Claims
- 1. A photoresist structure having at least two layers and overlaying a semiconductor substrate comprising:
- an antireflective first layer coated upon said substrate wherein the antireflective layer comprises a polysilane, and wherein the antireflective layer has an absolute optical density of at least 0.25 at the imaging wavelength of an overlaying photoresist layer, and wherein the antireflective layer is substantially inert to contact reactions with the photoresist layer, and wherein the antireflective layer is insoluble in the developer for the photoresist layer; and
- a second layer coated upon said antireflective first layer comprising a chemically amplified photoresist which is sensitive to ultraviolet radiation having a wavelength in the range from about 180 nm to about 350 nm.
- 2. The photoresist structure of claim 1 wherein the antireflective first layer has an absolute optical density of at least 0.25 over the range of wavelengths from about 235 nm to 280 nm.
- 3. The photoresist structure of claim 1 wherein the antireflective first layer is chemically non-reactive with the photoresist second layer.
- 4. The photoresist structure of claim 1 wherein the antireflective first layer is immiscible with the photoresist second layer.
- 5. The photoresist structure of claim 1 wherein the antireflective first layer is essentially insoluble in photoresist casting solvents selected from the group consisting of alcohols, esters, ethers, ketones.
- 6. The photoresist structure of claim 1 wherein the antireflective first layer comprises a polysilane selected from the group consisting of poly(cyclohexyl)(methyl)silane and copolymers thereof and poly(cyclotetramethylenesilane).
- 7. The photoresist structure of claim 6 wherein the antireflective first layer comprises poly(cyclohexylmethylsilane-co-diphenylsilane) where the ratio of cyclohexylmethylsilane units to diphenylsilane units is from about 2:1 to about 4:1.
Parent Case Info
This application is a continuation of U.S. Ser. No. 07/845,404 filed Mar. 03, 1992, and entitled "Mid and Deep-UV Antireflection Coatings and Methods For Use Thereof, " now abandoned.
US Referenced Citations (13)
Non-Patent Literature Citations (2)
Entry |
Zhang et al "Organosilane Polymers:--Diphenylsilylene--". Journal of Polymer Science, Polymer Letters Ed. vol. 23, No. 9. Sep. 1985. pp. 479-485. |
R. West, "The Polysilane High Polymers", J. Organometallic Chem., 300, 327 (1986). |
Continuations (1)
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Number |
Date |
Country |
Parent |
845404 |
Mar 1992 |
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