contact the upper surface of the device wafer 124. Such contact helps to ensure parallelism between the lower surface of the structural portion and the device wafer 124. Provided that the area of the distal tips 656 is small relative to the total joint area, good joint strength between the support structure 628 and the device wafer 124 can be achieved.


Although the invention herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the present invention. It is therefore to be understood that numerous modifications may be made to the illustrative embodiments and that other arrangements may be devised without departing from the spirit and scope of the present invention as defined by the appended claims.


For example, the materials utilized to form the adhesive and structural layers can be varied considerably. Additionally, the materials of the device and the lid can be varied considerably. Additionally, the order of steps in the methods disclosed herein can be modified.


Some implementations include support structures having multiple alternating adhesive and structural layers. Such implementations might be desirable if, for example, the lid wafer 126 is to be positioned high above the upper surface of the device wafer 124.


A variety of techniques are possible for bonding the adhesive layers to the device and/or the lid. Such techniques can include, for example, exposing the adhesive layers to ultraviolet (UV) radiation for UV-curable adhesives and/or exposing the adhesive layers to other environmental conditions that cause water loss in the adhesive layers.


The techniques disclosed herein are typically implemented as a wafer-scale process. Accordingly, other steps, such as dicing, electrically coupling, etc. are usually implemented to prepare a complete microelectronic assembly. Also, the structural layers and corresponding adhesive layers are shaped to have substantially identical patterns.


Other implementations are within the scope of the following claims.

Claims
  • 1. A microelectronic assembly comprising: a device wafer portion having a surface that includes an active region;a support structure disposed on the surface of the device wafer portion and located adjacent to, but not extending onto, the active region; anda lid in contact with the support structure and extending over the active region,wherein the support structure is formed of a plurality of planar sheets, each planar sheet having a substantially uniform composition,the plurality of planar sheets comprises: first and second adhesive layers coupled to the device wafer portion and to the lid, respectively, andthe composition of the first adhesive layer differs from the composition of the second adhesive layer.
  • 2. The microelectronic assembly of claim 1, wherein the plurality of planar sheets comprises: a structural layer between the first and second adhesive layers, wherein the structural layer is resistive to deformation under environmental conditions that are suitable to bond the first adhesive layer to the device wafer portion and the second adhesive layer to the lid.
  • 3. The microelectronic assembly of claim 2, wherein the environmental conditions comprise a pressure and a temperature suitable to bond the first adhesive layer to the device wafer portion and the second adhesive layer to the lid.
  • 4. The microelectronic assembly of claim 2, wherein the first and second adhesive layers are specifically formulated to facilitate bonding to the device wafer portion and to the lid, respectively.
  • 5. The microelectronic assembly of claim 2 wherein the structural layer is substantially opaque.
  • 6. The microelectronic assembly of claim 1, wherein the plurality of planar sheets comprises: first and second structural layers respectively coupled to the device wafer portion and to the lid;an adhesive layer positioned between the first and second structural layers,wherein the first and second structural layers are adapted to resist deformation under environmental conditions that are suitable for bonding the adhesive layer to the first and second structural layers.
  • 7. The microelectronic assembly of claim 1 wherein the active region is populated with one or more microelectronic devices.
  • 8. The microelectronic assembly of claim 7 wherein the one or more microelectronic devices comprise one or more optical devices, and wherein the lid is substantially transparent to electromagnetic radiation at a wavelength that is relevant to the one or more optical devices.
  • 9. The microelectronic assembly of claim 8 wherein the lid is glass.
  • 10. The microelectronic assembly of claim 8 wherein at least one of the planar sections is substantially opaque at a wavelength that is relevant to the one or more optical devices.
  • 11. The microelectronic assembly of claim 1, wherein the active region of the device wafer portion, a portion of the lid extending over the active region, and a border of the support structure that adjoins the active region together define a substantially empty cavity.
  • 12. The microelectronic assembly of claim 1, wherein the support structure extends onto one or more dicing lanes of the device wafer portion.
  • 13. A microelectronic assembly, comprising: a device wafer having a surface that includes one or more active regions;a support structure disposed on the surface of the device wafer and located adjacent to each of the one or more active regions but not extending onto any of the active regions; anda lid wafer in contact with the support structure and extending over each of the one or more active regions,wherein the support structure is formed of a plurality of planar sheets, each planar sheet having a substantially uniform composition,the plurality of planar sheets comprises: first and second adhesive layers coupled to the device wafer and to the lid wafer, respectively, andthe composition of the first adhesive layer differs from the composition of the second adhesive layer.
  • 14. The microelectronic assembly of claim 13, wherein the plurality of planar sheets comprises: a structural layer between the first and second adhesive layers, wherein the structural layer is resistive to deformation under environmental conditions that are suitable to bond the first adhesive layer to the device wafer and the second adhesive layer to the lid wafer.
  • 15. The microelectronic assembly of claim 14, wherein the environmental conditions comprise a pressure and a temperature suitable to bond the first adhesive layer to the device wafer and the second adhesive layer to the lid.
  • 16. The microelectronic assembly of claim 14, wherein the first and second adhesive layers are specifically formulated to facilitate bonding to the device wafer and to the lid wafer, respectively.
  • 17. The microelectronic assembly of claim 14, wherein the structural layer is substantially opaque.
  • 18. The microelectronic assembly of claim 13, wherein each of the one or more active regions is populated with one or more associated microelectronic devices.
  • 19. The microelectronic assembly of claim 18, wherein the one or more microelectronic devices associated with each of the one or more active regions comprise one or more optical devices, and the lid wafer is substantially transparent to electromagnetic radiation at a wavelength that is relevant to the one or more optical devices.
  • 20. The microelectronic assembly of claim 19, wherein the lid wafer is glass.
  • 21. The microelectronic assembly of claim 19, wherein at least one of the plurality of planar sheets is substantially opaque at a wavelength that is relevant to the one or more optical devices.
  • 22. The microelectronic assembly of claim 13, wherein each of the one or more active regions of the device wafer, a portion of the lid extending over that active region, and a border of the support structure that adjoins that active region together define an associated substantially empty cavity.
  • 23. The microelectronic assembly of claim 13, wherein the support structure extends onto one or more dicing lanes of the device wafer.
  • 24. The microelectronic assembly of claim 2, wherein the first adhesive layer is of a material formulated to facilitate bonding to the device wafer portion.
  • 25. The microelectronic assembly of claim 2, wherein the second adhesive layer is of a material formulated to facilitate bonding to the lid.
  • 26. The microelectronic assembly of claim 13, wherein the first adhesive layer is of a material formulated to facilitate bonding to the device wafer.
  • 27. The microelectronic assembly of claim 13, wherein the second adhesive layer is of a material formulated to facilitate bonding to the lid wafer.
US Referenced Citations (380)
Number Name Date Kind
2507956 Bruno et al. May 1950 A
2796370 Ostrender et al. Jun 1957 A
2851385 Spruance et al. Sep 1958 A
3648131 Stuby et al. Mar 1972 A
3761782 Youmans Sep 1973 A
3981023 King et al. Sep 1976 A
4259679 Knibb et al. Mar 1981 A
4279690 Dierschke Jul 1981 A
4339689 Yamanaka et al. Jul 1982 A
4551629 Carson et al. Nov 1985 A
4558171 Gantley et al. Dec 1985 A
4764846 Go Aug 1988 A
4768077 Scherer Aug 1988 A
4774630 Reisman et al. Sep 1988 A
4794092 Solomon Dec 1988 A
4797179 Watson et al. Jan 1989 A
4806106 Mebane et al. Feb 1989 A
4812420 Matsuda et al. Mar 1989 A
4825284 Soga et al. Apr 1989 A
4827376 Voss May 1989 A
4862197 Stoffel Aug 1989 A
4862249 Carlson Aug 1989 A
4894707 Yamawaki et al. Jan 1990 A
4933601 Sagawa et al. Jun 1990 A
4984358 Nelson Jan 1991 A
5070297 Kwon et al. Dec 1991 A
5072520 Nelson Dec 1991 A
5104820 Go et al. Apr 1992 A
5118924 Mehra et al. Jun 1992 A
5124543 Kawashima Jun 1992 A
5126286 Chance Jun 1992 A
5139972 Neugebauer et al. Aug 1992 A
5148265 Khandros et al. Sep 1992 A
5148266 Khandros et al. Sep 1992 A
5177753 Tanaka Jan 1993 A
5187122 Bonis Feb 1993 A
5198963 Gupta et al. Mar 1993 A
5220838 Fung et al. Jun 1993 A
5250462 Sasaki et al. Oct 1993 A
5266501 Imai Nov 1993 A
5266833 Capps Nov 1993 A
5285352 Pastore et al. Feb 1994 A
5321303 Kawahara et al. Jun 1994 A
5335210 Bernstein Aug 1994 A
5347159 Khandros et al. Sep 1994 A
5382829 Inoue Jan 1995 A
5390844 Distefano et al. Feb 1995 A
5398863 Grube et al. Mar 1995 A
5438305 Hikita et al. Aug 1995 A
5448014 Kong et al. Sep 1995 A
5473190 Inoue et al. Dec 1995 A
5486720 Kierse Jan 1996 A
5491302 Distefano et al. Feb 1996 A
5500540 Jewell et al. Mar 1996 A
5504035 Rostoker et al. Apr 1996 A
5518964 Distefano et al. May 1996 A
5526449 Meade et al. Jun 1996 A
5530288 Stone Jun 1996 A
5536909 Distefano et al. Jul 1996 A
5546654 Wojnarowski et al. Aug 1996 A
5557501 Distefano et al. Sep 1996 A
5567657 Wojnarowski et al. Oct 1996 A
5576680 Ling Nov 1996 A
5578874 Kurogi et al. Nov 1996 A
5595930 Baek Jan 1997 A
5608262 Degani et al. Mar 1997 A
5610431 Martin Mar 1997 A
5612570 Eide et al. Mar 1997 A
5629239 Distefano et al. May 1997 A
5629241 Matloubian et al. May 1997 A
5633785 Parker et al. May 1997 A
5642261 Bond et al. Jun 1997 A
5657206 Pedersen et al. Aug 1997 A
5659952 Kovac et al. Aug 1997 A
5661087 Pedersen et al. Aug 1997 A
5668033 Ohara et al. Sep 1997 A
5672519 Song et al. Sep 1997 A
5675180 Pedersen et al. Oct 1997 A
5677200 Park et al. Oct 1997 A
5677569 Choi et al. Oct 1997 A
5679977 Khandros et al. Oct 1997 A
5688716 DiStefano et al. Nov 1997 A
5703400 Wojnarowski et al. Dec 1997 A
5705858 Tsukamoto Jan 1998 A
5706174 Distefano et al. Jan 1998 A
5717245 Pedder Feb 1998 A
5734196 Horton et al. Mar 1998 A
5744752 McHerron et al. Apr 1998 A
5747870 Pedder May 1998 A
5757074 Matloubian et al. May 1998 A
5766987 Mitchell et al. Jun 1998 A
5787581 Distefano et al. Aug 1998 A
5798286 Faraci et al. Aug 1998 A
5798557 Salatino et al. Aug 1998 A
5801474 Sakairi et al. Sep 1998 A
5814894 Igarashi et al. Sep 1998 A
5817541 Averkiou et al. Oct 1998 A
5821609 Distefano et al. Oct 1998 A
5830782 Smith et al. Nov 1998 A
5837562 Cho Nov 1998 A
5837566 Pedersen et al. Nov 1998 A
5849623 Wojnarowski et al. Dec 1998 A
5857858 Gorowitz et al. Jan 1999 A
5859475 Freyman et al. Jan 1999 A
5869353 Levy et al. Feb 1999 A
5869887 Urushima Feb 1999 A
5869894 Degani et al. Feb 1999 A
5872697 Christensen et al. Feb 1999 A
5886393 Merrill et al. Mar 1999 A
5888884 Wojnarowski Mar 1999 A
5891761 Vindasius et al. Apr 1999 A
5892417 Johnson et al. Apr 1999 A
5895233 Higashi et al. Apr 1999 A
5895972 Paniccia Apr 1999 A
5900674 Wojnarowski et al. May 1999 A
5905639 Warren May 1999 A
5909052 Ohta et al. Jun 1999 A
5910687 Chen et al. Jun 1999 A
5913109 DiStefano et al. Jun 1999 A
5915168 Salatino et al. Jun 1999 A
5915752 DiStefano et al. Jun 1999 A
5918112 Shah et al. Jun 1999 A
5920142 Onishi et al. Jul 1999 A
5926380 Kim Jul 1999 A
5929517 DiStefano et al. Jul 1999 A
5938452 Wojnarowski Aug 1999 A
5952712 Ikuina et al. Sep 1999 A
5965933 Young et al. Oct 1999 A
5973391 Bischoff et al. Oct 1999 A
5976913 DiStefano et al. Nov 1999 A
5985695 Freyman et al. Nov 1999 A
5986746 Metz et al. Nov 1999 A
5991989 Onishi et al. Nov 1999 A
5993981 Askinazi et al. Nov 1999 A
6002163 Wojnarowski Dec 1999 A
6005466 Pedder Dec 1999 A
6011330 Goodman et al. Jan 2000 A
6020217 Kuisl et al. Feb 2000 A
6037659 Weixel Mar 2000 A
6040235 Badehi Mar 2000 A
6046076 Mitchell et al. Apr 2000 A
6046410 Wojnarowski et al. Apr 2000 A
6049470 Weale Apr 2000 A
6049972 Link et al. Apr 2000 A
6054756 DiStefano et al. Apr 2000 A
6072236 Akram et al. Jun 2000 A
6075289 Distefano Jun 2000 A
6080596 Vindasius et al. Jun 2000 A
6081035 Warner et al. Jun 2000 A
6092280 Wojnarowski Jul 2000 A
6093888 Laureanti et al. Jul 2000 A
6094138 Eberhardt et al. Jul 2000 A
6098278 Vindasius et al. Aug 2000 A
6100594 Fukui et al. Aug 2000 A
6104272 Yamamoto et al. Aug 2000 A
6121676 Solberg Sep 2000 A
6122009 Ueda et al. Sep 2000 A
6124179 Adamic, Jr. Sep 2000 A
6124546 Hayward et al. Sep 2000 A
6124637 Freyman et al. Sep 2000 A
6133626 Hawke et al. Oct 2000 A
6134118 Pedersen et al. Oct 2000 A
6140144 Najafi et al. Oct 2000 A
6156652 Michalicek Dec 2000 A
6156980 Peugh et al. Dec 2000 A
6165814 Wark et al. Dec 2000 A
6169328 Mitchell et al. Jan 2001 B1
6181015 Gotoh et al. Jan 2001 B1
6194774 Cheon Feb 2001 B1
6214644 Glenn Apr 2001 B1
6218729 Zavrel, Jr. et al. Apr 2001 B1
6221751 Chen et al. Apr 2001 B1
6225688 Kim et al. May 2001 B1
6225694 Terui et al. May 2001 B1
6228686 Smith et al. May 2001 B1
6229200 McLellan et al. May 2001 B1
6229427 Kurtz et al. May 2001 B1
6235141 Feldman et al. May 2001 B1
6238949 Nguyen et al. May 2001 B1
6238950 Howser et al. May 2001 B1
6249039 Harvey et al. Jun 2001 B1
6252778 Tonegawa et al. Jun 2001 B1
6255714 Kossives et al. Jul 2001 B1
6261945 Nye, III et al. Jul 2001 B1
6265246 Ruby et al. Jul 2001 B1
6265763 Jao et al. Jul 2001 B1
6274937 Ahn et al. Aug 2001 B1
6279227 Khandros et al. Aug 2001 B1
6281570 Kameyama et al. Aug 2001 B1
6285064 Foster Sep 2001 B1
6292086 Chu Sep 2001 B1
6297551 Dudderar et al. Oct 2001 B1
6309910 Haba et al. Oct 2001 B1
6310386 Shenoy Oct 2001 B1
6316840 Otani et al. Nov 2001 B1
6321444 Yatsuda et al. Nov 2001 B1
6323735 Welland et al. Nov 2001 B1
6326689 Thomas Dec 2001 B1
6326696 Horton et al. Dec 2001 B1
6326697 Farnworth Dec 2001 B1
6329715 Hayashi Dec 2001 B1
6342406 Glenn et al. Jan 2002 B1
6344688 Wang Feb 2002 B1
6353263 Dotta et al. Mar 2002 B1
6362525 Rahim Mar 2002 B1
6366629 Chen et al. Apr 2002 B1
6368896 Farnworth et al. Apr 2002 B2
6373130 Salaville Apr 2002 B1
6376279 Kwon et al. Apr 2002 B1
6377464 Hashemi et al. Apr 2002 B1
6384397 Takiar et al. May 2002 B1
6387747 Cha et al. May 2002 B1
6387793 Yap et al. May 2002 B1
6396043 Glenn et al. May 2002 B1
6396116 Kelly et al. May 2002 B1
6396470 Zhang et al. May 2002 B1
6403400 Lin et al. Jun 2002 B2
6404131 Kawano et al. Jun 2002 B1
6420208 Pozder et al. Jul 2002 B1
6429036 Nixon et al. Aug 2002 B1
6429511 Ruby et al. Aug 2002 B2
6441481 Karpman Aug 2002 B1
6449828 Pahl et al. Sep 2002 B2
6452238 Orcutt et al. Sep 2002 B1
6459150 Wu et al. Oct 2002 B1
6472727 Miyazaki et al. Oct 2002 B2
6480389 Shie et al. Nov 2002 B1
6483179 Iizima et al. Nov 2002 B2
6492194 Bureau et al. Dec 2002 B1
6492201 Haba Dec 2002 B1
6493231 Nicholson et al. Dec 2002 B2
6493240 Broglia et al. Dec 2002 B2
6493861 Li et al. Dec 2002 B1
6498099 McLellan et al. Dec 2002 B1
6498381 Halahan et al. Dec 2002 B2
6521987 Glenn et al. Feb 2003 B1
6534340 Karpman et al. Mar 2003 B1
6548911 Yu et al. Apr 2003 B2
6550664 Bradley et al. Apr 2003 B2
6552475 Hori et al. Apr 2003 B2
6555901 Yoshihara et al. Apr 2003 B1
6562647 Zandman et al. May 2003 B2
6569710 Pierson May 2003 B1
6583444 Fjelstad Jun 2003 B2
6583513 Utagikar et al. Jun 2003 B1
6596634 Umetsu et al. Jul 2003 B2
6607941 Prabhu et al. Aug 2003 B2
6614660 Bai et al. Sep 2003 B1
6621163 Weekamp et al. Sep 2003 B2
6624505 Badehi Sep 2003 B2
6627864 Glenn et al. Sep 2003 B1
6627985 Huppenthal et al. Sep 2003 B2
6627998 Caletka et al. Sep 2003 B1
6646289 Badehi Nov 2003 B1
6656827 Tsao et al. Dec 2003 B1
6657296 Ho et al. Dec 2003 B2
6664624 Haematsu et al. Dec 2003 B2
6670206 Kim et al. Dec 2003 B2
6670215 Miyazaki et al. Dec 2003 B2
6674159 Peterson et al. Jan 2004 B1
6678167 Degani et al. Jan 2004 B1
6693361 Siniaguine et al. Feb 2004 B1
6699730 Kim et al. Mar 2004 B2
6710456 Jiang et al. Mar 2004 B1
6713856 Tsai et al. Mar 2004 B2
6717254 Siniaguine Apr 2004 B2
6734040 Yamaguchi et al. May 2004 B2
6744109 Barton et al. Jun 2004 B2
6753205 Halahan Jun 2004 B2
6764875 Shook Jul 2004 B2
6768190 Yang et al. Jul 2004 B2
6784020 Lee et al. Aug 2004 B2
6787916 Halahan Sep 2004 B2
6798070 Funaya et al. Sep 2004 B2
6809412 Tourino et al. Oct 2004 B1
6818545 Lee et al. Nov 2004 B2
6822324 Tao et al. Nov 2004 B2
6830877 Ma et al. Dec 2004 B2
6849916 Glenn et al. Feb 2005 B1
6870259 Silverbrook Mar 2005 B2
6903012 Geefay et al. Jun 2005 B2
6903883 Amanai et al. Jun 2005 B2
6933616 Fang Aug 2005 B2
6940158 Haba et al. Sep 2005 B2
6955943 Zakel et al. Oct 2005 B2
6972480 Zilber et al. Dec 2005 B2
6982475 MacIntyre Jan 2006 B1
6995462 Bolken et al. Feb 2006 B2
7033664 Zilber et al. Apr 2006 B2
7164199 Tarn Jan 2007 B2
7265440 Zilber et al. Sep 2007 B2
7276798 Higashi et al. Oct 2007 B2
7564496 Wolterink et al. Jul 2009 B2
7754537 Haba et al. Jul 2010 B2
7791184 Wood et al. Sep 2010 B2
20010005040 Hong Jun 2001 A1
20010009300 Sugimura Jul 2001 A1
20010033478 Ortiz et al. Oct 2001 A1
20010042902 Wakabayashi et al. Nov 2001 A1
20020000646 Gooch et al. Jan 2002 A1
20020016024 Thomas Feb 2002 A1
20020017699 Shenoy Feb 2002 A1
20020056900 Liu et al. May 2002 A1
20020074668 Hofstee et al. Jun 2002 A1
20020089835 Simmons Jul 2002 A1
20020090803 Salaville Jul 2002 A1
20020102004 Minervini Aug 2002 A1
20020159242 Nakatani et al. Oct 2002 A1
20020170175 Aigner et al. Nov 2002 A1
20020179696 Pattanaik et al. Dec 2002 A1
20020195700 Li Dec 2002 A1
20030001252 Ku et al. Jan 2003 A1
20030017687 Hembree Jan 2003 A1
20030025204 Sakai Feb 2003 A1
20030038327 Smith Feb 2003 A1
20030047797 Kuan et al. Mar 2003 A1
20030052404 Thomas Mar 2003 A1
20030067073 Akram et al. Apr 2003 A1
20030077878 Kumar et al. Apr 2003 A1
20030102540 Lee Jun 2003 A1
20030133588 Pedersen Jul 2003 A1
20030148578 Ku et al. Aug 2003 A1
20030151139 Kimura Aug 2003 A1
20030159276 Wakefield Aug 2003 A1
20030168725 Warner et al. Sep 2003 A1
20030211014 Jacquorie et al. Nov 2003 A1
20030218283 Yasumura et al. Nov 2003 A1
20040007774 Crane, Jr. et al. Jan 2004 A1
20040029356 Timme et al. Feb 2004 A1
20040041249 Tsai et al. Mar 2004 A1
20040069758 Azdasht et al. Apr 2004 A1
20040099917 Greathouse et al. May 2004 A1
20040099938 Kang et al. May 2004 A1
20040099958 Schildgen et al. May 2004 A1
20040104261 Sterrett et al. Jun 2004 A1
20040104470 Bang et al. Jun 2004 A1
20040106294 Lee et al. Jun 2004 A1
20040115866 Bang et al. Jun 2004 A1
20040145054 Bang et al. Jul 2004 A1
20040164981 Fujita et al. Aug 2004 A1
20040166662 Lei Aug 2004 A1
20040188124 Stark Sep 2004 A1
20040217455 Shiono et al. Nov 2004 A1
20040238934 Warner et al. Dec 2004 A1
20040259325 Gan Dec 2004 A1
20050017348 Haba et al. Jan 2005 A1
20050042805 Swenson et al. Feb 2005 A1
20050062135 Tase et al. Mar 2005 A1
20050067681 De Villeneuve et al. Mar 2005 A1
20050067688 Humpston Mar 2005 A1
20050082653 McWilliams et al. Apr 2005 A1
20050082654 Humpston et al. Apr 2005 A1
20050085016 McWilliams et al. Apr 2005 A1
20050087861 Burtzlaff et al. Apr 2005 A1
20050095835 Humpston et al. May 2005 A1
20050104179 Zilber et al. May 2005 A1
20050116344 Humpston Jun 2005 A1
20050126472 Popescu et al. Jun 2005 A1
20050139984 Tuckerman et al. Jun 2005 A1
20050142685 Ouellet et al. Jun 2005 A1
20050167773 Ozawa et al. Aug 2005 A1
20050170656 Nasiri et al. Aug 2005 A1
20050189622 Humpston et al. Sep 2005 A1
20050189635 Humpston et al. Sep 2005 A1
20050205977 Zilber et al. Sep 2005 A1
20050236684 Chen et al. Oct 2005 A1
20050248680 Humpston Nov 2005 A1
20050258518 Yang et al. Nov 2005 A1
20050279916 Kang et al. Dec 2005 A1
20060023108 Watanabe et al. Feb 2006 A1
20060044450 Wolterink et al. Mar 2006 A1
20060081983 Humpston et al. Apr 2006 A1
20060091488 Kang et al. May 2006 A1
20060110854 Horning et al. May 2006 A1
20060141665 Mohammed Jun 2006 A1
20060166480 Yun et al. Jul 2006 A1
20060220234 Honer et al. Oct 2006 A1
20060278997 Gibson et al. Dec 2006 A1
20070042527 Tuckerman et al. Feb 2007 A1
20070138644 McWilliams et al. Jun 2007 A1
Foreign Referenced Citations (28)
Number Date Country
0 506 491 Sep 1992 EP
0 585 186 Mar 1994 EP
0 828 346 Mar 1998 EP
1 071 126 Jan 2001 EP
1 357 741 Oct 2003 EP
2392555 Mar 2004 GB
5047620 Feb 1993 JP
07-202157 Aug 1995 JP
08-213874 Aug 1996 JP
11-026782 Jan 1999 JP
11-326366 Nov 1999 JP
2006-041277 Feb 2006 JP
8502283 May 1985 WO
WO-8502283 May 1985 WO
8904113 May 1989 WO
WO-8904113 May 1989 WO
9519645 Jul 1995 WO
WO-9519645 Jul 1995 WO
WO-9711588 Mar 1997 WO
WO-02058233 Jul 2002 WO
2004017399 Feb 2004 WO
WO-2004017399 Feb 2004 WO
2004023546 Mar 2004 WO
2004025699 Mar 2004 WO
WO-2004023546 Mar 2004 WO
WO-2004025699 Mar 2004 WO
2004027880 Apr 2004 WO
WO-2004027880 Apr 2004 WO
Non-Patent Literature Citations (7)
Entry
U.S. Appl. No. 09/119,079, Haba.
U.S. Appl. No. 10/786,825, Haba et al.
U.S. Appl. No. 11/125,624, Zilber et al.
U.S. Appl. No. 11/284,289, filed Nov. 21, 2005, assigned to Tessera, Inc.
U.S. Appl. No. 11/204,680, filed Aug. 16, 2005, assigned to Tessera, Inc.
U.S. Appl. No. 11/300,900, filed Dec. 15, 2005, assigned to Tessera, Inc.
U.S. Appl. No. 10/077,388, filed Feb. 15, 2002, assigned to Tessera, Inc.
Related Publications (1)
Number Date Country
20080165519 A1 Jul 2008 US