This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2012-197806, filed on Sep. 7, 2012; the entire contents of which are incorporated herein by reference.
Embodiments described herein relate generally to a mold and mold blank substrate.
As a pattern formation method, the imprint method has been drawing attention. The imprint method uses a master (mold) provided with the concave-convex shape of a pattern to be formed. In the imprint method, a photocurable organic material, for instance, is applied onto a substrate. The layer of this organic material is brought into contact with the mold and cured by light irradiation. Thus, a pattern in which the concave-convex shape of the mold is transferred is formed in the layer of the organic material.
In the pattern formation method using a mold, in view of improving the yield, it is important to control the film thickness of the organic material at the time of pressing with the mold.
In general, according to one embodiment, a mold includes a base material, a pedestal portion and a pattern portion. The base material includes a first surface and a second surface on opposite side from the first surface. The pedestal portion protruded from the first surface of the base material. The pedestal portion includes a side surface. The pattern portion is provided in the pedestal portion. The pattern portion includes an concave-convex pattern. The pedestal portion includes a first region and a second region. The first region is provided with the concave-convex pattern. The second region is provided between the first region and the side surface. The second region has maximum height equal to maximum height of the first region. The second region has a first height of the second region on the side surface side and a second height of the second region on the first region side. The first height is lower than the second height.
Various embodiments will be described hereinafter with reference to accompanying drawings. In the following description, like members are labeled with like reference numerals. The description of the members once described is omitted appropriately.
As shown in
The base material 10 includes a first surface 10a and a second surface 10b. The second surface 10b is a surface on the opposite side from the first surface 10a. In this embodiment, the direction connecting the first surface 10a and the second surface 10b is referred to as Z direction. The Z direction is also the thickness direction of the base material 10. The base material 10 is made of e.g. a light transmissive material. The material of the base material 10 is e.g. quartz.
In the mold 110 according to this embodiment, a recess portion 13 is provided in the base material 10. The recess 13 is a portion of the base material 10 set back in the Z direction from the second surface 10b. The recess portion 13 is provided in a central portion 12 of the base material 10. The base material 10 includes a peripheral portion 11 around the central portion 12. The peripheral portion 11 is provided like a frame so as to surround the outer periphery of the base material 10. The recess portion 13 is provided in the central portion 12 of the base material 10 in e.g. a circular shape as viewed in the Z direction.
The outline of the base material 10 as viewed in the Z direction is e,g. a rectangle. The size of the outline of the base material 10 as viewed in the Z direction is e.g. 150 millimeters (mm) long and 150 mm wide. The thickness of the peripheral portion 11 is e.g. 6.4 mm. The thickness of the central portion 12 is e.g. 1 mm.
The pedestal portion 20 is protruded from the first surface 10a of the base material 10. The pedestal portion 20 includes a side surface 20s. The side surface 20s is a surface extending in the Z direction. For instance, the pedestal portion 20 is provided integrally with the base material 10. The pedestal portion 20 may be provided separately from the base material 10. The outline of the pedestal portion 20 as viewed in the Z direction is e.g. a rectangle. The size of the outline of the pedestal portion 20 as viewed in the Z direction is e.g. 33 mm long and 26 mm wide. The height of the pedestal portion 20 is e.g. 3 micrometers (μm).
As shown in
The pattern portion P shown in
As shown in
The maximum height of the first region R1 is equal to the maximum height of the second region R2. Here, the height refers to the height in the Z direction with reference to the first surface 10a. The term “equal” includes being substantially equal
In the mold 110 according to this embodiment, the first height h1 of the second region R2 on the side surface 20s side is lower than the second height h2 of the second region R2 on the first region R1 side. Here, the heights h1 and h2 are heights in the Z direction with reference to the extended surface of the first surface 10a.
In the example shown in
In the example shown in
The difference between the second height h2 and the first height h1 is smaller than the step difference of the concave-convex pattern. For instance, in the example shown in
In the examples shown in
The shoulder part of the pedestal portion 20 is the outermost part to be brought into contact with a resist (photosensitive organic material) to which the mold 110 is pressed in the imprint method described later. The height of the second region R2 is gradually lowered from the first region R1 side toward the side surface 20s side.
In the example shown in
The difference h21 between the second height h2 and the first height h1 is e.g. 10 nm or more and 50 nm or less. The length of the part with the changing height of the second region R2 (the length L21 in the direction parallel to the first surface 10a) is e.g. 5 mm. In the examples shown in
The difference h21 between the second height h2 and the first height h1 is measured by e.g. a step gauge or AFM (atomic force microscope).
The mold 110 according to this embodiment includes the pedestal portion 20 as described above. Thus, when the mold 110 is pressed to a resist in the imprint method described later, running off of the resist to the outside of the side surface 20s of the pedestal portion 20 is suppressed. For instance, the shoulder part of the pedestal portion 20 is rounded. Thus, compared with the case where the shoulder part is not rounded, a space for receiving the resist is formed. This suppresses running off of the resist to the outside of the side surface 20s.
Here, an imprint method using the mold 110 is described.
First, as shown in
Next, as shown in
Next, with the pattern portion P of the mold 110 brought into contact with the resist 70, light C is applied from the base material 10 side of the mold 110. The light C is e.g. ultraviolet light. The light C is transmitted through the base material 10 and the pattern portion P and applied to the resist 70. The resist 70 is cured by irradiation with the light C.
Next, as shown in
Next, processing for removing this residual film 70b is performed. For instance, the transfer pattern 70a and the residual film 70b are etched back by RIE (reactive ion etching). Thus, as shown in
In the mold 190 according to the reference example shown in
At the time of application and release of pressure to the mold 190, the mold 190 may vibrate, and the pedestal portion 20 may warp in a downward concave shape. This warpage results in decreasing the distance between the outer edge portion of the pedestal portion 20 and the substrate 250. At this time, the resist 70 may run off to the outside of the outer edge portion of the pedestal portion 20. The resist 70 having run off to the outside climbs up the side surface 20s of the pedestal portion 20 by surface tension. If the resist 70 climbs up along the side surface 20s, its reaction causes the outer edge portion of the pedestal portion 20 to warp further downward. This results in further running off of the resist 70.
The warpage of the mold 190 affects the shape and orientation of the transfer pattern 70a. Furthermore, the warpage of the mold 190 affects the releasability of the mold 190. Deterioration of releasability imposes an excessive load on the transfer pattern 70a. Excessive load on the transfer pattern 70a causes damage to the transfer pattern 70a.
In the mold 110 according to this embodiment shown in
Because the resist 70 does not run off to the outside, the resist 70 does not climb up along the side surface 20s. The resist 70 climbs up along the curved surface 20c. However, the Z-direction component of the reaction is smaller than in the case where the resist 70 climbs up along the side surface 20s. Accordingly, the amount of warpage of the mold 110 is small.
Thus, use of the mold 110 according to this embodiment suppresses running off of the resist 70 and warpage of the mold 110 in the imprint method. Accordingly, a transfer pattern 70a is formed accurately in position and direction. When the mold 110 is released, no excessive load is imposed on the transfer pattern 70a. This suppresses damage to the transfer pattern 70a at the time of releasing the mold 110. Thus, the yield of pattern formation is improved.
In the example shown in
Preferably, the curved surface 20c is provided at least in the corner portion of the pedestal portion 20 as viewed in the Z direction. In the corner portion, the resist 70 spread is likely to run off. If the curved surface 20c is provided in the corner portion, running off of the resist 70 is effectively suppressed.
In the example shown in
The surface of the second region R2 of the pedestal portion 20 shown in
Preferably, the inclined surface 20p is provided at least in the corner portion of the pedestal portion 20 as viewed in the Z direction. In the corner portion, the resist 70 spread is likely to run off. If the inclined surface 20p is provided in the corner portion, running off of the resist 70 is effectively suppressed.
The first region R1 of the pedestal portion 20 shown in
The second region R2 includes a step difference between the flat surface FS1′ and the second flat surface FS2. In imprinting, the resist 70 spread enters into a space formed by the aforementioned step difference of the second region R2. This suppresses running off of the resist 70 to the outside of the side surface 20s of the pedestal portion 20.
In any mold 110 of
The shape of the pedestal portion 20 shown in
Next, a mold according to a second embodiment is described.
The molds 121, 122, and 123 shown in
The damping portion 40 shown in
In the mold 121, the thickness of the central portion 12 is thinner than the thickness of the peripheral portion 11. Thus, the central portion 12 is easy to warp. In the imprint method, a pressure is applied from the recess portion 13 to the central portion 12 to warp the central portion 12. Thus, the pedestal portion 20 is turned to a downward convex shape.
In this state, the center of the pattern portion P is brought into contact with a resist 70. Then, the pressure applied to the central portion 12 is gradually released. Thus, the contact region of the pattern portion P and the resist 70 is spread from the center toward the periphery. By such a method, mixing of air bubbles between the pattern portion P and the resist 70 is suppressed.
In this imprint method, application and release of pressure to the central portion 12 may cause vibration in the central portion 12. If the central portion 12 vibrates, the resist 70 is made likely to run off to the outside of the side surface 20s of the pedestal portion 20. In the mold 121, vibration of the central portion 12 is suppressed by the vibration damper 401. In the mold 121, because vibration of the central portion 12 is suppressed, running off of the resist 70 due to vibration is suppressed.
The damping portion 40 shown in
The pillar portion 403 is provided between the support portion 402 and the central portion 12. The pillar portion 403 may be provided in a plurality. The pillar portion 403 is a member shaped like a pillar from a damping material. In the mold 122, vibration of the central portion 12 is suppressed by the pillar portion 403. The pillar portion 403 achieves a damping effect with a simpler structure than the vibration damper 401.
The damping portion 40 shown in
In the mold 123, vibration of the central portion 12 is suppressed by the cover portion 404. In the mold 123, the damping portion 40 does not need the support portion 402. The mold 123 achieves a damping effect with a simple configuration of only the cover portion 404.
Next, a method for manufacturing a mold according to a third embodiment is described.
As shown in
In the step of preparing a blank substrate (step S101), a mold blank substrate 100 including a convex curved surface 20c′ in the pedestal portion 20 is prepared.
In the step of forming a pattern (step S102), a pattern is formed on the curved surface 20c′ of the pedestal portion 20 laid along a flat surface and matched with a reference position on the flat surface.
In the method for manufacturing the mold 110 according to this embodiment, a pattern portion P is formed in the pedestal portion 20 including a curved surface 20C. In this formation, the amount of displacement Δt of the transfer pattern 70a shown in
As shown in
Thus, in the case of performing pattern formation using the mold 110 in which a pattern portion P is provided in the pedestal portion 20 including a curved surface 20c′, a transfer pattern is formed at a position as designed.
Next, a method for manufacturing a mold according to a fourth embodiment is described.
As shown in
In the step of preparing a blank substrate (step S201), a mold blank substrate 100 including a convex curved surface 20c′ in the pedestal portion 20 is prepared.
In the step of forming a pattern (step S202), a pattern is formed on the curved surface 20c′ with the mold blank substrate 100 warped so that the curved surface 20c′ of the pedestal portion 20 is made flat.
The opening width of the mask material 80 as viewed in the direction normal to the first surface 10a is narrower than the opening width of the mask material 80 as viewed in the direction normal to the curved surface 20c′. In this state, RIE is performed in the direction perpendicular to the first surface 10a. Then, reactive ions impinge obliquely on the mask material 80. Accordingly, the opening width wP1 of the concave pattern P1 formed in the pedestal portion 20 is made narrower than the planned opening width (the opening width of the mask material 80).
Thus, as shown in
By performing pattern transfer using the mold 110 thus formed, a transfer pattern is formed at a position as designed.
As described above, the mold, the mold blank substrate, and the method for manufacturing a mold according to the embodiments can form a pattern with high yield.
The embodiments and the variations thereof have been described above. However, the invention is not limited to these examples. For instance, those skilled in the art can modify the above embodiments or the variations thereof by suitable addition, deletion, and design change of components, and by suitable combination of the features of the embodiments. Such modifications are also encompassed within the scope of the invention as long as they fall within the spirit of the invention.
While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. Indeed, the novel embodiments described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the invention.
Number | Date | Country | Kind |
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2012-197806 | Sep 2012 | JP | national |