Claims
- 1. A microelectronic structure having a hydrogen-sensitive dielectric, (14) comprising a metal-oxide-containing layer, which is a ferroelectric or a paraelectsic which is covered by a hydrogen barrier layer, wherein (22, 26) characterized in that the hydrogen barrier layer (22, 26) consists of comprises an electrically insulating material, and at least one intermediate oxide (18), which is at least five times as thick as the hydrogen-sensitive dielectric (141), is arranged between the hydrogen-sensitive dielectric (14) and the hydrogen barrier layer (22, 26).
- 2. The microelectronic structure as claimed in claim 1, characterized in that further comprising contact holes (20) filled with conductive material (24) are arranged in the intermediate oxide (18).
- 3. Currently Amended) The microelectronic structure as claimed in claim 1, wherein or 2, characterized in that the intermediate oxide (18) is a spin-on glass or a TEOS layer.
- 4. The microelectronic structure as claimed in claim 1, wherein one of claims 1 to 3, characterized in that the hydrogen barrier layer (22, 26) consists of includes silicon nitride.
- 5. The microelectronic structure as claimed in claim 3, wherein one of claims 3 to 4, characterized in that the hydrogen barrier layer (22) lines the side walls of the contact holes (20).
- 6. The microelectronic structure as claimed in one of the preceding claims, characterized in that claim 1, wherein the metal-oxide-containing layer (14) takes the general form ABOx, where A stands for at least one metal selected from the group consisting of barium (Ea), strontium (Sr), bismuth (Ei), lead (Pb), zirconium (Zr), lanthanum (La), niobium (Nb), potassium (K) or calcium (Ca), E stands for titanium (Ti), tantalum (Ta), niobium (Nb) or ruthenium (Ru) and 0 stands for oxygen (0).
- 7. The microelectronic structure as claimed in claim 1, wherein one of the preceding claims, characterized in that the hydrogen-sensitive dielectric (14) serves as capacitor dielectric and is arranged between two metal-containing electrodes (8,16), one of the two electrodes (8, 16) being arranged between the hydrogen-sensitive dielectric (14) and the intermediate oxide (18).
- 8. The microelectronic structure as claimed in claim 7, characterized in that wherein the metal-containing electrodes (8, 16) consist of comprise platinum (Pt), ruthenium (Ru), rhenium (Re), rhodium (Rh), palladium (Pa),iridium (Ir), iridium oxide, ruthenium oxide, strontium ruthenium oxide or an alloy of these materials.
- 9. A method for fabricating a microelectronic structure which has a hydrogen-sensitive dielectric (14) covered by a hydrogen barrier layer (22,26), comprising the following steps:
applying a hydrogen-sensitive dielectric (24) is applied to a substrates, the hydrogen-sensitive dielectric (14) comprising a metal-oxide-containing layer which is a ferroelectric or a paraelectric; applying at least one intermediate oxide (18) is applied to the hydrogen-sensitive dielectric (14) in a thickness which is equal to at least five times the thickness of the hydrogen-sensitive dielectric (34); and covering the intermediate oxide (18) is covered with a hydrogen barrier layer (22, 26) comprising an electrically insulating material.
- 10. The method as claimed in claim 9, characterized in that wherein the intermediate oxide (18) is applied by means of spin-on glass or a TEOS method.
- 11. The method as claimed in claim 9, wherein or 10, characterized in that after the hydrogen barrier layer (22, 26) has been applied, contact holes (20) are etched into the intermediate oxide (18) and the side walls of the contact holes (20) are lined with an insulating layer (20,30).
- 12. The method as claimed in claim 11, characterized in that wherein the insulating layer (22, 28, 30) consists of the a same material as the hydrogen barrier layer (22,261), and the two together form the hydrogen barrier layer.
- 13. The method as claimed in one of claims 11 to 12, characterized in that claim 11, wherein the insulating layer 22 is produced from two partial layers (28, 30), the first partial layer (28) being applied to the intermediate oxide (18) or to the hydrogen barrier layer (26) prior to the etching of the contact holes (20), and the second partial layer (30) being applied conformally to the intermediate oxide (18) and the first partial layer (28) after the etching of the contact holes (201), the second partial layer (30) then being etched back anisotropically to form edge webs (30) which line the side walls of the contact holes (20).
- 14. The method as claimed in one of claims 11 to 13, characterized in that claim 11, wherein the insulating layer (22, 28, 30) consists of includes silicon nitride.
- 15. The method as claimed in one of claims 9 to 14, characterized in that claim 9, wherein the hydrogen-sensitive dielectric (14) is formed by a metal-oxide-containing layer of the general form ABOx, where A stands for at least one metal selected from the group consisting of barium (Ea), strontium (Sr), bismuth (Bi), lead (Pb), zirconium (Zr), lanthanum (La), niobium (Nb), potassium (K) or calcium (Ca), B stands for titanium (Ti), tantalum (Ta), niobium (Nb) or ruthenium (Ru) and 0 stands for oxygen (0).
- 16. The method as claimed in one of claims 9 to 15, characterized in that claim 9, wherein a metal-containing electrode (16) is applied to the hydrogen-sensitive dielectric (14) and is covered by the intermediate oxide (18).
- 17. The method as claimed in claim 16, characterized in that wherein the metal-containing electrode (16) consists of platinum (Pt), ruthenium (Ru), rhenium (Re), rhodium (Rh), palladium (Pa), iridium (Ir), iridium oxide, ruthenium oxide, strontium ruthenium oxide or an alloy of these materials.
Priority Claims (1)
Number |
Date |
Country |
Kind |
101 21 657.2 |
May 2001 |
DE |
|
CLAIM FOR PRIORITY
[0001] This application claims priority to International Application No. PCT/EP02/04422 which was published in the German language on Nov. 14, 2002, and filed in the German language on May 3, 2001, the contents of which are hereby incorporated by reference.
PCT Information
Filing Document |
Filing Date |
Country |
Kind |
PCT/EP02/04422 |
4/22/2002 |
WO |
|